FR2426093A2 - Perfectionnements aux procedes et dispositifs de fabrication de couches minces semi-conductrices dopees et aux produits obtenus - Google Patents

Perfectionnements aux procedes et dispositifs de fabrication de couches minces semi-conductrices dopees et aux produits obtenus

Info

Publication number
FR2426093A2
FR2426093A2 FR7814861A FR7814861A FR2426093A2 FR 2426093 A2 FR2426093 A2 FR 2426093A2 FR 7814861 A FR7814861 A FR 7814861A FR 7814861 A FR7814861 A FR 7814861A FR 2426093 A2 FR2426093 A2 FR 2426093A2
Authority
FR
France
Prior art keywords
target
dopant
main
sputtering
oscillation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7814861A
Other languages
English (en)
Other versions
FR2426093B2 (fr
Inventor
Gerard Cohen-Solal
Alain Zozime
Claude Sella
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bpifrance Financement SA
Original Assignee
Agence National de Valorisation de la Recherche ANVAR
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from FR7410601A external-priority patent/FR2265872B1/fr
Application filed by Agence National de Valorisation de la Recherche ANVAR filed Critical Agence National de Valorisation de la Recherche ANVAR
Priority to FR7814861A priority Critical patent/FR2426093A2/fr
Publication of FR2426093A2 publication Critical patent/FR2426093A2/fr
Application granted granted Critical
Publication of FR2426093B2 publication Critical patent/FR2426093B2/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Abstract

Il s'agit de fabriquer des jonctions p-n ou n-p de grandes surfaces par co-pulvérisation cathodique en présence de plasma à partir d'une cible principale 10 de semi-conducteur et d'une cible auxiliaire métallique propre à constituer une source d'impuretés. La cible auxiliaire se présente sous la forme de trois barreaux parallèles 42 d'une même échelle disposés entre la cible principale 10 et le substrat et animés d'un mouvement de va-et-vient parallèle à la cible principale. Cette dernière est obtenue par frittage de poudres et le plasma ionique est introduit dans l'enceinte à partir d'une pluralité d'orifices perforés dans la paroi d'un distributeur traversant une région chaude de l'enceinte de pulvérisation. Applications préférées : constitution de détecteurs infrarouges à partir de couches de Cd x Hg1-x Te dopées successivement par de l'or et par de l'aluminium.
FR7814861A 1974-03-27 1978-05-19 Perfectionnements aux procedes et dispositifs de fabrication de couches minces semi-conductrices dopees et aux produits obtenus Granted FR2426093A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7814861A FR2426093A2 (fr) 1974-03-27 1978-05-19 Perfectionnements aux procedes et dispositifs de fabrication de couches minces semi-conductrices dopees et aux produits obtenus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7410601A FR2265872B1 (fr) 1974-03-27 1974-03-27
FR7814861A FR2426093A2 (fr) 1974-03-27 1978-05-19 Perfectionnements aux procedes et dispositifs de fabrication de couches minces semi-conductrices dopees et aux produits obtenus

Publications (2)

Publication Number Publication Date
FR2426093A2 true FR2426093A2 (fr) 1979-12-14
FR2426093B2 FR2426093B2 (fr) 1980-10-31

Family

ID=33161167

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7814861A Granted FR2426093A2 (fr) 1974-03-27 1978-05-19 Perfectionnements aux procedes et dispositifs de fabrication de couches minces semi-conductrices dopees et aux produits obtenus

Country Status (1)

Country Link
FR (1) FR2426093A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0105409A2 (fr) * 1982-09-30 1984-04-18 GTE Products Corporation Dépôt de film mince par pulvérisation
US9194036B2 (en) * 2007-09-06 2015-11-24 Infineon Technologies Ag Plasma vapor deposition

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2008121A1 (en) * 1968-05-09 1970-01-16 Monsanto Co Thin film resistances
FR1595037A (fr) * 1968-02-12 1970-06-08
FR2108057A1 (fr) * 1970-09-29 1972-05-12 Matsushita Electric Ind Co Ltd

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1595037A (fr) * 1968-02-12 1970-06-08
FR2008121A1 (en) * 1968-05-09 1970-01-16 Monsanto Co Thin film resistances
FR2108057A1 (fr) * 1970-09-29 1972-05-12 Matsushita Electric Ind Co Ltd

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0105409A2 (fr) * 1982-09-30 1984-04-18 GTE Products Corporation Dépôt de film mince par pulvérisation
EP0105409A3 (en) * 1982-09-30 1984-10-03 Gte Products Corporation Thin film deposition by sputtering
US9194036B2 (en) * 2007-09-06 2015-11-24 Infineon Technologies Ag Plasma vapor deposition

Also Published As

Publication number Publication date
FR2426093B2 (fr) 1980-10-31

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