FR2401523A1 - Procede de fixation de paillettes de circuits dans des boitiers - Google Patents

Procede de fixation de paillettes de circuits dans des boitiers

Info

Publication number
FR2401523A1
FR2401523A1 FR7822245A FR7822245A FR2401523A1 FR 2401523 A1 FR2401523 A1 FR 2401523A1 FR 7822245 A FR7822245 A FR 7822245A FR 7822245 A FR7822245 A FR 7822245A FR 2401523 A1 FR2401523 A1 FR 2401523A1
Authority
FR
France
Prior art keywords
spangle
cases
circuit
glitters
fixing circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7822245A
Other languages
English (en)
Other versions
FR2401523B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of FR2401523A1 publication Critical patent/FR2401523A1/fr
Application granted granted Critical
Publication of FR2401523B1 publication Critical patent/FR2401523B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52Mounting semiconductor bodies in containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/2919Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/83801Soldering or alloying
    • H01L2224/83805Soldering or alloying involving forming a eutectic alloy at the bonding interface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00011Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01015Phosphorus [P]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01023Vanadium [V]
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/0665Epoxy resin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/07802Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12042LASER
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)
  • Casings For Electric Apparatus (AREA)

Abstract

L'invention concerne la fixation de circuits paillettes sur un boîtier. Elle se rapporte à un procédé selon lequel du silicium est placé sur la face d'un circuit paillette qui ne porte pas les circuits électriques. Le boîtier est chauffé en atmosphère non réactive et un élément préformé d'or et de silicium est placé entre le boîtier et le circuit paillette qui est alors fixé au boîtier par compression sur le circuit paillette avec formation d'un alliage or-silicium. Application à la fixation de circuits paillettes formés sur du saphir à des boîtiers céramiques.
FR7822245A 1977-08-26 1978-07-27 Procede de fixation de paillettes de circuits dans des boitiers Granted FR2401523A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/828,124 US4181249A (en) 1977-08-26 1977-08-26 Eutectic die attachment method for integrated circuits

Publications (2)

Publication Number Publication Date
FR2401523A1 true FR2401523A1 (fr) 1979-03-23
FR2401523B1 FR2401523B1 (fr) 1983-11-25

Family

ID=25250978

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7822245A Granted FR2401523A1 (fr) 1977-08-26 1978-07-27 Procede de fixation de paillettes de circuits dans des boitiers

Country Status (4)

Country Link
US (1) US4181249A (fr)
JP (1) JPS5447480A (fr)
FR (1) FR2401523A1 (fr)
GB (1) GB2003068B (fr)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4293587A (en) * 1978-11-09 1981-10-06 Zilog, Inc. Low resistance backside preparation for semiconductor integrated circuit chips
US4457976A (en) * 1983-03-28 1984-07-03 Rca Corporation Method for mounting a sapphire chip on a metal base and article produced thereby
US4752180A (en) * 1985-02-14 1988-06-21 Kabushiki Kaisha Toshiba Method and apparatus for handling semiconductor wafers
US4737236A (en) * 1986-09-08 1988-04-12 M/A-Com, Inc. Method of making microwave integrated circuits
DE4107660C2 (de) * 1991-03-09 1995-05-04 Bosch Gmbh Robert Verfahren zur Montage von Silizium-Plättchen auf metallischen Montageflächen
US7011378B2 (en) * 1998-09-03 2006-03-14 Ge Novasensor, Inc. Proportional micromechanical valve
US6523560B1 (en) 1998-09-03 2003-02-25 General Electric Corporation Microvalve with pressure equalization
KR20010090720A (ko) 1998-09-03 2001-10-19 추후제출 비례 마이크로기계 장치
US6197619B1 (en) 1999-01-28 2001-03-06 International Business Machines Corporation Method for reinforcing a semiconductor device to prevent cracking
US6845962B1 (en) * 2000-03-22 2005-01-25 Kelsey-Hayes Company Thermally actuated microvalve device
US6505811B1 (en) 2000-06-27 2003-01-14 Kelsey-Hayes Company High-pressure fluid control valve assembly having a microvalve device attached to fluid distributing substrate
US20070251586A1 (en) * 2003-11-24 2007-11-01 Fuller Edward N Electro-pneumatic control valve with microvalve pilot
US8011388B2 (en) * 2003-11-24 2011-09-06 Microstaq, INC Thermally actuated microvalve with multiple fluid ports
WO2005052420A1 (fr) * 2003-11-24 2005-06-09 Alumina Micro Llc Dispositif de micro-vanne permettant de controler un compresseur a deplacement variable
KR20070012375A (ko) * 2004-02-27 2007-01-25 알루미나 마이크로 엘엘씨 하이브리드 마이크로/매크로 평판 밸브
EP1732653A2 (fr) * 2004-03-05 2006-12-20 Alumina Micro LLC Collage selectif pour formation de micro-vanne
US7156365B2 (en) * 2004-07-27 2007-01-02 Kelsey-Hayes Company Method of controlling microvalve actuator
WO2006076386A1 (fr) * 2005-01-14 2006-07-20 Alumina Micro Llc. Systeme et procede de commande d'un compresseur a debit variable
CN101617155B (zh) 2006-12-15 2012-03-21 麦克罗斯塔克公司 微阀装置
WO2008121369A1 (fr) 2007-03-30 2008-10-09 Microstaq, Inc. Micro-distributeur à tiroir commandé par pilote
WO2008121365A1 (fr) 2007-03-31 2008-10-09 Microstaq, Inc. Distributeur à tiroir commandé par pilote
US8662468B2 (en) * 2008-08-09 2014-03-04 Dunan Microstaq, Inc. Microvalve device
US8113482B2 (en) * 2008-08-12 2012-02-14 DunAn Microstaq Microvalve device with improved fluid routing
US8540207B2 (en) 2008-12-06 2013-09-24 Dunan Microstaq, Inc. Fluid flow control assembly
WO2010117874A2 (fr) 2009-04-05 2010-10-14 Microstaq, Inc. Procédé et structure pour optimiser la performance d'un échangeur de chaleur
WO2011022267A2 (fr) 2009-08-17 2011-02-24 Microstaq, Inc. Dispositif micro-usiné et procédé de commande
WO2011094302A2 (fr) 2010-01-28 2011-08-04 Microstaq, Inc. Procédé de reconditionnement de surface de semiconducteur pour faciliter la liaison
US9006844B2 (en) 2010-01-28 2015-04-14 Dunan Microstaq, Inc. Process and structure for high temperature selective fusion bonding
US8996141B1 (en) 2010-08-26 2015-03-31 Dunan Microstaq, Inc. Adaptive predictive functional controller
US8925793B2 (en) 2012-01-05 2015-01-06 Dunan Microstaq, Inc. Method for making a solder joint
US9140613B2 (en) 2012-03-16 2015-09-22 Zhejiang Dunan Hetian Metal Co., Ltd. Superheat sensor
CN105122436B (zh) * 2013-03-15 2018-09-25 美题隆公司 一种半导体封装件及在其上形成半导体接合区的方法
US9188375B2 (en) 2013-12-04 2015-11-17 Zhejiang Dunan Hetian Metal Co., Ltd. Control element and check valve assembly

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3316628A (en) * 1964-12-30 1967-05-02 United Aircraft Corp Bonding of semiconductor devices to substrates
US3432913A (en) * 1962-12-26 1969-03-18 Philips Corp Method of joining a semi-conductor to a base
FR2078980A5 (en) * 1970-02-24 1971-11-05 Owens Illinois Inc Gold-glass composition for bonding siliconde
US3680196A (en) * 1970-05-08 1972-08-01 Us Navy Process for bonding chip devices to hybrid circuitry
US3986251A (en) * 1974-10-03 1976-10-19 Motorola, Inc. Germanium doped light emitting diode bonding process

Family Cites Families (8)

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Publication number Priority date Publication date Assignee Title
US3235943A (en) * 1962-01-04 1966-02-22 Corning Glass Works Method of making a flux free bonded article
GB1389542A (en) * 1971-06-17 1975-04-03 Mullard Ltd Methods of securing a semiconductor body to a support
US3811182A (en) * 1972-03-31 1974-05-21 Ibm Object handling fixture, system, and process
US3921885A (en) * 1973-06-28 1975-11-25 Rca Corp Method of bonding two bodies together
GB1449212A (en) * 1973-11-24 1976-09-15 Ferranti Ltd Manufacture of supports for semiconductor devices
JPS5227383A (en) * 1975-08-27 1977-03-01 Hitachi Ltd Semiconductor device and its manufacturing process
US4018374A (en) * 1976-06-01 1977-04-19 Ford Aerospace & Communications Corporation Method for forming a bond between sapphire and glass
US4078711A (en) * 1977-04-14 1978-03-14 Rockwell International Corporation Metallurgical method for die attaching silicon on sapphire devices to obtain heat resistant bond

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3432913A (en) * 1962-12-26 1969-03-18 Philips Corp Method of joining a semi-conductor to a base
US3316628A (en) * 1964-12-30 1967-05-02 United Aircraft Corp Bonding of semiconductor devices to substrates
FR2078980A5 (en) * 1970-02-24 1971-11-05 Owens Illinois Inc Gold-glass composition for bonding siliconde
US3680196A (en) * 1970-05-08 1972-08-01 Us Navy Process for bonding chip devices to hybrid circuitry
US3986251A (en) * 1974-10-03 1976-10-19 Motorola, Inc. Germanium doped light emitting diode bonding process

Also Published As

Publication number Publication date
JPS5447480A (en) 1979-04-14
FR2401523B1 (fr) 1983-11-25
GB2003068A (en) 1979-03-07
US4181249A (en) 1980-01-01
GB2003068B (en) 1982-04-28

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