FR2439477A1 - Procede et dispositif de fabrication de semi-conducteurs par croissance epitaxiale en phase liquide - Google Patents

Procede et dispositif de fabrication de semi-conducteurs par croissance epitaxiale en phase liquide

Info

Publication number
FR2439477A1
FR2439477A1 FR7926089A FR7926089A FR2439477A1 FR 2439477 A1 FR2439477 A1 FR 2439477A1 FR 7926089 A FR7926089 A FR 7926089A FR 7926089 A FR7926089 A FR 7926089A FR 2439477 A1 FR2439477 A1 FR 2439477A1
Authority
FR
France
Prior art keywords
liquid phase
epitaxial growth
manufacturing semiconductors
walls
block
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7926089A
Other languages
English (en)
French (fr)
Other versions
FR2439477B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of FR2439477A1 publication Critical patent/FR2439477A1/fr
Application granted granted Critical
Publication of FR2439477B1 publication Critical patent/FR2439477B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/068—Substrate holders

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
FR7926089A 1978-10-20 1979-10-19 Procede et dispositif de fabrication de semi-conducteurs par croissance epitaxiale en phase liquide Granted FR2439477A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12961578A JPS5556625A (en) 1978-10-20 1978-10-20 Semiconductor crystal growing device

Publications (2)

Publication Number Publication Date
FR2439477A1 true FR2439477A1 (fr) 1980-05-16
FR2439477B1 FR2439477B1 (enExample) 1984-01-27

Family

ID=15013836

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7926089A Granted FR2439477A1 (fr) 1978-10-20 1979-10-19 Procede et dispositif de fabrication de semi-conducteurs par croissance epitaxiale en phase liquide

Country Status (6)

Country Link
US (1) US4338877A (enExample)
JP (1) JPS5556625A (enExample)
CA (1) CA1160762A (enExample)
DE (1) DE2942203A1 (enExample)
FR (1) FR2439477A1 (enExample)
GB (1) GB2035686B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0048872A1 (de) * 1980-09-29 1982-04-07 Siemens Aktiengesellschaft Vorrichtung zur Durchführung einer Flüssigphasen-Epitaxie

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4427464A (en) 1981-12-31 1984-01-24 Bell Telephone Laboratories, Incorporated Liquid phase epitaxy
JPS5968926A (ja) * 1982-10-12 1984-04-19 Mitsubishi Electric Corp 液相エピタキシヤル成長方法
SE443583B (sv) * 1982-11-12 1986-03-03 Ericsson Telefon Ab L M Anordning vid vetskefasepitaxi
US4620851A (en) * 1985-03-22 1986-11-04 Ryder International Corporation Method for tinting soft contact lenses
US4632055A (en) * 1985-03-22 1986-12-30 Ryder International Corp. Apparatus for tinting soft contact lenses
JP4261120B2 (ja) 2002-04-05 2009-04-30 株式会社日本吸収体技術研究所 バイパスチャネル部材を具備する吸収体およびそれを用いた吸収体製品

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE122153C (enExample) *
US3759759A (en) * 1970-01-29 1973-09-18 Fairchild Camera Instr Co Push pull method for solution epitaxial growth of iii v compounds
BE788374A (fr) * 1971-12-08 1973-01-02 Rca Corp Procede de depot d'une couche epitaxiale d'un materiau semi-conducteur sur la surface d'un substrat
SU460826A1 (ru) * 1972-10-16 1977-01-05 Ордена Ленина физико-технический институт им.А.Ф.Иоффе Устройство дл изготовлени многослойных полупроводниковых структур методом жидкостной эпитаксии
US3879235A (en) * 1973-06-11 1975-04-22 Massachusetts Inst Technology Method of growing from solution materials exhibiting a peltier effect at the solid-melt interface
JPS5248949B2 (enExample) * 1974-12-20 1977-12-13
DD122153A1 (enExample) 1975-10-08 1976-09-12
US4123302A (en) * 1978-02-21 1978-10-31 Rca Corporation Method for depositing epitaxial semiconductor from the liquid phase

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/72 *
EXBK/77 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0048872A1 (de) * 1980-09-29 1982-04-07 Siemens Aktiengesellschaft Vorrichtung zur Durchführung einer Flüssigphasen-Epitaxie
US4406245A (en) 1980-09-29 1983-09-27 Siemens Aktiengesellschaft Device for epitaxial depositing layers from a liquid phase

Also Published As

Publication number Publication date
CA1160762A (en) 1984-01-17
GB2035686B (en) 1983-01-19
JPS5556625A (en) 1980-04-25
FR2439477B1 (enExample) 1984-01-27
DE2942203A1 (de) 1980-04-30
DE2942203C2 (enExample) 1988-08-04
US4338877A (en) 1982-07-13
GB2035686A (en) 1980-06-18

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