FR2437066A1 - Procede de fixation d'un element de contact en metal refractaire sur un corps semi-conducteur par exemple un redresseur et dispositif obtenu - Google Patents

Procede de fixation d'un element de contact en metal refractaire sur un corps semi-conducteur par exemple un redresseur et dispositif obtenu

Info

Publication number
FR2437066A1
FR2437066A1 FR7923481A FR7923481A FR2437066A1 FR 2437066 A1 FR2437066 A1 FR 2437066A1 FR 7923481 A FR7923481 A FR 7923481A FR 7923481 A FR7923481 A FR 7923481A FR 2437066 A1 FR2437066 A1 FR 2437066A1
Authority
FR
France
Prior art keywords
semiconductor body
refractory metal
contact element
metal contact
rectifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7923481A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arris Technology Inc
Original Assignee
Arris Technology Inc
General Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arris Technology Inc, General Instrument Corp filed Critical Arris Technology Inc
Publication of FR2437066A1 publication Critical patent/FR2437066A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H01L23/4924—Bases or plates or solder therefor characterised by the materials
    • H—ELECTRICITY
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
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    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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    • H01L2924/12036—PN diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Wire Bonding (AREA)

Abstract

L'INVENTION CONCERNE UN PROCEDE POUR FIXER UN ELEMENT DE CONTACT EN METAL REFRACTAIRE SUR UN CORPS SEMI-CONDUCTEUR. SELON LE PROCEDE, ON INTERPOSE UNE COUCHE D'ALLIAGE ARGENT-GERMANIUM CONSTITUANT DE PREFERENCE UNE PREFORME 44, 46, ENTRE LA SURFACE D'UN ELEMENT DE CONTACT EN METAL REFRACTAIRE 18, 20 ET LA SURFACE DU CORPS SEMI-CONDUCTEUR 12, ON MAINTIENT LES PARTIES ASSEMBLEES QUAND L'ENSEMBLE EST CHAUFFE JUSQU'A CE QUE L'ALLIAGE PASSE A L'ETAT PATEUX ET ON EFFECTUE UN REFROIDISSEMENT RAPIDE DUDIT ENSEMBLE POUR FAIRE SOLIDIFIER L'ALLIAGE AFIN DE CREER AINSI UNE LIAISON DE HAUTE RESISTANCE. DE PREFERENCE, ON SOUDE ENSUITE DES FILS 30, 32 SUR LES ELEMENTS DE CONTACT ET ON DEPOSE UNE COUCHE PROTECTRICE DE PASSIVATION 42. APPLICATION AUX COMPOSANTS ELECTRONIQUES, NOTAMMENT AUX REDRESSEURS.
FR7923481A 1978-09-22 1979-09-20 Procede de fixation d'un element de contact en metal refractaire sur un corps semi-conducteur par exemple un redresseur et dispositif obtenu Withdrawn FR2437066A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US94475978A 1978-09-22 1978-09-22

Publications (1)

Publication Number Publication Date
FR2437066A1 true FR2437066A1 (fr) 1980-04-18

Family

ID=25482019

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7923481A Withdrawn FR2437066A1 (fr) 1978-09-22 1979-09-20 Procede de fixation d'un element de contact en metal refractaire sur un corps semi-conducteur par exemple un redresseur et dispositif obtenu

Country Status (4)

Country Link
JP (1) JPS5550621A (fr)
DE (1) DE2934299A1 (fr)
FR (1) FR2437066A1 (fr)
GB (1) GB2031223A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2487579A1 (fr) * 1980-07-24 1982-01-29 Silicium Semiconducteur Ssc Procede d'assemblage de diodes semiconductrices et dispositif de mise en oeuvre de ce procede

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846754A (ja) * 1981-09-16 1983-03-18 Iwatsu Electric Co Ltd 秘話回路
JPS607256A (ja) * 1983-06-27 1985-01-16 Kanda Tsushin Kogyo Kk 転送機能付親子電話装置
GB2178683A (en) * 1985-07-11 1987-02-18 Nat Semiconductor Corp Improved semiconductor die-attach method and product
JPH03104460A (ja) * 1989-09-19 1991-05-01 Nippon Conlux Co Ltd 秘話装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1157057A (fr) * 1955-05-10 1958-05-27 Westinghouse Electric Corp Dispositifs semi-conducteurs au silicium et procédé pour la fabrication de ceux-ci
US3242391A (en) * 1962-03-02 1966-03-22 Texas Instruments Inc Gold-germanium eutectic alloy for contact and alloy medium on semiconductor devices
US3996602A (en) * 1975-08-14 1976-12-07 General Instrument Corporation Passivated and encapsulated semiconductors and method of making same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1157057A (fr) * 1955-05-10 1958-05-27 Westinghouse Electric Corp Dispositifs semi-conducteurs au silicium et procédé pour la fabrication de ceux-ci
US3242391A (en) * 1962-03-02 1966-03-22 Texas Instruments Inc Gold-germanium eutectic alloy for contact and alloy medium on semiconductor devices
US3996602A (en) * 1975-08-14 1976-12-07 General Instrument Corporation Passivated and encapsulated semiconductors and method of making same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2487579A1 (fr) * 1980-07-24 1982-01-29 Silicium Semiconducteur Ssc Procede d'assemblage de diodes semiconductrices et dispositif de mise en oeuvre de ce procede

Also Published As

Publication number Publication date
JPS5550621A (en) 1980-04-12
DE2934299A1 (de) 1980-04-03
GB2031223A (en) 1980-04-16

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RE Withdrawal of published application