FR2441923B1 - - Google Patents

Info

Publication number
FR2441923B1
FR2441923B1 FR7928112A FR7928112A FR2441923B1 FR 2441923 B1 FR2441923 B1 FR 2441923B1 FR 7928112 A FR7928112 A FR 7928112A FR 7928112 A FR7928112 A FR 7928112A FR 2441923 B1 FR2441923 B1 FR 2441923B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7928112A
Other versions
FR2441923A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2441923A1 publication Critical patent/FR2441923A1/fr
Application granted granted Critical
Publication of FR2441923B1 publication Critical patent/FR2441923B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/945—Special, e.g. metal
FR7928112A 1978-11-14 1979-11-14 Systeme de cablage, son procede de fabrication et dispositif semi-conducteur muni d'un tel systeme Granted FR2441923A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NLAANVRAGE7811227,A NL181611C (nl) 1978-11-14 1978-11-14 Werkwijze ter vervaardiging van een bedradingssysteem, alsmede een halfgeleiderinrichting voorzien van een dergelijk bedradingssysteem.

Publications (2)

Publication Number Publication Date
FR2441923A1 FR2441923A1 (fr) 1980-06-13
FR2441923B1 true FR2441923B1 (fr) 1983-07-08

Family

ID=19831888

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7928112A Granted FR2441923A1 (fr) 1978-11-14 1979-11-14 Systeme de cablage, son procede de fabrication et dispositif semi-conducteur muni d'un tel systeme

Country Status (9)

Country Link
US (1) US4561173A (fr)
JP (1) JPS5847858B2 (fr)
AU (1) AU5266079A (fr)
CA (1) CA1150851A (fr)
DE (1) DE2945533C2 (fr)
FR (1) FR2441923A1 (fr)
GB (1) GB2036427B (fr)
IT (1) IT1125656B (fr)
NL (1) NL181611C (fr)

Families Citing this family (50)

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NL8002634A (nl) * 1980-05-08 1981-12-01 Philips Nv Programmeerbare halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
NL8002635A (nl) * 1980-05-08 1981-12-01 Philips Nv Programmeerbare halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
JPS57190331A (en) * 1981-05-20 1982-11-22 Toshiba Corp Semiconductor device and manufacture thereof
JPS6143448A (ja) * 1984-08-08 1986-03-03 Agency Of Ind Science & Technol 空間配線
JPS6260953U (fr) * 1985-10-04 1987-04-15
JPS62118249U (fr) * 1986-01-20 1987-07-27
JPH077757B2 (ja) * 1987-09-28 1995-01-30 三菱電機株式会社 クロム膜のパターニング方法
JPH01189939A (ja) * 1988-01-26 1989-07-31 Nec Corp 半導体集積回路
JPH02100341A (ja) * 1988-10-06 1990-04-12 Toshiba Corp 半導体装置のパターン形成方法
SE468575B (sv) * 1991-06-14 1993-02-08 Ericsson Telefon Ab L M Anordning med laminaera ledningsmoenster och valbara dielektrika
US5270574A (en) * 1991-08-01 1993-12-14 Texas Instruments Incorporated Vacuum micro-chamber for encapsulating a microelectronics device
US5199578A (en) * 1991-12-10 1993-04-06 The Stanley Works Clip strip for supporting multiple packages and display assembly using same
JP3318457B2 (ja) * 1994-12-26 2002-08-26 アルプス電気株式会社 カール矯正装置およびこれを備えたプリンタ
US6057224A (en) * 1996-03-29 2000-05-02 Vlsi Technology, Inc. Methods for making semiconductor devices having air dielectric interconnect structures
US6429120B1 (en) 2000-01-18 2002-08-06 Micron Technology, Inc. Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals
DE19713173C2 (de) * 1997-03-27 2001-02-15 Siemens Ag ROM-Speicher
US6251470B1 (en) * 1997-10-09 2001-06-26 Micron Technology, Inc. Methods of forming insulating materials, and methods of forming insulating materials around a conductive component
US6333556B1 (en) * 1997-10-09 2001-12-25 Micron Technology, Inc. Insulating materials
US6858526B2 (en) 1998-07-14 2005-02-22 Micron Technology, Inc. Methods of forming materials between conductive electrical components, and insulating materials
US5891797A (en) * 1997-10-20 1999-04-06 Micron Technology, Inc. Method of forming a support structure for air bridge wiring of an integrated circuit
US6509590B1 (en) 1998-07-20 2003-01-21 Micron Technology, Inc. Aluminum-beryllium alloys for air bridges
US6217783B1 (en) * 1998-12-01 2001-04-17 Visteon Global Technologies, Inc. Method for strengthening air bridge circuits
WO2000035000A1 (fr) * 1998-12-08 2000-06-15 Cvc Products, Inc. Structure de connexion de circuit integre a semi-conducteurs a vitesse ultra-elevee et procede de fabrication utilisant un dielectrique en espace libre
US6111204A (en) * 1999-02-08 2000-08-29 Ford Motor Company Bond pads for fine-pitch applications on air bridge circuit boards
KR100555479B1 (ko) * 1999-07-13 2006-03-03 삼성전자주식회사 미세 패턴 사이의 좁은 갭를 갖는 반도체 소자의 층간 절연막형성 방법
US6350679B1 (en) * 1999-08-03 2002-02-26 Micron Technology, Inc. Methods of providing an interlevel dielectric layer intermediate different elevation conductive metal layers in the fabrication of integrated circuitry
US6709968B1 (en) 2000-08-16 2004-03-23 Micron Technology, Inc. Microelectronic device with package with conductive elements and associated method of manufacture
US7335965B2 (en) 1999-08-25 2008-02-26 Micron Technology, Inc. Packaging of electronic chips with air-bridge structures
US7276788B1 (en) * 1999-08-25 2007-10-02 Micron Technology, Inc. Hydrophobic foamed insulators for high density circuits
US6670719B2 (en) 1999-08-25 2003-12-30 Micron Technology, Inc. Microelectronic device package filled with liquid or pressurized gas and associated method of manufacture
US7211512B1 (en) 2000-01-18 2007-05-01 Micron Technology, Inc. Selective electroless-plated copper metallization
US6420262B1 (en) 2000-01-18 2002-07-16 Micron Technology, Inc. Structures and methods to enhance copper metallization
US7262130B1 (en) 2000-01-18 2007-08-28 Micron Technology, Inc. Methods for making integrated-circuit wiring from copper, silver, gold, and other metals
US6413827B2 (en) 2000-02-14 2002-07-02 Paul A. Farrar Low dielectric constant shallow trench isolation
US6677209B2 (en) 2000-02-14 2004-01-13 Micron Technology, Inc. Low dielectric constant STI with SOI devices
US6890847B1 (en) 2000-02-22 2005-05-10 Micron Technology, Inc. Polynorbornene foam insulation for integrated circuits
US6674167B1 (en) 2000-05-31 2004-01-06 Micron Technology, Inc. Multilevel copper interconnect with double passivation
US6423629B1 (en) 2000-05-31 2002-07-23 Kie Y. Ahn Multilevel copper interconnects with low-k dielectrics and air gaps
US6449839B1 (en) * 2000-09-06 2002-09-17 Visteon Global Tech., Inc. Electrical circuit board and a method for making the same
US6433413B1 (en) 2001-08-17 2002-08-13 Micron Technology, Inc. Three-dimensional multichip module
US6747347B2 (en) 2001-08-30 2004-06-08 Micron Technology, Inc. Multi-chip electronic package and cooling system
US6686654B2 (en) * 2001-08-31 2004-02-03 Micron Technology, Inc. Multiple chip stack structure and cooling system
US20030183916A1 (en) * 2002-03-27 2003-10-02 John Heck Packaging microelectromechanical systems
US6620638B1 (en) 2002-06-05 2003-09-16 Micron Technology, Inc. Testing of multi-chip electronic modules
JP3793143B2 (ja) * 2002-11-28 2006-07-05 株式会社シマノ 自転車用電子制御装置
US20050137882A1 (en) * 2003-12-17 2005-06-23 Cameron Don T. Method for authenticating goods
US7300821B2 (en) * 2004-08-31 2007-11-27 Micron Technology, Inc. Integrated circuit cooling and insulating device and method
US7560375B2 (en) * 2004-09-30 2009-07-14 International Business Machines Corporation Gas dielectric structure forming methods
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
JP5491077B2 (ja) * 2009-06-08 2014-05-14 キヤノン株式会社 半導体装置、及び半導体装置の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3461524A (en) * 1966-11-02 1969-08-19 Bell Telephone Labor Inc Method for making closely spaced conductive layers
US3647585A (en) * 1969-05-23 1972-03-07 Bell Telephone Labor Inc Method of eliminating pinhole shorts in an air-isolated crossover
US3890177A (en) * 1971-08-27 1975-06-17 Bell Telephone Labor Inc Technique for the fabrication of air-isolated crossovers
JPS5146904B2 (fr) * 1971-09-30 1976-12-11
US3769108A (en) * 1971-12-03 1973-10-30 Bell Telephone Labor Inc Manufacture of beam-crossovers for integrated circuits
US3783056A (en) * 1972-06-20 1974-01-01 Bell Telephone Labor Inc Technique for the fabrication of an air isolated crossover
US3993515A (en) * 1975-03-31 1976-11-23 Rca Corporation Method of forming raised electrical contacts on a semiconductor device
NL7510103A (nl) * 1975-08-27 1977-03-01 Philips Nv Elektrostatisch bestuurde beeldweergeefinrichting.
NL7608901A (nl) * 1976-08-11 1978-02-14 Philips Nv Werkwijze ter vervaardiging van een halfge- leiderinrichting en halfgeleiderinrichting vervaardigd door middel van een dergelijke werkwijze.

Also Published As

Publication number Publication date
AU5266079A (en) 1980-05-22
FR2441923A1 (fr) 1980-06-13
CA1150851A (fr) 1983-07-26
DE2945533A1 (de) 1980-05-29
IT7927193A0 (it) 1979-11-09
JPS5847858B2 (ja) 1983-10-25
NL181611B (nl) 1987-04-16
IT1125656B (it) 1986-05-14
DE2945533C2 (de) 1983-11-03
JPS5568700A (en) 1980-05-23
GB2036427A (en) 1980-06-25
US4561173A (en) 1985-12-31
NL181611C (nl) 1987-09-16
NL7811227A (nl) 1980-05-19
GB2036427B (en) 1983-02-09

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Legal Events

Date Code Title Description
ST Notification of lapse