DE3482354D1 - Elektrische schaltung eine hybride leistungsschalthalbleiteranordnung mit scr-struktur enthaltend. - Google Patents

Elektrische schaltung eine hybride leistungsschalthalbleiteranordnung mit scr-struktur enthaltend.

Info

Publication number
DE3482354D1
DE3482354D1 DE8484100823T DE3482354T DE3482354D1 DE 3482354 D1 DE3482354 D1 DE 3482354D1 DE 8484100823 T DE8484100823 T DE 8484100823T DE 3482354 T DE3482354 T DE 3482354T DE 3482354 D1 DE3482354 D1 DE 3482354D1
Authority
DE
Germany
Prior art keywords
power switch
electrical circuit
hybrid power
circuit containing
semiconductor arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8484100823T
Other languages
English (en)
Inventor
Bantval Jayant Baliga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of DE3482354D1 publication Critical patent/DE3482354D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE8484100823T 1983-02-04 1984-01-26 Elektrische schaltung eine hybride leistungsschalthalbleiteranordnung mit scr-struktur enthaltend. Expired - Fee Related DE3482354D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US46416183A 1983-02-04 1983-02-04

Publications (1)

Publication Number Publication Date
DE3482354D1 true DE3482354D1 (de) 1990-06-28

Family

ID=23842796

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484100823T Expired - Fee Related DE3482354D1 (de) 1983-02-04 1984-01-26 Elektrische schaltung eine hybride leistungsschalthalbleiteranordnung mit scr-struktur enthaltend.

Country Status (3)

Country Link
EP (1) EP0118007B1 (de)
JP (1) JPS59155169A (de)
DE (1) DE3482354D1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4618872A (en) * 1983-12-05 1986-10-21 General Electric Company Integrated power switching semiconductor devices including IGT and MOSFET structures
JPS63288064A (ja) * 1987-05-20 1988-11-25 Toshiba Corp 複合サイリスタ
JPH0680832B2 (ja) * 1987-09-30 1994-10-12 日本電気株式会社 半導体装置
ATE93654T1 (de) * 1988-04-22 1993-09-15 Asea Brown Boveri Abschaltbares leistungshalbleiterbauelement.
DE69032084T2 (de) * 1989-11-17 1998-07-16 Toshiba Kawasaki Kk Halbleiteranordnung mit zusammengesetzter Bipolar-MOS-Elementpille, geeignet für eine Druckkontaktstruktur
JPH0831606B2 (ja) * 1989-11-17 1996-03-27 株式会社東芝 大電力用半導体装置
DE4127033A1 (de) * 1991-08-16 1993-02-18 Asea Brown Boveri Mos-gesteuerter thyristor mct
JPH07292984A (ja) * 1994-04-22 1995-11-07 Haga Kensetsu:Kk 鉄筋型枠受台
CN104393034B (zh) * 2014-11-25 2017-11-14 电子科技大学 一种mos栅控晶闸管的制造方法
US10554201B2 (en) 2016-07-22 2020-02-04 Abb Schweiz Ag Solid state switch system
US10411694B2 (en) 2016-07-22 2019-09-10 Abb Schweiz Ag Solid state switch system
CN107527951B (zh) * 2017-09-19 2019-11-01 电子科技大学 一种具有高输入电容的阴极短路栅控晶闸管
US11469757B2 (en) 2020-10-16 2022-10-11 Abb Schweiz Ag Solid-state power switch
US11641103B2 (en) 2020-11-06 2023-05-02 Abb Schweiz Ag Power semiconductor switch clamping circuit
US11955900B2 (en) 2021-06-30 2024-04-09 Abb Schweiz Ag Soft turn-off for motor controllers

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2904424C2 (de) * 1979-02-06 1982-09-02 Siemens AG, 1000 Berlin und 8000 München Thyristor mit Steuerung durch Feldeffekttransistor
DE3024015A1 (de) * 1980-06-26 1982-01-07 Siemens AG, 1000 Berlin und 8000 München Steuerbarer halbleiterschalter
FR2488046A1 (fr) * 1980-07-31 1982-02-05 Silicium Semiconducteur Ssc Dispositif de puissance a commande par transistor dmos
SE8107136L (sv) * 1980-12-02 1982-06-03 Gen Electric Styrelektrodforsedd likriktaranordning

Also Published As

Publication number Publication date
JPH043113B2 (de) 1992-01-22
EP0118007A2 (de) 1984-09-12
JPS59155169A (ja) 1984-09-04
EP0118007B1 (de) 1990-05-23
EP0118007A3 (en) 1986-06-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: SIEB, R., DIPL.-CHEM. DR.RER.NAT., PAT.-ANW., 6947 LAUDENBACH

8339 Ceased/non-payment of the annual fee