IT7829830A0 - Complesso a trasduttore, del tipo a semiconduttore, in contenitore. - Google Patents

Complesso a trasduttore, del tipo a semiconduttore, in contenitore.

Info

Publication number
IT7829830A0
IT7829830A0 IT7829830A IT2983078A IT7829830A0 IT 7829830 A0 IT7829830 A0 IT 7829830A0 IT 7829830 A IT7829830 A IT 7829830A IT 2983078 A IT2983078 A IT 2983078A IT 7829830 A0 IT7829830 A0 IT 7829830A0
Authority
IT
Italy
Prior art keywords
container
transducer assembly
semiconductor type
semiconductor
type
Prior art date
Application number
IT7829830A
Other languages
English (en)
Other versions
IT1101152B (it
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of IT7829830A0 publication Critical patent/IT7829830A0/it
Application granted granted Critical
Publication of IT1101152B publication Critical patent/IT1101152B/it

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0061—Electrical connection means
    • G01L19/0084—Electrical connection means to the outside of the housing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/147—Details about the mounting of the sensor to support or covering means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
IT29830/78A 1977-11-18 1978-11-15 Complesso a trasduttore,del tipo a semiconduttore,in contenitore IT1101152B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/852,909 US4129042A (en) 1977-11-18 1977-11-18 Semiconductor transducer packaged assembly

Publications (2)

Publication Number Publication Date
IT7829830A0 true IT7829830A0 (it) 1978-11-15
IT1101152B IT1101152B (it) 1985-09-28

Family

ID=25314546

Family Applications (1)

Application Number Title Priority Date Filing Date
IT29830/78A IT1101152B (it) 1977-11-18 1978-11-15 Complesso a trasduttore,del tipo a semiconduttore,in contenitore

Country Status (6)

Country Link
US (1) US4129042A (it)
JP (1) JPS5478991A (it)
DE (1) DE2849738C2 (it)
FR (1) FR2409500A1 (it)
GB (1) GB2008319B (it)
IT (1) IT1101152B (it)

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JPS5817421B2 (ja) * 1979-02-02 1983-04-07 日産自動車株式会社 半導体圧力センサ
JPS55112864U (it) * 1979-02-02 1980-08-08
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US4322980A (en) * 1979-11-08 1982-04-06 Hitachi, Ltd. Semiconductor pressure sensor having plural pressure sensitive diaphragms and method
US4342227A (en) * 1980-12-24 1982-08-03 International Business Machines Corporation Planar semiconductor three direction acceleration detecting device and method of fabrication
US4498342A (en) * 1983-04-18 1985-02-12 Honeywell Inc. Integrated silicon accelerometer with stress-free rebalancing
JPH0650270B2 (ja) * 1984-05-21 1994-06-29 株式会社日本自動車部品総合研究所 高圧用圧力検出器
DE3432293A1 (de) * 1984-09-01 1986-03-13 Schaudt Maschinenbau Gmbh, 7000 Stuttgart Spannvorrichtung fuer eine werkzeugmaschine
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DE3814950A1 (de) * 1988-05-03 1989-11-16 Bosch Gmbh Robert Beschleunigungsaufnehmer
IT1223710B (it) * 1988-07-21 1990-09-29 Marelli Autronica Trasduttore di altissima pressione in particolare per il rilevamento della pressione di un fluido idraulico
WO1990003664A1 (fr) * 1988-09-30 1990-04-05 Kabushiki Kaisha Komatsu Seisakusho Capteur de pression
US5049421A (en) * 1989-01-30 1991-09-17 Dresser Industries, Inc. Transducer glass bonding technique
US4922754A (en) * 1989-03-17 1990-05-08 Kennametal Inc. Acoustic emission transducer and mounting adapter for monitoring metalcutting tools
KR930008304B1 (ko) * 1990-04-27 1993-08-27 미쯔비시 덴끼 가부시끼가이샤 진동 검출기
US5164328A (en) * 1990-06-25 1992-11-17 Motorola, Inc. Method of bump bonding and sealing an accelerometer chip onto an integrated circuit chip
DE4137624A1 (de) * 1991-11-15 1993-05-19 Bosch Gmbh Robert Silizium-chip zur verwendung in einem kraftsensor
JP2831195B2 (ja) * 1992-03-25 1998-12-02 富士電機株式会社 半導体加速度センサ
US5665915A (en) * 1992-03-25 1997-09-09 Fuji Electric Co., Ltd. Semiconductor capacitive acceleration sensor
US5346857A (en) * 1992-09-28 1994-09-13 Motorola, Inc. Method for forming a flip-chip bond from a gold-tin eutectic
JPH0875580A (ja) * 1994-09-06 1996-03-22 Mitsubishi Electric Corp 半導体圧力センサ
JPH10104101A (ja) * 1996-10-02 1998-04-24 Mitsubishi Electric Corp 半導体圧力センサ
DE19758462C2 (de) * 1997-04-22 2000-11-30 Fraunhofer Ges Forschung Dosiervorrichtungselement
JP3644205B2 (ja) 1997-08-08 2005-04-27 株式会社デンソー 半導体装置及びその製造方法
DE19743409A1 (de) * 1997-10-01 1999-04-08 Bosch Gmbh Robert Meßvorrichtung zur Messung der Masse eines strömenden Mediums
DE69820477T2 (de) * 1997-10-23 2004-10-07 Texas Instruments Inc Vorrichtung zur Druckmessung in einem Raum mit einem Halbleiterchip
US6050147A (en) * 1997-12-05 2000-04-18 Delco Electronics Corp. Pressure sensor assembly
US6203523B1 (en) 1998-02-02 2001-03-20 Medtronic Inc Implantable drug infusion device having a flow regulator
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US20020003274A1 (en) * 1998-08-27 2002-01-10 Janusz Bryzek Piezoresistive sensor with epi-pocket isolation
US6006607A (en) * 1998-08-31 1999-12-28 Maxim Integrated Products, Inc. Piezoresistive pressure sensor with sculpted diaphragm
US6346742B1 (en) 1998-11-12 2002-02-12 Maxim Integrated Products, Inc. Chip-scale packaged pressure sensor
US6351996B1 (en) 1998-11-12 2002-03-05 Maxim Integrated Products, Inc. Hermetic packaging for semiconductor pressure sensors
US6229190B1 (en) 1998-12-18 2001-05-08 Maxim Integrated Products, Inc. Compensated semiconductor pressure sensor
US6255728B1 (en) * 1999-01-15 2001-07-03 Maxim Integrated Products, Inc. Rigid encapsulation package for semiconductor devices
EP1055921A3 (de) * 1999-05-26 2002-05-08 Infineon Technologies AG Montage eines mikromechanischen Bausteins in einem Gehäuse
US6522762B1 (en) * 1999-09-07 2003-02-18 Microtronic A/S Silicon-based sensor system
JP2001133345A (ja) * 1999-11-02 2001-05-18 Fuji Koki Corp 圧力センサ
KR100638928B1 (ko) * 2001-09-04 2006-10-26 동경 엘렉트론 주식회사 미소 구조체와 이것을 수용하는 패키지 구조체 및 가속도계
US6997059B2 (en) * 2003-10-07 2006-02-14 Cts Corporation Pressure sensor
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US7406870B2 (en) * 2005-01-06 2008-08-05 Ricoh Company, Ltd. Semiconductor sensor
JP4642634B2 (ja) * 2005-10-31 2011-03-02 パナソニック株式会社 音響センサの製造方法
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US9500808B2 (en) 2012-05-09 2016-11-22 The Boeing Company Ruggedized photonic crystal sensor packaging
RU167463U1 (ru) * 2016-08-10 2017-01-10 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" Радиационно стойкий высокотемпературный тензочувствительный элемент преобразователя давления
RU167464U1 (ru) * 2016-08-11 2017-01-10 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" Интегральный чувствительный элемент преобразователя давления с датчиком температуры

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DE2617731C3 (de) * 1976-04-23 1979-06-07 Siemens Ag, 1000 Berlin Und 8000 Muenchen Miniaturdruckmeßwandler

Also Published As

Publication number Publication date
FR2409500B1 (it) 1984-12-28
GB2008319A (en) 1979-05-31
JPS6241434B2 (it) 1987-09-02
US4129042A (en) 1978-12-12
DE2849738C2 (de) 1987-02-26
JPS5478991A (en) 1979-06-23
FR2409500A1 (fr) 1979-06-15
DE2849738A1 (de) 1979-05-23
GB2008319B (en) 1982-02-24
IT1101152B (it) 1985-09-28

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