FR2376510A1 - Projecteur photoelectronique d'images - Google Patents
Projecteur photoelectronique d'imagesInfo
- Publication number
- FR2376510A1 FR2376510A1 FR7737041A FR7737041A FR2376510A1 FR 2376510 A1 FR2376510 A1 FR 2376510A1 FR 7737041 A FR7737041 A FR 7737041A FR 7737041 A FR7737041 A FR 7737041A FR 2376510 A1 FR2376510 A1 FR 2376510A1
- Authority
- FR
- France
- Prior art keywords
- mask
- electrode
- semiconductor
- semiconductor wafer
- prodn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/047—Changing particle velocity
- H01J2237/0473—Changing particle velocity accelerating
- H01J2237/04735—Changing particle velocity accelerating with electrostatic means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31777—Lithography by projection
- H01J2237/31779—Lithography by projection from patterned photocathode
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Abstract
L'invention concerne un projecteur photoélectronique d'images. Ce projecteur destiné à former l'image d'un masque 4 sur une préparation 5 comporte une photocathode 3 pouvant être éclairée par des lampes à ultraviolets 9, le support 2 de la préparation 5 étant relié à un potentiel fortement négatif, tandis qu'une électrode auxiliaire 6 placée entre un marque 4 de la photocathode 3 et la préparation 5 sert d'électrode positive pour le champ électrique. Application notamment à la réalisation de modèles sur des pastilles semi-conductrices pour circuits intégrés.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19772700357 DE2700357A1 (de) | 1977-01-04 | 1977-01-04 | Fotoelektronischer bildprojektor |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2376510A1 true FR2376510A1 (fr) | 1978-07-28 |
Family
ID=5998186
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7737041A Withdrawn FR2376510A1 (fr) | 1977-01-04 | 1977-12-08 | Projecteur photoelectronique d'images |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5385176A (fr) |
DE (1) | DE2700357A1 (fr) |
FR (1) | FR2376510A1 (fr) |
NL (1) | NL7713549A (fr) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0136752A2 (fr) * | 1983-09-05 | 1985-04-10 | Philips Electronics Uk Limited | Projecteur d'image électronique |
EP0157457A2 (fr) * | 1984-04-02 | 1985-10-09 | Philips Electronics Uk Limited | Projecteur d'image électronique |
EP0161723A2 (fr) * | 1984-05-18 | 1985-11-21 | Philips Electronics Uk Limited | Appareil de lithographie électronique |
EP0334334A2 (fr) * | 1988-03-23 | 1989-09-27 | Fujitsu Limited | Appareil de projection d'image photocathodique pour l'obtention de motifs sur un dispositif semi-conducteur |
EP0445787A1 (fr) * | 1990-03-06 | 1991-09-11 | Ebara Research Co., Ltd. | Composant émettant des photo-électrons et utilisation à cet effet |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5558528A (en) * | 1978-10-25 | 1980-05-01 | Nippon Telegr & Teleph Corp <Ntt> | Electron beam projecting/imaging device |
GB2147141A (en) * | 1983-09-26 | 1985-05-01 | Philips Electronic Associated | Electron image projector |
-
1977
- 1977-01-04 DE DE19772700357 patent/DE2700357A1/de active Pending
- 1977-12-07 NL NL7713549A patent/NL7713549A/xx not_active Application Discontinuation
- 1977-12-08 FR FR7737041A patent/FR2376510A1/fr not_active Withdrawn
- 1977-12-27 JP JP16096377A patent/JPS5385176A/ja active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0136752A2 (fr) * | 1983-09-05 | 1985-04-10 | Philips Electronics Uk Limited | Projecteur d'image électronique |
EP0136752A3 (en) * | 1983-09-05 | 1986-12-30 | Philips Electronic And Associated Industries Limited | Electron image projector |
EP0157457A2 (fr) * | 1984-04-02 | 1985-10-09 | Philips Electronics Uk Limited | Projecteur d'image électronique |
EP0157457A3 (en) * | 1984-04-02 | 1987-01-07 | Philips Electronic And Associated Industries Limited | Electron image projector |
EP0161723A2 (fr) * | 1984-05-18 | 1985-11-21 | Philips Electronics Uk Limited | Appareil de lithographie électronique |
EP0161723A3 (en) * | 1984-05-18 | 1987-01-07 | Philips Electronic And Associated Industries Limited | Electron lithography apparatus |
EP0334334A2 (fr) * | 1988-03-23 | 1989-09-27 | Fujitsu Limited | Appareil de projection d'image photocathodique pour l'obtention de motifs sur un dispositif semi-conducteur |
EP0334334A3 (fr) * | 1988-03-23 | 1991-01-23 | Fujitsu Limited | Appareil de projection d'image photocathodique pour l'obtention de motifs sur un dispositif semi-conducteur |
US5023462A (en) * | 1988-03-23 | 1991-06-11 | Fujitsu Limited | Photo-cathode image projection apparatus for patterning a semiconductor device |
EP0445787A1 (fr) * | 1990-03-06 | 1991-09-11 | Ebara Research Co., Ltd. | Composant émettant des photo-électrons et utilisation à cet effet |
US5154733A (en) * | 1990-03-06 | 1992-10-13 | Ebara Research Co., Ltd. | Photoelectron emitting member and method of electrically charging fine particles with photoelectrons |
Also Published As
Publication number | Publication date |
---|---|
JPS5385176A (en) | 1978-07-27 |
NL7713549A (nl) | 1978-07-06 |
DE2700357A1 (de) | 1978-07-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2312104A1 (fr) | Canon generateur d'electrons excite par un plasma | |
JPS6410563A (en) | Electric charging suppressor of ion implanter | |
JPS5367972A (en) | Electrode for elctric discharge lamp | |
JPS5682552A (en) | Two beam one electron gun cathode ray tube | |
FR2376510A1 (fr) | Projecteur photoelectronique d'images | |
JPS6439021A (en) | X-ray mask | |
GB982669A (en) | Improvements in or relating to electron beam generators | |
ES455017A1 (es) | Un metodo para fabricar un tubo de exhibicion de imagenes decolor. | |
JPS5698827A (en) | Electron beam exposure device | |
JPS53114679A (en) | Plasm etching unit | |
US3914637A (en) | Method and apparatus for focusing an electron beam | |
SE406140B (sv) | Anordning for hogfrekvensfokusering av en partikelstrale av elektriskt laddade partiklar, vilka accelereras i en accelerator av cyklotrontypen | |
JPS538377A (en) | Apparatus for high frequency sputtering | |
SU543915A1 (ru) | Установка проекционной электронной литографии | |
GB1505741A (en) | X-ray lithography | |
GB1090745A (en) | Flow counter for measurement of radioactive materials | |
GB803742A (en) | Improvements relating to mass spectrometers | |
JPS51132073A (en) | Manufacturing method of thin film electric field irradiation type elec tron beam source | |
JPS52144384A (en) | Vacuum evaporation | |
GB632963A (en) | Improvements in and relating to mass spectrometers | |
GB1302144A (fr) | ||
JPS51136277A (en) | Lens for electron particle beam | |
GB1536174A (en) | Fast triplanar detector | |
GB1469853A (en) | Method of exposing a surface of a body provided with an electron resist thereon to an image in electrons | |
SU518663A1 (ru) | Способ измерени давлени в двухэлектродном электровакуумном приборе |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |