FR2426745A1 - Procede de revetement metallique par depot sous forme de vapeurs, pour la formation de trajets conducteurs sur un corps semi-conducteur - Google Patents

Procede de revetement metallique par depot sous forme de vapeurs, pour la formation de trajets conducteurs sur un corps semi-conducteur

Info

Publication number
FR2426745A1
FR2426745A1 FR7913340A FR7913340A FR2426745A1 FR 2426745 A1 FR2426745 A1 FR 2426745A1 FR 7913340 A FR7913340 A FR 7913340A FR 7913340 A FR7913340 A FR 7913340A FR 2426745 A1 FR2426745 A1 FR 2426745A1
Authority
FR
France
Prior art keywords
vapors
formation
deposit
coating process
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7913340A
Other languages
English (en)
French (fr)
Other versions
FR2426745B1 (enExample
Inventor
Rudolf August Herbert Heinecke
Ronald Carl Stern
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2426745A1 publication Critical patent/FR2426745A1/fr
Application granted granted Critical
Publication of FR2426745B1 publication Critical patent/FR2426745B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C23C16/20—Deposition of aluminium only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
FR7913340A 1978-05-25 1979-05-25 Procede de revetement metallique par depot sous forme de vapeurs, pour la formation de trajets conducteurs sur un corps semi-conducteur Granted FR2426745A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB22632/78A GB1595659A (en) 1978-05-25 1978-05-25 Providing conductive tracks on semiconductor devices

Publications (2)

Publication Number Publication Date
FR2426745A1 true FR2426745A1 (fr) 1979-12-21
FR2426745B1 FR2426745B1 (enExample) 1983-08-26

Family

ID=10182578

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7913340A Granted FR2426745A1 (fr) 1978-05-25 1979-05-25 Procede de revetement metallique par depot sous forme de vapeurs, pour la formation de trajets conducteurs sur un corps semi-conducteur

Country Status (6)

Country Link
US (1) US4460618A (enExample)
JP (1) JPS54154291A (enExample)
ES (1) ES480925A1 (enExample)
FR (1) FR2426745A1 (enExample)
GB (1) GB1595659A (enExample)
IT (1) IT1192728B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5985857A (ja) * 1982-11-08 1984-05-17 Semiconductor Energy Lab Co Ltd アルミニユ−ム被膜の作製方法
US4585672A (en) * 1983-03-21 1986-04-29 Syracuse University Hydrogen charged thin film conductor
JPS61245523A (ja) * 1985-04-23 1986-10-31 Fujitsu Ltd アルミニウム膜の成長方法
WO1986006756A1 (en) * 1985-05-03 1986-11-20 American Telephone & Telegraph Company Method of making a device comprising a patterned aluminum layer
JPS61272379A (ja) * 1985-05-27 1986-12-02 Fujitsu Ltd アルミニウムのｃｖｄ方法
JPS6211227A (ja) * 1985-07-09 1987-01-20 Fujitsu Ltd 半導体装置の製造方法
JP2559703B2 (ja) * 1986-04-11 1996-12-04 富士通株式会社 配線膜のエピタキシヤル成長方法
US4839715A (en) * 1987-08-20 1989-06-13 International Business Machines Corporation Chip contacts without oxide discontinuities
US4913789A (en) * 1988-04-18 1990-04-03 Aung David K Sputter etching and coating process
JP2721023B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
JPH03114266A (ja) * 1990-09-13 1991-05-15 Semiconductor Energy Lab Co Ltd アルミニューム被膜
US5149596A (en) * 1990-10-05 1992-09-22 The United States Of America As Represented By The United States Department Of Energy Vapor deposition of thin films
JPH04221822A (ja) * 1990-12-21 1992-08-12 Kazuo Tsubouchi 堆積膜形成法
JP3048749B2 (ja) * 1992-04-28 2000-06-05 キヤノン株式会社 薄膜形成方法
US5995396A (en) * 1997-12-16 1999-11-30 Lucent Technologies Inc. Hybrid standby power system, method of operation thereof and telecommunications installation employing the same
US5985375A (en) * 1998-09-03 1999-11-16 Micron Technology, Inc. Method for pulsed-plasma enhanced vapor deposition
US8796851B2 (en) 2012-01-05 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. Bonding pad and method of making same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2921868A (en) * 1956-06-07 1960-01-19 Union Carbide Corp Aluminum gas plating of various substrates
US2990295A (en) * 1958-11-07 1961-06-27 Union Carbide Corp Deposition of aluminum
FR2156406A1 (en) * 1971-10-13 1973-05-25 Ibm Aluminium contact layer formation - on silicon semiconductors, withuout short circuiting the devices
DE2309506A1 (de) * 1973-02-26 1974-08-29 Siemens Ag Verfahren zur herstellung von anschluss- und kontaktflaechen durch metallabscheidung aus der gasphase

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2867546A (en) * 1956-02-08 1959-01-06 Ohio Commw Eng Co Gas plating of aluminum using aluminum trilsobutyl
DE1267054B (de) * 1958-09-10 1968-04-25 Union Carbide Corp Gasplattierungsverfahren zur Erzeugung von Aluminiumueberzuegen
US2929739A (en) * 1958-11-07 1960-03-22 Union Carbide Corp Aluminum plating
US3041197A (en) * 1959-06-01 1962-06-26 Berger Carl Coating surfaces with aluminum
DE1235106B (de) * 1960-02-29 1967-02-23 Union Carbide Corp Verfahren zur Gasplattierung von Aluminium auf erhitzte Gegenstaende
US3188230A (en) * 1961-03-16 1965-06-08 Alloyd Corp Vapor deposition process and device
US3158499A (en) * 1961-07-07 1964-11-24 Union Carbide Corp Method of depositing metal coatings in holes, tubes, cracks, fissures and the like
US3282243A (en) * 1965-09-08 1966-11-01 Ethyl Corp Movable means comprising vapor-plating nozzle and exhaust
US3402067A (en) * 1965-09-24 1968-09-17 Engelhard Ind Inc Method for depositing aluminum film
US3615956A (en) * 1969-03-27 1971-10-26 Signetics Corp Gas plasma vapor etching process
BE758258A (fr) * 1969-11-01 1971-04-01 Sumitomo Chemical Co Procede de depot d'aluminium
GB1352619A (en) * 1970-08-21 1974-05-08 Motorola Inc Thin film resistor
JPS4911540A (enExample) * 1972-05-31 1974-02-01
JPS4911541A (enExample) * 1972-06-01 1974-02-01
JPS5443872B2 (enExample) * 1972-09-18 1979-12-22
US3994793A (en) * 1975-05-22 1976-11-30 International Business Machines Corporation Reactive ion etching of aluminum
JPS5810988B2 (ja) * 1975-05-23 1983-02-28 株式会社日立製作所 キソウカガクハンノウホウシキ
US4031274A (en) * 1975-10-14 1977-06-21 General Electric Company Method for coating cavities with metal
LU74666A1 (enExample) * 1976-03-29 1977-10-10

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2921868A (en) * 1956-06-07 1960-01-19 Union Carbide Corp Aluminum gas plating of various substrates
US2990295A (en) * 1958-11-07 1961-06-27 Union Carbide Corp Deposition of aluminum
FR2156406A1 (en) * 1971-10-13 1973-05-25 Ibm Aluminium contact layer formation - on silicon semiconductors, withuout short circuiting the devices
DE2309506A1 (de) * 1973-02-26 1974-08-29 Siemens Ag Verfahren zur herstellung von anschluss- und kontaktflaechen durch metallabscheidung aus der gasphase

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/68 *

Also Published As

Publication number Publication date
ES480925A1 (es) 1980-01-01
GB1595659A (en) 1981-08-12
JPS54154291A (en) 1979-12-05
IT7922733A0 (it) 1979-05-17
FR2426745B1 (enExample) 1983-08-26
US4460618A (en) 1984-07-17
IT1192728B (it) 1988-05-04
JPH0234166B2 (enExample) 1990-08-01

Similar Documents

Publication Publication Date Title
FR2426745A1 (fr) Procede de revetement metallique par depot sous forme de vapeurs, pour la formation de trajets conducteurs sur un corps semi-conducteur
US2847320A (en) Method for gas plating with aluminum organo compounds
FR2399487A1 (fr) Procede de realisation de revetement metallique resistant a la corrosion a temperature elevee
FR2379619A1 (fr) Procede et appareil pour le revetement des parois d'une cavite, par placage electrolytique et revetement de surface obtenu par ledit procede
FR2387080A1 (fr) Procede de production de monocristal de silicium avec un element de chauffage a arc
FR2433588A1 (fr) Procede pour reduire la formation d'oxyde de metal sur une feuille metallique revetue a chaud dudit metal, et four pour la mise en oeuvre du procede
US2604395A (en) Method of producing metallic bodies
BR9905920A (pt) Revestimento aperfeiçoado e processo para minimizar o consumo de material de base durante serviço em alta temperatura
FR2441271A1 (fr) Procede de metallisation de dispositifs semi-conducteurs
US2880115A (en) Method of gas plating light metals
FR2386359A1 (fr) Procede de depot par immersion en continu, dispositif et produits obtenus
EP0349044A3 (en) Process for the production of a protective film on a magnesium-based substrate, application to the protection of magnesium alloys, substrates thus obtained
US2876137A (en) Method of plating metal with magnesium
FR2426743A1 (fr) Procede et dispositif de revetement metallique par depot sous forme de vapeurs
US3282243A (en) Movable means comprising vapor-plating nozzle and exhaust
JPS57155365A (en) Method of forming silicon carbide film excellent in adhesion on metal substrate surface
US3402067A (en) Method for depositing aluminum film
Rajam et al. Electroless Nickel Deposition From Triethanolamine Baths. II. Deposit Characteristics
JPS6149390B2 (enExample)
SU443119A1 (ru) Способ осаждени металлов и сплавов
KR920006042B1 (ko) 철, 구리제품의 알루미늄 코오팅방법
JPS5544579A (en) Continuous vacuum evaporation apparatus
JPS5573866A (en) Continuous vacuum deposition apparatus
SE8602616L (sv) Sett for anbringande av harda beleggningar och liknande pa metaller, samt den erhallna produkten
KR840001260B1 (ko) 용융 금속 도금방법

Legal Events

Date Code Title Description
ST Notification of lapse