GB1056678A - Improvements relating to cryosars - Google Patents

Improvements relating to cryosars

Info

Publication number
GB1056678A
GB1056678A GB3156264A GB3156264A GB1056678A GB 1056678 A GB1056678 A GB 1056678A GB 3156264 A GB3156264 A GB 3156264A GB 3156264 A GB3156264 A GB 3156264A GB 1056678 A GB1056678 A GB 1056678A
Authority
GB
United Kingdom
Prior art keywords
deposited
substrate
heated
germanium
cryosar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3156264A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB1056678A publication Critical patent/GB1056678A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/44—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using super-conductive elements, e.g. cryotron
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

<PICT:1056678/C6-C7/1> <PICT:1056678/C6-C7/2> A thin film cryosar is produced by providing a highly compensated semi-conductor layer by evaporation on a substrate and ohmically connected to two deposited electrodes. Fig. 4 shows an apparatus suitable for the deposition process. Metallic electrode strips 10 thick are first deposited on glass substrate 15 by means of a mask 16 through which gold is deposited from source 10 in heater 8. Highly doped N-type germanium powder from source 11 is then carried by moving belt 13 to heated graphite strip 9 from which it instantly evaporates and deposits a 100 m thick film on substrate 15 through another mask 16 so that a plurality of circular deposition are formed. It is found that the deposited material has P-type with high (0.8) compensation. Alternatively both N and P type impurities and germanium may all be vapourized and deposited together simultaneously. The second series of electrode strips, at right angles to the first, are then deposited to form a matrix of cryosar devices each comprising a germanium element 3 between strip electrodes 2 as shown in Fig. 3. In an alternative embodiment silicon containing 3.1015 atoms per cc. of boron and compensated 90% with antimony is used as the semi-conductor and this is heated by an electron beam. The electrode material may consist of silver or nickel in place of gold, and the substrate of ceramic or mica in place of glass. The layer may be polycrystalline or a single crystal. The substrate may be heated to 100 to 600 DEG C.
GB3156264A 1963-08-01 1964-08-04 Improvements relating to cryosars Expired GB1056678A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4020863 1963-08-01

Publications (1)

Publication Number Publication Date
GB1056678A true GB1056678A (en) 1967-01-25

Family

ID=12574347

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3156264A Expired GB1056678A (en) 1963-08-01 1964-08-04 Improvements relating to cryosars

Country Status (1)

Country Link
GB (1) GB1056678A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2383241A1 (en) * 1977-03-09 1978-10-06 Hitachi Ltd MULTI-LAYER DEPOSIT PROCESS BY VACUUM EVAPORATION

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2383241A1 (en) * 1977-03-09 1978-10-06 Hitachi Ltd MULTI-LAYER DEPOSIT PROCESS BY VACUUM EVAPORATION

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