FR2424631A1 - Thyristor with differently doped base layers - has specified mean impurities concentration in higher doped base layer and matrix of shunt channels of specified width - Google Patents

Thyristor with differently doped base layers - has specified mean impurities concentration in higher doped base layer and matrix of shunt channels of specified width

Info

Publication number
FR2424631A1
FR2424631A1 FR7812368A FR7812368A FR2424631A1 FR 2424631 A1 FR2424631 A1 FR 2424631A1 FR 7812368 A FR7812368 A FR 7812368A FR 7812368 A FR7812368 A FR 7812368A FR 2424631 A1 FR2424631 A1 FR 2424631A1
Authority
FR
France
Prior art keywords
base layer
doped base
specified
channels
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7812368A
Other languages
French (fr)
Other versions
FR2424631B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FIZ TEKHN I
Original Assignee
FIZ TEKHN I
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FIZ TEKHN I filed Critical FIZ TEKHN I
Priority to FR7812368A priority Critical patent/FR2424631A1/en
Publication of FR2424631A1 publication Critical patent/FR2424631A1/en
Application granted granted Critical
Publication of FR2424631B1 publication Critical patent/FR2424631B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

One of the thyristors base layer is of p-conductivity and highly doped, while the other base layer is of n-conductivity and lowly doped. The layers are arranged between n- and p-conductivity emitter layers. From the p-conductivity base layer to the current terminal contact extend shunting channels (10) for shunting the emitter junction. The mean concentration of impurities in the highly doped base layer (2) has a max. value of 1 x 1016 cm-3. The shunting channels form a network in which the width of each channel does not exceed the diffusion length of the carrier in the highly doped base layer. Pref. the channels are arranged in the highly doped base layer in a depth corresponding to the impurity concentration of max. 1 x 1015 cm-3, and the spacing of the channels is specified.
FR7812368A 1978-04-26 1978-04-26 Thyristor with differently doped base layers - has specified mean impurities concentration in higher doped base layer and matrix of shunt channels of specified width Granted FR2424631A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7812368A FR2424631A1 (en) 1978-04-26 1978-04-26 Thyristor with differently doped base layers - has specified mean impurities concentration in higher doped base layer and matrix of shunt channels of specified width

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7812368A FR2424631A1 (en) 1978-04-26 1978-04-26 Thyristor with differently doped base layers - has specified mean impurities concentration in higher doped base layer and matrix of shunt channels of specified width

Publications (2)

Publication Number Publication Date
FR2424631A1 true FR2424631A1 (en) 1979-11-23
FR2424631B1 FR2424631B1 (en) 1980-11-07

Family

ID=9207612

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7812368A Granted FR2424631A1 (en) 1978-04-26 1978-04-26 Thyristor with differently doped base layers - has specified mean impurities concentration in higher doped base layer and matrix of shunt channels of specified width

Country Status (1)

Country Link
FR (1) FR2424631A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0130669A1 (en) * 1983-04-30 1985-01-09 Kabushiki Kaisha Toshiba Gate turn off thyristor with mesh cathode structure
EP0186140A1 (en) * 1984-12-27 1986-07-02 Siemens Aktiengesellschaft Semiconductor power switch

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1406185A (en) * 1963-08-07 1965-07-16 Philips Nv Controlled rectifier and its manufacturing process
CH444975A (en) * 1966-09-27 1967-10-15 Bbc Brown Boveri & Cie Process for producing a semiconductor element with a pnpn structure with short circuits in the emitter zone
US3918082A (en) * 1973-11-07 1975-11-04 Jearld L Hutson Semiconductor switching device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1406185A (en) * 1963-08-07 1965-07-16 Philips Nv Controlled rectifier and its manufacturing process
CH444975A (en) * 1966-09-27 1967-10-15 Bbc Brown Boveri & Cie Process for producing a semiconductor element with a pnpn structure with short circuits in the emitter zone
US3918082A (en) * 1973-11-07 1975-11-04 Jearld L Hutson Semiconductor switching device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0130669A1 (en) * 1983-04-30 1985-01-09 Kabushiki Kaisha Toshiba Gate turn off thyristor with mesh cathode structure
EP0186140A1 (en) * 1984-12-27 1986-07-02 Siemens Aktiengesellschaft Semiconductor power switch
US4792839A (en) * 1984-12-27 1988-12-20 Siemens Aktiengesellschaft Semiconductor power circuit breaker structure obviating secondary breakdown

Also Published As

Publication number Publication date
FR2424631B1 (en) 1980-11-07

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