FR2445621B1 - Procede de fabrication d'un dispositif par attaque par plasma, avec diminution de l'effet de charge - Google Patents

Procede de fabrication d'un dispositif par attaque par plasma, avec diminution de l'effet de charge

Info

Publication number
FR2445621B1
FR2445621B1 FR7919156A FR7919156A FR2445621B1 FR 2445621 B1 FR2445621 B1 FR 2445621B1 FR 7919156 A FR7919156 A FR 7919156A FR 7919156 A FR7919156 A FR 7919156A FR 2445621 B1 FR2445621 B1 FR 2445621B1
Authority
FR
France
Prior art keywords
reduction
manufacturing
load effect
plasma attack
attack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7919156A
Other languages
English (en)
French (fr)
Other versions
FR2445621A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2445621A1 publication Critical patent/FR2445621A1/fr
Application granted granted Critical
Publication of FR2445621B1 publication Critical patent/FR2445621B1/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/941—Loading effect mitigation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
FR7919156A 1978-07-31 1979-07-25 Procede de fabrication d'un dispositif par attaque par plasma, avec diminution de l'effet de charge Expired FR2445621B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/929,568 US4226665A (en) 1978-07-31 1978-07-31 Device fabrication by plasma etching

Publications (2)

Publication Number Publication Date
FR2445621A1 FR2445621A1 (fr) 1980-07-25
FR2445621B1 true FR2445621B1 (fr) 1986-10-03

Family

ID=25458066

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7919156A Expired FR2445621B1 (fr) 1978-07-31 1979-07-25 Procede de fabrication d'un dispositif par attaque par plasma, avec diminution de l'effet de charge

Country Status (14)

Country Link
US (1) US4226665A (enExample)
JP (1) JPS5521595A (enExample)
AU (1) AU524556B2 (enExample)
BE (1) BE877893A (enExample)
CA (1) CA1124207A (enExample)
DE (1) DE2930292A1 (enExample)
ES (1) ES482960A1 (enExample)
FR (1) FR2445621B1 (enExample)
GB (1) GB2026395B (enExample)
IE (1) IE48606B1 (enExample)
IL (1) IL57888A (enExample)
IT (1) IT1193492B (enExample)
NL (1) NL7905868A (enExample)
SE (1) SE442358B (enExample)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100422A (en) * 1980-01-17 1981-08-12 Toshiba Corp Plasma etching method
CA1148895A (en) * 1980-02-06 1983-06-28 Dan Maydan Reactive sputter etching of silicon
JPS56134738A (en) * 1980-03-26 1981-10-21 Toshiba Corp Method of forming pattern
US4310380A (en) * 1980-04-07 1982-01-12 Bell Telephone Laboratories, Incorporated Plasma etching of silicon
NL8004005A (nl) * 1980-07-11 1982-02-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US4344816A (en) * 1980-12-19 1982-08-17 Bell Telephone Laboratories, Incorporated Selectively etched bodies
EP0099558A3 (en) * 1982-07-22 1985-07-31 Texas Instruments Incorporated Fast plasma etch for aluminum
US4426246A (en) * 1982-07-26 1984-01-17 Bell Telephone Laboratories, Incorporated Plasma pretreatment with BCl3 to remove passivation formed by fluorine-etch
NL8204437A (nl) * 1982-11-16 1984-06-18 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met behulp van plasma-etsen.
US4414057A (en) * 1982-12-03 1983-11-08 Inmos Corporation Anisotropic silicide etching process
US4778562A (en) * 1984-08-13 1988-10-18 General Motors Corporation Reactive ion etching of tin oxide films using neutral reactant gas containing hydrogen
US4544444A (en) * 1984-08-15 1985-10-01 General Motors Corporation Reactive ion etching of tin oxide films using silicon tetrachloride reactant gas
GB2171360A (en) * 1985-02-19 1986-08-28 Oerlikon Buehrle Inc Etching aluminum/copper alloy films
EP0203560A1 (en) * 1985-05-31 1986-12-03 Tegal Corporation Plasma trench etch
DE3613181C2 (de) * 1986-04-18 1995-09-07 Siemens Ag Verfahren zum Erzeugen von Gräben mit einstellbarer Steilheit der Grabenwände in aus Silizium bestehenden Halbleitersubstraten
EP0246514A3 (en) * 1986-05-16 1989-09-20 Air Products And Chemicals, Inc. Deep trench etching of single crystal silicon
US4818488A (en) * 1987-02-25 1989-04-04 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US5171525A (en) * 1987-02-25 1992-12-15 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4931261A (en) * 1987-02-25 1990-06-05 Adir Jacob Apparatus for dry sterilization of medical devices and materials
US5200158A (en) * 1987-02-25 1993-04-06 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4943417A (en) * 1987-02-25 1990-07-24 Adir Jacob Apparatus for dry sterilization of medical devices and materials
US5087418A (en) * 1987-02-25 1992-02-11 Adir Jacob Process for dry sterilization of medical devices and materials
US4801427A (en) * 1987-02-25 1989-01-31 Adir Jacob Process and apparatus for dry sterilization of medical devices and materials
US4917586A (en) * 1987-02-25 1990-04-17 Adir Jacob Process for dry sterilization of medical devices and materials
US4976920A (en) * 1987-07-14 1990-12-11 Adir Jacob Process for dry sterilization of medical devices and materials
EP0295581A1 (en) * 1987-06-19 1988-12-21 Tegal Corporation Process for etching aluminum in a plasma
US4981551A (en) * 1987-11-03 1991-01-01 North Carolina State University Dry etching of silicon carbide
US4946547A (en) * 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
JP3092185B2 (ja) * 1990-07-30 2000-09-25 セイコーエプソン株式会社 半導体装置の製造方法
US5217567A (en) * 1992-02-27 1993-06-08 International Business Machines Corporation Selective etching process for boron nitride films
JP2734915B2 (ja) * 1992-11-18 1998-04-02 株式会社デンソー 半導体のドライエッチング方法
JP2884970B2 (ja) * 1992-11-18 1999-04-19 株式会社デンソー 半導体のドライエッチング方法
JP3370806B2 (ja) * 1994-11-25 2003-01-27 株式会社半導体エネルギー研究所 Ｍｉｓ型半導体装置の作製方法
US5711849A (en) * 1995-05-03 1998-01-27 Daniel L. Flamm Process optimization in gas phase dry etching
EP1019958B1 (de) 1997-09-24 2003-04-23 Infineon Technologies AG Verfahren zur ausbildung einer grabenstruktur in einem siliziumsubstrat
US6399507B1 (en) * 1999-09-22 2002-06-04 Applied Materials, Inc. Stable plasma process for etching of films
US20050029226A1 (en) * 2003-08-07 2005-02-10 Advanced Power Technology, Inc. Plasma etching using dibromomethane addition
US8649123B1 (en) 2008-11-26 2014-02-11 Western Digital (Fremont), Llc Method to eliminate reactive ion etching (RIE) loading effects for damascene perpendicular magnetic recording (PMR) fabrication
US8257597B1 (en) 2010-03-03 2012-09-04 Western Digital (Fremont), Llc Double rie damascene process for nose length control
JP5537324B2 (ja) * 2010-08-05 2014-07-02 株式会社東芝 半導体装置の製造方法
JP7304557B2 (ja) * 2019-07-16 2023-07-07 パナソニックＩｐマネジメント株式会社 プラズマエッチング方法および素子チップの製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1417085A (en) * 1973-05-17 1975-12-10 Standard Telephones Cables Ltd Plasma etching
US3994793A (en) * 1975-05-22 1976-11-30 International Business Machines Corporation Reactive ion etching of aluminum
US4069096A (en) * 1975-11-03 1978-01-17 Texas Instruments Incorporated Silicon etching process
GB1523267A (en) * 1976-04-15 1978-08-31 Hitachi Ltd Plasma etching apparatus
US4030967A (en) * 1976-08-16 1977-06-21 Northern Telecom Limited Gaseous plasma etching of aluminum and aluminum oxide
CA1059882A (en) * 1976-08-16 1979-08-07 Northern Telecom Limited Gaseous plasma etching of aluminum and aluminum oxide

Also Published As

Publication number Publication date
IT1193492B (it) 1988-07-08
ES482960A1 (es) 1980-03-01
IE791448L (en) 1980-01-31
AU4923779A (en) 1980-02-07
FR2445621A1 (fr) 1980-07-25
GB2026395A (en) 1980-02-06
IT7924775A0 (it) 1979-07-30
SE7906299L (sv) 1980-02-01
IL57888A0 (en) 1979-11-30
JPS5711954B2 (enExample) 1982-03-08
JPS5521595A (en) 1980-02-15
IE48606B1 (en) 1985-03-20
US4226665A (en) 1980-10-07
AU524556B2 (en) 1982-09-23
SE442358B (sv) 1985-12-16
NL7905868A (nl) 1980-02-04
BE877893A (fr) 1979-11-16
IL57888A (en) 1981-10-30
DE2930292A1 (de) 1980-02-28
CA1124207A (en) 1982-05-25
GB2026395B (en) 1982-07-14
DE2930292C2 (enExample) 1988-01-21

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