FR2401523A1 - Procede de fixation de paillettes de circuits dans des boitiers - Google Patents
Procede de fixation de paillettes de circuits dans des boitiersInfo
- Publication number
- FR2401523A1 FR2401523A1 FR7822245A FR7822245A FR2401523A1 FR 2401523 A1 FR2401523 A1 FR 2401523A1 FR 7822245 A FR7822245 A FR 7822245A FR 7822245 A FR7822245 A FR 7822245A FR 2401523 A1 FR2401523 A1 FR 2401523A1
- Authority
- FR
- France
- Prior art keywords
- spangle
- cases
- circuit
- glitters
- fixing circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 229910000676 Si alloy Inorganic materials 0.000 abstract 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 230000006835 compression Effects 0.000 abstract 1
- 238000007906 compression Methods 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/83805—Soldering or alloying involving forming a eutectic alloy at the bonding interface
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- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
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- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Die Bonding (AREA)
- Casings For Electric Apparatus (AREA)
Abstract
L'invention concerne la fixation de circuits paillettes sur un boîtier. Elle se rapporte à un procédé selon lequel du silicium est placé sur la face d'un circuit paillette qui ne porte pas les circuits électriques. Le boîtier est chauffé en atmosphère non réactive et un élément préformé d'or et de silicium est placé entre le boîtier et le circuit paillette qui est alors fixé au boîtier par compression sur le circuit paillette avec formation d'un alliage or-silicium. Application à la fixation de circuits paillettes formés sur du saphir à des boîtiers céramiques.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/828,124 US4181249A (en) | 1977-08-26 | 1977-08-26 | Eutectic die attachment method for integrated circuits |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2401523A1 true FR2401523A1 (fr) | 1979-03-23 |
FR2401523B1 FR2401523B1 (fr) | 1983-11-25 |
Family
ID=25250978
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7822245A Granted FR2401523A1 (fr) | 1977-08-26 | 1978-07-27 | Procede de fixation de paillettes de circuits dans des boitiers |
Country Status (4)
Country | Link |
---|---|
US (1) | US4181249A (fr) |
JP (1) | JPS5447480A (fr) |
FR (1) | FR2401523A1 (fr) |
GB (1) | GB2003068B (fr) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4293587A (en) * | 1978-11-09 | 1981-10-06 | Zilog, Inc. | Low resistance backside preparation for semiconductor integrated circuit chips |
US4457976A (en) * | 1983-03-28 | 1984-07-03 | Rca Corporation | Method for mounting a sapphire chip on a metal base and article produced thereby |
US4752180A (en) * | 1985-02-14 | 1988-06-21 | Kabushiki Kaisha Toshiba | Method and apparatus for handling semiconductor wafers |
US4737236A (en) * | 1986-09-08 | 1988-04-12 | M/A-Com, Inc. | Method of making microwave integrated circuits |
DE4107660C2 (de) * | 1991-03-09 | 1995-05-04 | Bosch Gmbh Robert | Verfahren zur Montage von Silizium-Plättchen auf metallischen Montageflächen |
US7011378B2 (en) * | 1998-09-03 | 2006-03-14 | Ge Novasensor, Inc. | Proportional micromechanical valve |
US6523560B1 (en) | 1998-09-03 | 2003-02-25 | General Electric Corporation | Microvalve with pressure equalization |
KR20010090720A (ko) | 1998-09-03 | 2001-10-19 | 추후제출 | 비례 마이크로기계 장치 |
US6197619B1 (en) | 1999-01-28 | 2001-03-06 | International Business Machines Corporation | Method for reinforcing a semiconductor device to prevent cracking |
US6845962B1 (en) * | 2000-03-22 | 2005-01-25 | Kelsey-Hayes Company | Thermally actuated microvalve device |
US6505811B1 (en) | 2000-06-27 | 2003-01-14 | Kelsey-Hayes Company | High-pressure fluid control valve assembly having a microvalve device attached to fluid distributing substrate |
US20070251586A1 (en) * | 2003-11-24 | 2007-11-01 | Fuller Edward N | Electro-pneumatic control valve with microvalve pilot |
US8011388B2 (en) * | 2003-11-24 | 2011-09-06 | Microstaq, INC | Thermally actuated microvalve with multiple fluid ports |
WO2005052420A1 (fr) * | 2003-11-24 | 2005-06-09 | Alumina Micro Llc | Dispositif de micro-vanne permettant de controler un compresseur a deplacement variable |
KR20070012375A (ko) * | 2004-02-27 | 2007-01-25 | 알루미나 마이크로 엘엘씨 | 하이브리드 마이크로/매크로 평판 밸브 |
EP1732653A2 (fr) * | 2004-03-05 | 2006-12-20 | Alumina Micro LLC | Collage selectif pour formation de micro-vanne |
US7156365B2 (en) * | 2004-07-27 | 2007-01-02 | Kelsey-Hayes Company | Method of controlling microvalve actuator |
WO2006076386A1 (fr) * | 2005-01-14 | 2006-07-20 | Alumina Micro Llc. | Systeme et procede de commande d'un compresseur a debit variable |
CN101617155B (zh) | 2006-12-15 | 2012-03-21 | 麦克罗斯塔克公司 | 微阀装置 |
WO2008121369A1 (fr) | 2007-03-30 | 2008-10-09 | Microstaq, Inc. | Micro-distributeur à tiroir commandé par pilote |
WO2008121365A1 (fr) | 2007-03-31 | 2008-10-09 | Microstaq, Inc. | Distributeur à tiroir commandé par pilote |
US8662468B2 (en) * | 2008-08-09 | 2014-03-04 | Dunan Microstaq, Inc. | Microvalve device |
US8113482B2 (en) * | 2008-08-12 | 2012-02-14 | DunAn Microstaq | Microvalve device with improved fluid routing |
US8540207B2 (en) | 2008-12-06 | 2013-09-24 | Dunan Microstaq, Inc. | Fluid flow control assembly |
WO2010117874A2 (fr) | 2009-04-05 | 2010-10-14 | Microstaq, Inc. | Procédé et structure pour optimiser la performance d'un échangeur de chaleur |
WO2011022267A2 (fr) | 2009-08-17 | 2011-02-24 | Microstaq, Inc. | Dispositif micro-usiné et procédé de commande |
WO2011094302A2 (fr) | 2010-01-28 | 2011-08-04 | Microstaq, Inc. | Procédé de reconditionnement de surface de semiconducteur pour faciliter la liaison |
US9006844B2 (en) | 2010-01-28 | 2015-04-14 | Dunan Microstaq, Inc. | Process and structure for high temperature selective fusion bonding |
US8996141B1 (en) | 2010-08-26 | 2015-03-31 | Dunan Microstaq, Inc. | Adaptive predictive functional controller |
US8925793B2 (en) | 2012-01-05 | 2015-01-06 | Dunan Microstaq, Inc. | Method for making a solder joint |
US9140613B2 (en) | 2012-03-16 | 2015-09-22 | Zhejiang Dunan Hetian Metal Co., Ltd. | Superheat sensor |
CN105122436B (zh) * | 2013-03-15 | 2018-09-25 | 美题隆公司 | 一种半导体封装件及在其上形成半导体接合区的方法 |
US9188375B2 (en) | 2013-12-04 | 2015-11-17 | Zhejiang Dunan Hetian Metal Co., Ltd. | Control element and check valve assembly |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3316628A (en) * | 1964-12-30 | 1967-05-02 | United Aircraft Corp | Bonding of semiconductor devices to substrates |
US3432913A (en) * | 1962-12-26 | 1969-03-18 | Philips Corp | Method of joining a semi-conductor to a base |
FR2078980A5 (en) * | 1970-02-24 | 1971-11-05 | Owens Illinois Inc | Gold-glass composition for bonding siliconde |
US3680196A (en) * | 1970-05-08 | 1972-08-01 | Us Navy | Process for bonding chip devices to hybrid circuitry |
US3986251A (en) * | 1974-10-03 | 1976-10-19 | Motorola, Inc. | Germanium doped light emitting diode bonding process |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3235943A (en) * | 1962-01-04 | 1966-02-22 | Corning Glass Works | Method of making a flux free bonded article |
GB1389542A (en) * | 1971-06-17 | 1975-04-03 | Mullard Ltd | Methods of securing a semiconductor body to a support |
US3811182A (en) * | 1972-03-31 | 1974-05-21 | Ibm | Object handling fixture, system, and process |
US3921885A (en) * | 1973-06-28 | 1975-11-25 | Rca Corp | Method of bonding two bodies together |
GB1449212A (en) * | 1973-11-24 | 1976-09-15 | Ferranti Ltd | Manufacture of supports for semiconductor devices |
JPS5227383A (en) * | 1975-08-27 | 1977-03-01 | Hitachi Ltd | Semiconductor device and its manufacturing process |
US4018374A (en) * | 1976-06-01 | 1977-04-19 | Ford Aerospace & Communications Corporation | Method for forming a bond between sapphire and glass |
US4078711A (en) * | 1977-04-14 | 1978-03-14 | Rockwell International Corporation | Metallurgical method for die attaching silicon on sapphire devices to obtain heat resistant bond |
-
1977
- 1977-08-26 US US05/828,124 patent/US4181249A/en not_active Expired - Lifetime
-
1978
- 1978-07-20 GB GB7830557A patent/GB2003068B/en not_active Expired
- 1978-07-27 FR FR7822245A patent/FR2401523A1/fr active Granted
- 1978-08-25 JP JP10373478A patent/JPS5447480A/ja active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3432913A (en) * | 1962-12-26 | 1969-03-18 | Philips Corp | Method of joining a semi-conductor to a base |
US3316628A (en) * | 1964-12-30 | 1967-05-02 | United Aircraft Corp | Bonding of semiconductor devices to substrates |
FR2078980A5 (en) * | 1970-02-24 | 1971-11-05 | Owens Illinois Inc | Gold-glass composition for bonding siliconde |
US3680196A (en) * | 1970-05-08 | 1972-08-01 | Us Navy | Process for bonding chip devices to hybrid circuitry |
US3986251A (en) * | 1974-10-03 | 1976-10-19 | Motorola, Inc. | Germanium doped light emitting diode bonding process |
Also Published As
Publication number | Publication date |
---|---|
JPS5447480A (en) | 1979-04-14 |
FR2401523B1 (fr) | 1983-11-25 |
GB2003068A (en) | 1979-03-07 |
US4181249A (en) | 1980-01-01 |
GB2003068B (en) | 1982-04-28 |
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