FR2404891A1 - DYNAMIC ELEMENT OF SEMICONDUCTOR MEMORY - Google Patents

DYNAMIC ELEMENT OF SEMICONDUCTOR MEMORY

Info

Publication number
FR2404891A1
FR2404891A1 FR7826540A FR7826540A FR2404891A1 FR 2404891 A1 FR2404891 A1 FR 2404891A1 FR 7826540 A FR7826540 A FR 7826540A FR 7826540 A FR7826540 A FR 7826540A FR 2404891 A1 FR2404891 A1 FR 2404891A1
Authority
FR
France
Prior art keywords
semiconductor memory
dynamic element
strips
memory element
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7826540A
Other languages
French (fr)
Other versions
FR2404891B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2404891A1 publication Critical patent/FR2404891A1/en
Application granted granted Critical
Publication of FR2404891B1 publication Critical patent/FR2404891B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)

Abstract

a. Elément dynamique de mémoire à semiconducteurs. Dans cet élément de mémoire, qui est réalisé sur une couche semiconductrice 4 au moyen de deux bandes 1 formant conducteur de mots et comportant deux bandes 5, 6 formant conducteurs de bits et situées à une distance dl de la surface du dispositif, la région semiconductrice 4 est plus fortement dopée en surface au niveau d'une zone 16, possédant au maximum une profondeur de quelques 100 nm, que dans les zones situées plus profondément. c. Application notamment aux modules de mémoire à haute densité d'intégration.at. Dynamic semiconductor memory element. In this memory element, which is produced on a semiconductor layer 4 by means of two strips 1 forming a word conductor and comprising two strips 5, 6 forming bit conductors and located at a distance d1 from the surface of the device, the semiconductor region 4 is more heavily doped at the surface at the level of a zone 16, having a maximum depth of some 100 nm, than in the zones situated more deeply. vs. Application in particular to high integration density memory modules.

FR7826540A 1977-09-29 1978-09-15 DYNAMIC ELEMENT OF SEMICONDUCTOR MEMORY Granted FR2404891A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772743948 DE2743948A1 (en) 1977-09-29 1977-09-29 DYNAMIC SEMICONDUCTOR STORAGE ELEMENT

Publications (2)

Publication Number Publication Date
FR2404891A1 true FR2404891A1 (en) 1979-04-27
FR2404891B1 FR2404891B1 (en) 1983-12-02

Family

ID=6020261

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7826540A Granted FR2404891A1 (en) 1977-09-29 1978-09-15 DYNAMIC ELEMENT OF SEMICONDUCTOR MEMORY

Country Status (6)

Country Link
JP (1) JPS5458384A (en)
BE (1) BE870894A (en)
DE (1) DE2743948A1 (en)
FR (1) FR2404891A1 (en)
GB (1) GB2005470B (en)
IT (1) IT1098965B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0007910A1 (en) * 1978-01-03 1980-02-06 ERB, Darrell, M. A stratified charge memory device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04348068A (en) * 1991-03-18 1992-12-03 Toshiba Corp Semiconductor memory device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3685739A (en) * 1970-08-07 1972-08-22 Afa Corp Liquid dispensing apparatus
JPS472778U (en) * 1971-01-27 1972-08-31
JPS4834939U (en) * 1971-08-26 1973-04-26
JPS5137664Y2 (en) * 1972-07-04 1976-09-14

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0007910A1 (en) * 1978-01-03 1980-02-06 ERB, Darrell, M. A stratified charge memory device
EP0007910A4 (en) * 1978-01-03 1980-11-28 Darrell M Erb A stratified charge memory device.

Also Published As

Publication number Publication date
DE2743948A1 (en) 1979-04-12
JPS5458384A (en) 1979-05-11
BE870894A (en) 1979-01-15
IT1098965B (en) 1985-09-18
FR2404891B1 (en) 1983-12-02
GB2005470A (en) 1979-04-19
GB2005470B (en) 1982-05-26
IT7828175A0 (en) 1978-09-28

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Legal Events

Date Code Title Description
ST Notification of lapse