FR2406302B1 - - Google Patents
Info
- Publication number
- FR2406302B1 FR2406302B1 FR7829058A FR7829058A FR2406302B1 FR 2406302 B1 FR2406302 B1 FR 2406302B1 FR 7829058 A FR7829058 A FR 7829058A FR 7829058 A FR7829058 A FR 7829058A FR 2406302 B1 FR2406302 B1 FR 2406302B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/141—Self-alignment coat gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/147—Silicides
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/840,793 US4224733A (en) | 1977-10-11 | 1977-10-11 | Ion implantation method |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2406302A1 FR2406302A1 (fr) | 1979-05-11 |
FR2406302B1 true FR2406302B1 (fr) | 1983-12-30 |
Family
ID=25283248
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7829058A Granted FR2406302A1 (fr) | 1977-10-11 | 1978-10-11 | Procede d'implantation d'ions |
Country Status (7)
Country | Link |
---|---|
US (1) | US4224733A (fr) |
JP (1) | JPS5910052B2 (fr) |
CA (1) | CA1108311A (fr) |
DE (1) | DE2844162A1 (fr) |
FR (1) | FR2406302A1 (fr) |
GB (1) | GB1601070A (fr) |
NL (1) | NL7810168A (fr) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4477962A (en) * | 1978-05-26 | 1984-10-23 | Rockwell International Corporation | Process for and structure of high density VLSI circuits, having self-aligned gates and contacts for FET devices and conducting lines |
JPS54161894A (en) * | 1978-06-13 | 1979-12-21 | Toshiba Corp | Manufacture of semiconductor device |
DE2923995C2 (de) * | 1979-06-13 | 1985-11-07 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von integrierten MOS-Schaltungen mit MOS-Transistoren und MNOS-Speichertransistoren in Silizium-Gate-Technologie |
US4325169A (en) * | 1979-10-11 | 1982-04-20 | Texas Instruments Incorporated | Method of making CMOS device allowing three-level interconnects |
JPS57500219A (fr) * | 1980-02-22 | 1982-02-04 | ||
US4883543A (en) * | 1980-06-05 | 1989-11-28 | Texas Instruments Incroporated | Shielding for implant in manufacture of dynamic memory |
US4323638A (en) * | 1980-08-18 | 1982-04-06 | Bell Telephone Laboratories, Incorporated | Reducing charging effects in charged-particle-beam lithography |
JPH0559609B1 (fr) * | 1980-11-17 | 1993-08-31 | British Tech Group | |
US4622735A (en) * | 1980-12-12 | 1986-11-18 | Tokyo Shibaura Denki Kabushiki Kaisha | Method for manufacturing a semiconductor device utilizing self-aligned silicide regions |
US4385947A (en) * | 1981-07-29 | 1983-05-31 | Harris Corporation | Method for fabricating CMOS in P substrate with single guard ring using local oxidation |
DE3133468A1 (de) * | 1981-08-25 | 1983-03-17 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen in siliziumgate-technologie |
US4411058A (en) * | 1981-08-31 | 1983-10-25 | Hughes Aircraft Company | Process for fabricating CMOS devices with self-aligned channel stops |
US4420344A (en) * | 1981-10-15 | 1983-12-13 | Texas Instruments Incorporated | CMOS Source/drain implant process without compensation of polysilicon doping |
US4422885A (en) * | 1981-12-18 | 1983-12-27 | Ncr Corporation | Polysilicon-doped-first CMOS process |
JPS5994450A (ja) * | 1982-11-19 | 1984-05-31 | Nec Kyushu Ltd | 半導体装置の製造方法 |
US4470191A (en) * | 1982-12-09 | 1984-09-11 | International Business Machines Corporation | Process for making complementary transistors by sequential implantations using oxidation barrier masking layer |
GB2137806B (en) * | 1983-04-05 | 1986-10-08 | Standard Telephones Cables Ltd | Ion implantation in semiconductor bodies |
US5210042A (en) * | 1983-09-26 | 1993-05-11 | Fujitsu Limited | Method of producing semiconductor device |
JPS60116128A (ja) * | 1983-11-29 | 1985-06-22 | Seiko Instr & Electronics Ltd | 半導体装置の製造方法 |
JPS60130844A (ja) * | 1983-12-20 | 1985-07-12 | Toshiba Corp | 半導体装置の製造方法 |
US4578859A (en) * | 1984-08-22 | 1986-04-01 | Harris Corporation | Implant mask reversal process |
US4561170A (en) * | 1984-07-02 | 1985-12-31 | Texas Instruments Incorporated | Method of making field-plate isolated CMOS devices |
KR940006668B1 (ko) * | 1984-11-22 | 1994-07-25 | 가부시끼가이샤 히다찌세이사꾸쇼 | 반도체 집적회로 장치의 제조방법 |
JPS61222175A (ja) * | 1985-03-01 | 1986-10-02 | Fujitsu Ltd | 半導体記憶装置の製造方法 |
US4694565A (en) * | 1986-04-28 | 1987-09-22 | Rockwell International Corporation | Method of making hardened CMOS sub-micron field effect transistors |
JPH0746727B2 (ja) * | 1986-05-30 | 1995-05-17 | ヤマハ株式会社 | 半導体装置の製法 |
US5066995A (en) * | 1987-03-13 | 1991-11-19 | Harris Corporation | Double level conductor structure |
US4860079A (en) * | 1987-05-29 | 1989-08-22 | Sgs-Thompson Microelectronics, Inc. | Screening of gate oxides on semiconductors |
US4760032A (en) * | 1987-05-29 | 1988-07-26 | Sgs-Thomson Microelectronics, Inc. | Screening of gate oxides on semiconductors |
JPH0748493B2 (ja) * | 1987-06-22 | 1995-05-24 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JPH0770611B2 (ja) * | 1987-12-11 | 1995-07-31 | 日本電気株式会社 | 相補型mos半導体装置の製造方法 |
JPH01206667A (ja) * | 1988-02-15 | 1989-08-18 | Toshiba Corp | Mos型集積回路およびその製造方法 |
JPH0724261B2 (ja) * | 1989-01-20 | 1995-03-15 | 株式会社東芝 | 半導体装置の製造方法 |
US6849872B1 (en) * | 1991-08-26 | 2005-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor |
JPH05343308A (ja) * | 1992-06-09 | 1993-12-24 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JPH09312391A (ja) * | 1996-05-22 | 1997-12-02 | Toshiba Corp | 半導体装置およびその製造方法 |
US6995068B1 (en) | 2000-06-09 | 2006-02-07 | Newport Fab, Llc | Double-implant high performance varactor and method for manufacturing same |
US6815317B2 (en) * | 2002-06-05 | 2004-11-09 | International Business Machines Corporation | Method to perform deep implants without scattering to adjacent areas |
US20040002202A1 (en) * | 2002-06-26 | 2004-01-01 | Horsky Thomas Neil | Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ions |
US9403365B2 (en) * | 2011-04-29 | 2016-08-02 | Funai Electric Co., Ltd. | Method for fabricating fluid ejection device |
US9132639B2 (en) * | 2011-04-29 | 2015-09-15 | Funai Electric Co., Ltd. | Method for fabricating fluid ejection device |
JP6359925B2 (ja) | 2014-09-18 | 2018-07-18 | 株式会社Screenホールディングス | 基板処理装置 |
DE102019100312A1 (de) * | 2019-01-08 | 2020-07-09 | Parcan NanoTech Co. Ltd. | Substrat für eine kontrollierte lonenimplantation und Verfahren zur Herstellung eines Substrats für eine kontrollierte lonenimplantation |
JP2022089648A (ja) * | 2020-12-04 | 2022-06-16 | ローム株式会社 | 半導体装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3330696A (en) * | 1967-07-11 | Method of fabricating thin film capacitors | ||
US3558366A (en) * | 1968-09-17 | 1971-01-26 | Bell Telephone Labor Inc | Metal shielding for ion implanted semiconductor device |
GB1244225A (en) * | 1968-12-31 | 1971-08-25 | Associated Semiconductor Mft | Improvements in and relating to methods of manufacturing semiconductor devices |
GB1289740A (fr) * | 1969-12-24 | 1972-09-20 | ||
US4033797A (en) * | 1973-05-21 | 1977-07-05 | Hughes Aircraft Company | Method of manufacturing a complementary metal-insulation-semiconductor circuit |
US4075754A (en) * | 1974-02-26 | 1978-02-28 | Harris Corporation | Self aligned gate for di-CMOS |
-
1977
- 1977-10-11 US US05/840,793 patent/US4224733A/en not_active Expired - Lifetime
-
1978
- 1978-05-30 GB GB24392/78A patent/GB1601070A/en not_active Expired
- 1978-09-28 CA CA312,282A patent/CA1108311A/fr not_active Expired
- 1978-10-10 NL NL7810168A patent/NL7810168A/xx not_active Application Discontinuation
- 1978-10-10 DE DE2844162A patent/DE2844162A1/de active Pending
- 1978-10-11 JP JP53124237A patent/JPS5910052B2/ja not_active Expired
- 1978-10-11 FR FR7829058A patent/FR2406302A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2406302A1 (fr) | 1979-05-11 |
DE2844162A1 (de) | 1979-04-19 |
CA1108311A (fr) | 1981-09-01 |
GB1601070A (en) | 1981-10-21 |
JPS5910052B2 (ja) | 1984-03-06 |
JPS5464460A (en) | 1979-05-24 |
NL7810168A (nl) | 1979-04-17 |
US4224733A (en) | 1980-09-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |