FR2379164A1 - Disques de grenat d'yttrium-fer sur des substrats de gadolinium-gallium pour des applications de micro-ondes - Google Patents
Disques de grenat d'yttrium-fer sur des substrats de gadolinium-gallium pour des applications de micro-ondesInfo
- Publication number
- FR2379164A1 FR2379164A1 FR7732306A FR7732306A FR2379164A1 FR 2379164 A1 FR2379164 A1 FR 2379164A1 FR 7732306 A FR7732306 A FR 7732306A FR 7732306 A FR7732306 A FR 7732306A FR 2379164 A1 FR2379164 A1 FR 2379164A1
- Authority
- FR
- France
- Prior art keywords
- iron
- yttrium
- layer
- garnet
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- MTRJKZUDDJZTLA-UHFFFAOYSA-N iron yttrium Chemical compound [Fe].[Y] MTRJKZUDDJZTLA-UHFFFAOYSA-N 0.000 title abstract 5
- 239000000758 substrate Substances 0.000 title abstract 3
- OOHCBNJRXZYENK-UHFFFAOYSA-N [Ga].[Gd] Chemical compound [Ga].[Gd] OOHCBNJRXZYENK-UHFFFAOYSA-N 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 239000002223 garnet Substances 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- 229910052742 iron Inorganic materials 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052746 lanthanum Inorganic materials 0.000 abstract 1
- -1 lanthanum ions Chemical class 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229910052727 yttrium Inorganic materials 0.000 abstract 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
- H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Thin Magnetic Films (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Soft Magnetic Materials (AREA)
Abstract
Procédé de fabrication de grenats d'yttrium-fer et nouveaux produits ainsi obtenus. Ce procédé consiste à former un film épitaxial d'un grenat d'yttrium-fer, contenant 0,5 à 1,5 % en atome d'ions lanthane trivalents sur les emplacements de dodécaèdre, sur un substrat tel qu'un grenat 10 de gadolinium-gallium, à former une couche mince de SiO2 sur le film de grenat il d'yttrium-fer, à former une couche de masque photorésistant sur la couche de SiO2 , à retirer des parties de la couche de masque pour exposer des parties de la couche de SiO 2 sous-jacente, à retirer les parties de la couche de SiO2 pour exposer les parties de la couche sous-jacente du grenat d'yttium-fer et à retirer les parties exposées de la couche de grenat d'yttrium-fer afin de former des disques de La:YIG supportés sur le substrat de GGG. La présente invention est particulièrement utile pour fournir un procédé de fabrication de disques de grenat d'yttrium-fer à faible largeur de lignes, convenables pour des applications de micro-ondes.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/763,964 US4060448A (en) | 1977-01-28 | 1977-01-28 | Yttrium iron garnet disks on gadolinium gallium substrates for microwave applications |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2379164A1 true FR2379164A1 (fr) | 1978-08-25 |
| FR2379164B3 FR2379164B3 (fr) | 1980-08-08 |
Family
ID=25069316
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7732306A Granted FR2379164A1 (fr) | 1977-01-28 | 1977-10-26 | Disques de grenat d'yttrium-fer sur des substrats de gadolinium-gallium pour des applications de micro-ondes |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4060448A (fr) |
| JP (1) | JPS6026284B2 (fr) |
| CA (1) | CA1078971A (fr) |
| DE (1) | DE2803040A1 (fr) |
| FR (1) | FR2379164A1 (fr) |
| GB (1) | GB1585737A (fr) |
| IT (1) | IT1116332B (fr) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7608002A (nl) * | 1976-07-20 | 1978-01-24 | Philips Nv | Werkwijze ter vervaardiging van een magnetische inrichting. |
| JPS5933244B2 (ja) * | 1977-03-02 | 1984-08-14 | 株式会社日立製作所 | 磁気バブル記憶素子 |
| US4101707A (en) * | 1977-04-04 | 1978-07-18 | Rockwell International Corporation | Homogeneous multilayer dielectric mirror and method of making same |
| DE2732282C3 (de) * | 1977-07-16 | 1982-03-25 | Gesellschaft für Schwerionenforschung mbH, 6100 Darmstadt | Verfahren zum Herstellen einer magnetischen Speicherschicht |
| US4983936A (en) * | 1986-07-02 | 1991-01-08 | Sony Corporation | Ferromagnetic resonance device |
| CA1271237A (fr) * | 1986-07-02 | 1990-07-03 | Yoshikazu Murakami | Dispositif resonnateur ferromagnetique |
| JPH0788578B2 (ja) * | 1991-07-10 | 1995-09-27 | 財団法人国際超電導産業技術研究センター | 酸化物薄膜の製造方法および装置 |
| US6114188A (en) * | 1996-04-12 | 2000-09-05 | Northeastern University | Method of fabricating an integrated complex-transition metal oxide device |
| WO1998052202A1 (fr) * | 1997-05-15 | 1998-11-19 | Tdk Corporation | Dispositif a ondes magnetostatiques et son procede de fabrication |
| CN112216507B (zh) * | 2020-09-30 | 2022-03-15 | 电子科技大学 | 无支撑铁氧体磁性薄膜的制备方法及其应用 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3753814A (en) * | 1970-12-28 | 1973-08-21 | North American Rockwell | Confinement of bubble domains in film-substrate structures |
| NL7406382A (nl) * | 1974-05-13 | 1975-11-17 | Philips Nv | Werkwijze ter vervaardiging van een magnetiseer- bare laag voor een magnetische inrichting met domeinen. |
-
1977
- 1977-01-28 US US05/763,964 patent/US4060448A/en not_active Expired - Lifetime
- 1977-08-26 CA CA285,561A patent/CA1078971A/fr not_active Expired
- 1977-09-30 IT IT69158/77A patent/IT1116332B/it active
- 1977-10-24 JP JP52127477A patent/JPS6026284B2/ja not_active Expired
- 1977-10-26 FR FR7732306A patent/FR2379164A1/fr active Granted
-
1978
- 1978-01-25 DE DE19782803040 patent/DE2803040A1/de not_active Ceased
- 1978-01-27 GB GB3409/78A patent/GB1585737A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5396493A (en) | 1978-08-23 |
| GB1585737A (en) | 1981-03-11 |
| US4060448A (en) | 1977-11-29 |
| FR2379164B3 (fr) | 1980-08-08 |
| JPS6026284B2 (ja) | 1985-06-22 |
| CA1078971A (fr) | 1980-06-03 |
| IT1116332B (it) | 1986-02-10 |
| DE2803040A1 (de) | 1978-08-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| FR2379164A1 (fr) | Disques de grenat d'yttrium-fer sur des substrats de gadolinium-gallium pour des applications de micro-ondes | |
| Paradis et al. | RF sputtered epitaxial ZnO films on sapphire for integrated optics | |
| KR910008872A (ko) | 반도체 소자와 그 제조방법 | |
| US3708403A (en) | Self-aligning electroplating mask | |
| EP0146796A3 (fr) | Procédé pour la fabrication des fentes de tête magnétique à films minces par dissipation | |
| JP2679083B2 (ja) | 磁気光学ガーネット | |
| JPS5990852A (ja) | フオトマスクブランク | |
| JPS6090414A (ja) | 表面音波装置 | |
| JPS5617917A (en) | Manufacture of silicon oxide film | |
| Sadagopan et al. | HIGH‐DENSITY BUBBLE DOMAIN SHIFT REGISTER | |
| GB1465906A (en) | Supporting ferri-magnetic film | |
| Owens et al. | Planar microwave multipole filters using LPE YIG | |
| FR2402944A1 (fr) | Procede de realisation d'un compose superficiel entre un substrat et une espece reactive | |
| JPS5582778A (en) | Sputtering apparatus | |
| JPS58140111A (ja) | 半導体結晶の成長方法 | |
| JPS5990853A (ja) | フオトマスクブランク | |
| US3919055A (en) | Bubble domain detector contact | |
| EP0288661B1 (fr) | Procédé de décarburation sélective des alliages ferreux | |
| KR20010014535A (ko) | 정자파 디바이스 | |
| JPS56130940A (en) | Manufacture of semiconductor device | |
| KR950015838A (ko) | 마이크로파용 고온초전도 대역통과필터의 제조방법 | |
| JPS59106122A (ja) | 半導体装置の製造方法 | |
| Toshima et al. | Magnetic head fabricated by improved ion etching method | |
| JPS54162688A (en) | Forming method for oxide single crystal thin film | |
| JPH02232606A (ja) | 薄膜導波型光アイソレータの製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| CD | Change of name or company name |