FR2409500A1 - Transducteur a semiconducteur en boitier - Google Patents

Transducteur a semiconducteur en boitier

Info

Publication number
FR2409500A1
FR2409500A1 FR7832512A FR7832512A FR2409500A1 FR 2409500 A1 FR2409500 A1 FR 2409500A1 FR 7832512 A FR7832512 A FR 7832512A FR 7832512 A FR7832512 A FR 7832512A FR 2409500 A1 FR2409500 A1 FR 2409500A1
Authority
FR
France
Prior art keywords
transducer
pad
semiconductor
boxed
semiconductor transducer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7832512A
Other languages
English (en)
Other versions
FR2409500B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2409500A1 publication Critical patent/FR2409500A1/fr
Application granted granted Critical
Publication of FR2409500B1 publication Critical patent/FR2409500B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0061—Electrical connection means
    • G01L19/0084—Electrical connection means to the outside of the housing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/147—Details about the mounting of the sensor to support or covering means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)

Abstract

UN TRANSDUCTEUR A SEMICONDUCTEUR EST UNI PAR SOUDAGE INVERSE SANS FIL A UNE PASTILLE D'INTERFACE SEMICONDUCTRICE QUI EST MONTE SUR LE BOITIER EN CERAMIQUE. UN COUPLAGE THERMIQUE ENTRE LE BOITIER ET LA PASTILLE DE TRANSDUCTEUR EST REDUIT AU MINIMUM PAR L'AIRE DE CONTACT PEU ETENDUE ENTRE LA PASTILLE DE TRANSDUCTEUR ET LA PASTILLE D'INTERFACE. UN ESPACEMENT DE LA DIMENSION DU MICRON ENTRE LA MEMBRANE FORMANT RESSORT DANS LA PASTILLE DE TRANSDUCTEUR ET LA PASTILLE D'INTERFACE PRODUIT UN AMORTISSEMENT PAR COMPRESSION DE FILM DE LA MEMBRANE FORMANT RESSORT. APPLICATION: TRANSDUCTEUR DE FORCE, A SEMICONDUCTEUR.
FR7832512A 1977-11-18 1978-11-17 Transducteur a semiconducteur en boitier Granted FR2409500A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/852,909 US4129042A (en) 1977-11-18 1977-11-18 Semiconductor transducer packaged assembly

Publications (2)

Publication Number Publication Date
FR2409500A1 true FR2409500A1 (fr) 1979-06-15
FR2409500B1 FR2409500B1 (fr) 1984-12-28

Family

ID=25314546

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7832512A Granted FR2409500A1 (fr) 1977-11-18 1978-11-17 Transducteur a semiconducteur en boitier

Country Status (6)

Country Link
US (1) US4129042A (fr)
JP (1) JPS5478991A (fr)
DE (1) DE2849738A1 (fr)
FR (1) FR2409500A1 (fr)
GB (1) GB2008319B (fr)
IT (1) IT1101152B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2461939A1 (fr) * 1979-07-17 1981-02-06 Data Instr Inc Transducteur de pression et procede de fabrication d'un tel transducteur

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JPS5595373A (en) * 1979-01-11 1980-07-19 Nissan Motor Co Ltd Semiconductor pressure sensor
JPS5817421B2 (ja) * 1979-02-02 1983-04-07 日産自動車株式会社 半導体圧力センサ
JPS55112864U (fr) * 1979-02-02 1980-08-08
JPS55103438A (en) * 1979-02-05 1980-08-07 Hitachi Ltd Pressure converter
US4322980A (en) * 1979-11-08 1982-04-06 Hitachi, Ltd. Semiconductor pressure sensor having plural pressure sensitive diaphragms and method
US4342227A (en) * 1980-12-24 1982-08-03 International Business Machines Corporation Planar semiconductor three direction acceleration detecting device and method of fabrication
US4498342A (en) * 1983-04-18 1985-02-12 Honeywell Inc. Integrated silicon accelerometer with stress-free rebalancing
JPH0650270B2 (ja) * 1984-05-21 1994-06-29 株式会社日本自動車部品総合研究所 高圧用圧力検出器
DE3432293A1 (de) * 1984-09-01 1986-03-13 Schaudt Maschinenbau Gmbh, 7000 Stuttgart Spannvorrichtung fuer eine werkzeugmaschine
ATE42637T1 (de) * 1985-09-11 1989-05-15 Kunz Manfred Drucksensor.
NL8502543A (nl) * 1985-09-17 1987-04-16 Sentron V O F Langwerpig drukgevoelig element, vervaardigd uit halfgeleidermateriaal.
US4691568A (en) * 1985-12-09 1987-09-08 Motorola, Inc. Semi-conductor accelerometer
EP0276979A3 (fr) * 1987-01-30 1989-12-06 University College Cardiff Consultants Ltd. Microsenseur
US4780699A (en) * 1987-02-06 1988-10-25 Solartron Electronics, Inc. Input/output terminal assembly for flexure-type pressure transducers
WO1988008522A1 (fr) * 1987-04-24 1988-11-03 Kabushiki Kaisha Nexy Kenkyusho Detecteur de forces, d'acceleration et de magnetisme, utilisant des resistances
EP0333872B1 (fr) * 1987-09-18 1995-08-23 Wacoh Corporation Pince du robot
US4987780A (en) * 1987-11-16 1991-01-29 Litton Systems, Inc. Integrated accelerometer assembly
US4823230A (en) * 1988-03-04 1989-04-18 General Electric Company Pressure transducer
DE3814950A1 (de) * 1988-05-03 1989-11-16 Bosch Gmbh Robert Beschleunigungsaufnehmer
IT1223710B (it) * 1988-07-21 1990-09-29 Marelli Autronica Trasduttore di altissima pressione in particolare per il rilevamento della pressione di un fluido idraulico
US5191798A (en) * 1988-09-30 1993-03-09 Kabushiki Kaisha Komatsu Seisakusho Pressure sensor
US5049421A (en) * 1989-01-30 1991-09-17 Dresser Industries, Inc. Transducer glass bonding technique
US4922754A (en) * 1989-03-17 1990-05-08 Kennametal Inc. Acoustic emission transducer and mounting adapter for monitoring metalcutting tools
KR930008304B1 (ko) * 1990-04-27 1993-08-27 미쯔비시 덴끼 가부시끼가이샤 진동 검출기
US5164328A (en) * 1990-06-25 1992-11-17 Motorola, Inc. Method of bump bonding and sealing an accelerometer chip onto an integrated circuit chip
DE4137624A1 (de) * 1991-11-15 1993-05-19 Bosch Gmbh Robert Silizium-chip zur verwendung in einem kraftsensor
JP2831195B2 (ja) * 1992-03-25 1998-12-02 富士電機株式会社 半導体加速度センサ
US5665915A (en) * 1992-03-25 1997-09-09 Fuji Electric Co., Ltd. Semiconductor capacitive acceleration sensor
US5346857A (en) * 1992-09-28 1994-09-13 Motorola, Inc. Method for forming a flip-chip bond from a gold-tin eutectic
JPH0875580A (ja) * 1994-09-06 1996-03-22 Mitsubishi Electric Corp 半導体圧力センサ
JPH10104101A (ja) * 1996-10-02 1998-04-24 Mitsubishi Electric Corp 半導体圧力センサ
DE19758463C2 (de) * 1997-04-22 2000-12-07 Fraunhofer Ges Forschung Dosiervorrichtung
JP3644205B2 (ja) 1997-08-08 2005-04-27 株式会社デンソー 半導体装置及びその製造方法
DE19743409A1 (de) * 1997-10-01 1999-04-08 Bosch Gmbh Robert Meßvorrichtung zur Messung der Masse eines strömenden Mediums
AU9766498A (en) * 1997-10-23 1999-05-10 Texas Instruments Incorporated Device for performing measurements in a space by means of a chip
US6050147A (en) * 1997-12-05 2000-04-18 Delco Electronics Corp. Pressure sensor assembly
US6203523B1 (en) 1998-02-02 2001-03-20 Medtronic Inc Implantable drug infusion device having a flow regulator
JPH11351990A (ja) 1998-04-09 1999-12-24 Fujikoki Corp 圧力センサ
US6081037A (en) * 1998-06-22 2000-06-27 Motorola, Inc. Semiconductor component having a semiconductor chip mounted to a chip mount
US20020003274A1 (en) * 1998-08-27 2002-01-10 Janusz Bryzek Piezoresistive sensor with epi-pocket isolation
US6006607A (en) * 1998-08-31 1999-12-28 Maxim Integrated Products, Inc. Piezoresistive pressure sensor with sculpted diaphragm
US6351996B1 (en) 1998-11-12 2002-03-05 Maxim Integrated Products, Inc. Hermetic packaging for semiconductor pressure sensors
US6346742B1 (en) 1998-11-12 2002-02-12 Maxim Integrated Products, Inc. Chip-scale packaged pressure sensor
US6229190B1 (en) 1998-12-18 2001-05-08 Maxim Integrated Products, Inc. Compensated semiconductor pressure sensor
US6255728B1 (en) 1999-01-15 2001-07-03 Maxim Integrated Products, Inc. Rigid encapsulation package for semiconductor devices
EP1055921A3 (fr) * 1999-05-26 2002-05-08 Infineon Technologies AG Montage d'un composant micromécanique dans un boítier
US6522762B1 (en) * 1999-09-07 2003-02-18 Microtronic A/S Silicon-based sensor system
JP2001133345A (ja) * 1999-11-02 2001-05-18 Fuji Koki Corp 圧力センサ
US6931928B2 (en) * 2001-09-04 2005-08-23 Tokyo Electron Limited Microstructure with movable mass
US6997059B2 (en) * 2003-10-07 2006-02-14 Cts Corporation Pressure sensor
US7000298B2 (en) * 2004-04-20 2006-02-21 Honeywell International Inc. Method a quartz sensor
US7406870B2 (en) * 2005-01-06 2008-08-05 Ricoh Company, Ltd. Semiconductor sensor
JP4642634B2 (ja) * 2005-10-31 2011-03-02 パナソニック株式会社 音響センサの製造方法
US7845229B2 (en) * 2006-08-11 2010-12-07 Rohm Co., Ltd. Acceleration sensor
EP2015046A1 (fr) * 2007-06-06 2009-01-14 Infineon Technologies SensoNor AS Capteur de vide
US7930944B2 (en) * 2008-05-14 2011-04-26 Honeywell International Inc. ASIC compensated pressure sensor with soldered sense die attach
DE112011102030T5 (de) * 2010-06-15 2013-04-04 Murata Manufacturing Co., Ltd. Dynamiksensor
US9227835B2 (en) 2010-11-23 2016-01-05 Honeywell International Inc. Vibration isolation interposer die
US8371176B2 (en) 2011-01-06 2013-02-12 Honeywell International Inc. Media isolated pressure sensor
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US9500808B2 (en) 2012-05-09 2016-11-22 The Boeing Company Ruggedized photonic crystal sensor packaging
RU167463U1 (ru) * 2016-08-10 2017-01-10 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" Радиационно стойкий высокотемпературный тензочувствительный элемент преобразователя давления
RU167464U1 (ru) * 2016-08-11 2017-01-10 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" Интегральный чувствительный элемент преобразователя давления с датчиком температуры

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1248087A (en) * 1969-02-28 1971-09-29 Ferranti Ltd Improvements relating to pressure gauges
FR2282720A1 (fr) * 1974-08-19 1976-03-19 Ibm Assemblage de supports et de dispositifs semi-conducteurs
FR2293704A1 (fr) * 1974-12-02 1976-07-02 Philips Nv Indicateur de pression
US4050049A (en) * 1976-02-09 1977-09-20 Signetics Corporation Solid state force transducer, support and method of making same
DE2617731A1 (de) * 1976-04-23 1977-10-27 Siemens Ag Druckmesswandler

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US3858150A (en) * 1973-06-21 1974-12-31 Motorola Inc Polycrystalline silicon pressure sensor
US4071838A (en) * 1976-02-09 1978-01-31 Diax Corporation Solid state force transducer and method of making same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1248087A (en) * 1969-02-28 1971-09-29 Ferranti Ltd Improvements relating to pressure gauges
FR2282720A1 (fr) * 1974-08-19 1976-03-19 Ibm Assemblage de supports et de dispositifs semi-conducteurs
FR2293704A1 (fr) * 1974-12-02 1976-07-02 Philips Nv Indicateur de pression
US4050049A (en) * 1976-02-09 1977-09-20 Signetics Corporation Solid state force transducer, support and method of making same
DE2617731A1 (de) * 1976-04-23 1977-10-27 Siemens Ag Druckmesswandler

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2461939A1 (fr) * 1979-07-17 1981-02-06 Data Instr Inc Transducteur de pression et procede de fabrication d'un tel transducteur

Also Published As

Publication number Publication date
IT1101152B (it) 1985-09-28
US4129042A (en) 1978-12-12
GB2008319A (en) 1979-05-31
DE2849738C2 (fr) 1987-02-26
GB2008319B (en) 1982-02-24
FR2409500B1 (fr) 1984-12-28
JPS5478991A (en) 1979-06-23
IT7829830A0 (it) 1978-11-15
DE2849738A1 (de) 1979-05-23
JPS6241434B2 (fr) 1987-09-02

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