FR2393433A1 - Composant semi-conducteur de puissance, commutable dans deux quadrants de la caracteristique courant-tension - Google Patents

Composant semi-conducteur de puissance, commutable dans deux quadrants de la caracteristique courant-tension

Info

Publication number
FR2393433A1
FR2393433A1 FR7815699A FR7815699A FR2393433A1 FR 2393433 A1 FR2393433 A1 FR 2393433A1 FR 7815699 A FR7815699 A FR 7815699A FR 7815699 A FR7815699 A FR 7815699A FR 2393433 A1 FR2393433 A1 FR 2393433A1
Authority
FR
France
Prior art keywords
chip
electrodes
recesses
sides
zones
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7815699A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
BBC Brown Boveri AG Germany
Original Assignee
BBC Brown Boveri AG Switzerland
BBC Brown Boveri AG Germany
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland, BBC Brown Boveri AG Germany filed Critical BBC Brown Boveri AG Switzerland
Publication of FR2393433A1 publication Critical patent/FR2393433A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
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    • H01L2924/01014—Silicon [Si]
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    • H01L2924/01027—Cobalt [Co]
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    • H01L2924/01029—Copper [Cu]
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    • H01L2924/01052—Tellurium [Te]
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    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
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    • H01L2924/01068—Erbium [Er]
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    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
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    • H01L2924/01093—Neptunium [Np]
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    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
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    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
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    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Die Bonding (AREA)

Abstract

Semi-conducteur de puissance du type comportant des successions de zones antiparallèles correspondantes, formées chacune d'au moins quatre zones de types de conductivité alternativement opposés dans un corps semi-conducteur en forme de disque dont les électrodes, réalisées sous forme de métallisations des zones anodiques et cathodiques externes et des deux zones de commande qui sortent au niveau des faces principales, sont mises en contact électrique et thermique sans couche d'arrêt par des connexions principales et de commande correspondantes. Les deux électrodes de commande 10, 10' se trouvent respectivement dans des évidements 9, 9' des électrodes principales 8, 8' et les premières comme les secondes sont mises en contact par pression directe avec leurs connexions correspondantes des deux côtés du corps semi-conducteur.
FR7815699A 1977-05-27 1978-05-26 Composant semi-conducteur de puissance, commutable dans deux quadrants de la caracteristique courant-tension Withdrawn FR2393433A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772723951 DE2723951A1 (de) 1977-05-27 1977-05-27 In zwei quadranten der strom- spannungs-charakteristik schaltbares leistungs-halbleiterbauelement

Publications (1)

Publication Number Publication Date
FR2393433A1 true FR2393433A1 (fr) 1978-12-29

Family

ID=6010004

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7815699A Withdrawn FR2393433A1 (fr) 1977-05-27 1978-05-26 Composant semi-conducteur de puissance, commutable dans deux quadrants de la caracteristique courant-tension

Country Status (4)

Country Link
JP (1) JPS54989A (fr)
DE (1) DE2723951A1 (fr)
FR (1) FR2393433A1 (fr)
SE (1) SE7805235L (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2556881A1 (fr) * 1983-12-14 1985-06-21 Silicium Semiconducteur Ssc Triac a double gachette centrale
FR2566582A1 (fr) * 1984-06-22 1985-12-27 Silicium Semiconducteur Ssc Dispositif bidirectionnel de protection declenche par avalanche
EP0325774A1 (fr) * 1988-01-27 1989-08-02 Asea Brown Boveri Ag Dispositif semi-conducteur de puissance à extinction

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2902224A1 (de) * 1979-01-20 1980-07-24 Bbc Brown Boveri & Cie Kontaktsystem fuer leistungs-halbleiterbauelemente
DE2945380A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Triac mit einem mehrschichten-halbleiterkoerper
JPS61208873A (ja) * 1985-03-13 1986-09-17 Res Dev Corp Of Japan 圧接構造型両面ゲ−ト静電誘導サイリスタ
DE4439012A1 (de) * 1994-11-02 1996-05-09 Abb Management Ag Zweirichtungsthyristor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2556881A1 (fr) * 1983-12-14 1985-06-21 Silicium Semiconducteur Ssc Triac a double gachette centrale
FR2566582A1 (fr) * 1984-06-22 1985-12-27 Silicium Semiconducteur Ssc Dispositif bidirectionnel de protection declenche par avalanche
EP0325774A1 (fr) * 1988-01-27 1989-08-02 Asea Brown Boveri Ag Dispositif semi-conducteur de puissance à extinction

Also Published As

Publication number Publication date
DE2723951A1 (de) 1978-11-30
JPS54989A (en) 1979-01-06
SE7805235L (sv) 1978-11-28

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