FR2399486A1 - Ion etching non-oxidisable metal layer - using protective oxidisable metal in an atmos. contg. oxygen - Google Patents

Ion etching non-oxidisable metal layer - using protective oxidisable metal in an atmos. contg. oxygen

Info

Publication number
FR2399486A1
FR2399486A1 FR7724000A FR7724000A FR2399486A1 FR 2399486 A1 FR2399486 A1 FR 2399486A1 FR 7724000 A FR7724000 A FR 7724000A FR 7724000 A FR7724000 A FR 7724000A FR 2399486 A1 FR2399486 A1 FR 2399486A1
Authority
FR
France
Prior art keywords
protective
layer
metal
metal layer
ion etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7724000A
Other languages
French (fr)
Other versions
FR2399486B1 (en
Inventor
Jean-Pierre Andrieu
Jean-Pierre Pestie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Compagnie Generale dElectricite SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Generale dElectricite SA filed Critical Compagnie Generale dElectricite SA
Priority to FR7724000A priority Critical patent/FR2399486A1/en
Publication of FR2399486A1 publication Critical patent/FR2399486A1/en
Application granted granted Critical
Publication of FR2399486B1 publication Critical patent/FR2399486B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks

Abstract

Ion etching a metal layer, esp. a layer of non-oxidisable metal, e.g. according to a pattern of narrow metallic strips on a semiconductor substrate, with strips and gaps of width e.g. about 1 mu, comprises (a) depositing on the metal layer to be etched a metal masking layer of a metal more resistant to ion etching: (b) forming a layer of protective lacquer according to the described pattern of metallisation on the metal protective layer; (c) chemically etching the protective metal layer in the regions not to be metallised, using an etchant only effective on the two protective layers; (d) forming a plasma in the neighbourhood of the layers and ion etching the main metal layer in the regions not to be metallised, using the plasma. The plasma contains >0.1 vol.% O2 and the protective metal layer is an oxidisable metal. The process avoids the necessity for the metallic protective layer to be as thick as the metal layer to be etched when the latter is thick (e.g. is approx. 2 mu) since the O2 present oxides the metal protective layer to form a more ion resistant protective coating.
FR7724000A 1977-08-04 1977-08-04 Ion etching non-oxidisable metal layer - using protective oxidisable metal in an atmos. contg. oxygen Granted FR2399486A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7724000A FR2399486A1 (en) 1977-08-04 1977-08-04 Ion etching non-oxidisable metal layer - using protective oxidisable metal in an atmos. contg. oxygen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7724000A FR2399486A1 (en) 1977-08-04 1977-08-04 Ion etching non-oxidisable metal layer - using protective oxidisable metal in an atmos. contg. oxygen

Publications (2)

Publication Number Publication Date
FR2399486A1 true FR2399486A1 (en) 1979-03-02
FR2399486B1 FR2399486B1 (en) 1981-03-06

Family

ID=9194219

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7724000A Granted FR2399486A1 (en) 1977-08-04 1977-08-04 Ion etching non-oxidisable metal layer - using protective oxidisable metal in an atmos. contg. oxygen

Country Status (1)

Country Link
FR (1) FR2399486A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0056845A2 (en) * 1981-01-27 1982-08-04 Siemens Aktiengesellschaft Formation of metal oxide masks, especially by reactive ion etching
EP0260201A2 (en) * 1986-09-11 1988-03-16 Fairchild Semiconductor Corporation Plasma etching using a bilayer mask
DE3806287A1 (en) * 1988-02-27 1989-09-07 Asea Brown Boveri Etching process for patterning a multilayer metallisation
US5045150A (en) * 1986-09-11 1991-09-03 National Semiconductor Corp. Plasma etching using a bilayer mask
EP1124254A2 (en) * 2000-02-09 2001-08-16 Infineon Technologies North America Corp. Easy to remove hard mask layer for semiconductor device fabrication

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0056845A2 (en) * 1981-01-27 1982-08-04 Siemens Aktiengesellschaft Formation of metal oxide masks, especially by reactive ion etching
EP0056845A3 (en) * 1981-01-27 1982-09-01 Siemens Aktiengesellschaft Berlin Und Munchen Formation of metal oxide masks, especially by reactive ion etching
EP0260201A2 (en) * 1986-09-11 1988-03-16 Fairchild Semiconductor Corporation Plasma etching using a bilayer mask
EP0260201A3 (en) * 1986-09-11 1988-10-26 Fairchild Semiconductor Corporation Plasma etching using a bilayer mask
US5045150A (en) * 1986-09-11 1991-09-03 National Semiconductor Corp. Plasma etching using a bilayer mask
DE3806287A1 (en) * 1988-02-27 1989-09-07 Asea Brown Boveri Etching process for patterning a multilayer metallisation
EP1124254A2 (en) * 2000-02-09 2001-08-16 Infineon Technologies North America Corp. Easy to remove hard mask layer for semiconductor device fabrication
EP1124254A3 (en) * 2000-02-09 2004-09-22 Infineon Technologies North America Corp. Easy to remove hard mask layer for semiconductor device fabrication

Also Published As

Publication number Publication date
FR2399486B1 (en) 1981-03-06

Similar Documents

Publication Publication Date Title
GB1502230A (en) Semiconductor devices
GB1418278A (en) Integrated circuit devices
GB1452633A (en) Fabrication of solar cells with anti-reflective coating
GB1526717A (en) Process for forming an aluminium containing conductor structure
GB1476284A (en) Procuction of structure on a substrate
FR2399486A1 (en) Ion etching non-oxidisable metal layer - using protective oxidisable metal in an atmos. contg. oxygen
GB1491746A (en) Making patterns by sputter etching
US3526555A (en) Method of masking a semiconductor with a liftable metallic layer
GB1374502A (en) Method of radio frequency sputter etching
US4096623A (en) Thyristor and method of producing the same
JPS6459936A (en) Manufacture of integrated circuit
JPS5461478A (en) Chromium plate
JPS6414710A (en) Production of thin film magnetic head
JPS5568655A (en) Manufacturing method of wiring
JPS57139941A (en) Manufacture of semiconductor device
JPS6410540A (en) Formation of multilayer electrode
JPS6437851A (en) Manufacture of semiconductor device
JPS56130940A (en) Manufacture of semiconductor device
GB1475884A (en) substrate
JPS55162244A (en) Forming method of metal wiring
JPS56148824A (en) Formation of electrode
WO2022036549A8 (en) Method of depositing a pre-etch protective layer
GB1329287A (en) Circuit patterns on substrates
JPS57211286A (en) Manufacture of josephson junction element
JPS6439027A (en) Formation of electrode

Legal Events

Date Code Title Description
ST Notification of lapse