FR2373160A1 - Procede de fabrication d'une couche dielectrique - Google Patents
Procede de fabrication d'une couche dielectriqueInfo
- Publication number
- FR2373160A1 FR2373160A1 FR7736175A FR7736175A FR2373160A1 FR 2373160 A1 FR2373160 A1 FR 2373160A1 FR 7736175 A FR7736175 A FR 7736175A FR 7736175 A FR7736175 A FR 7736175A FR 2373160 A1 FR2373160 A1 FR 2373160A1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- dielectric layer
- coordinates
- point
- xga2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
- G02F1/0018—Electro-optical materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Nonlinear Science (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Insulating Materials (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
a. Procédé de fabrication d'une couche diélectrique b. Procédé caractérisé en ce que le pseudisystème à trois composants étant choisi de façon que dans un diagramme ternaire Bi2 O3 , Ge O2 et (Y + xGa2 O3 ), le rapport Bi2 O3 /Ge O2 /(Y + xGa2 O3 ) en rapport molaire est entouré par une plage reliant trois points A, B, C, le point A ayant des coordonnées 0,760/0,002/0,238, le point B ayant comme coordonnées 0,004/0,002/0,004, et le point C ayant comme coordonnées 0,760/0,004 et x satisfaisant à la condition 0,05 < x < 5,0.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51145866A JPS5935482B2 (ja) | 1976-12-03 | 1976-12-03 | 誘電体薄膜の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2373160A1 true FR2373160A1 (fr) | 1978-06-30 |
FR2373160B1 FR2373160B1 (fr) | 1981-02-06 |
Family
ID=15394860
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7736175A Granted FR2373160A1 (fr) | 1976-12-03 | 1977-11-30 | Procede de fabrication d'une couche dielectrique |
Country Status (5)
Country | Link |
---|---|
US (1) | US4235663A (fr) |
JP (1) | JPS5935482B2 (fr) |
CA (1) | CA1089114A (fr) |
DE (1) | DE2753787C2 (fr) |
FR (1) | FR2373160A1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6126779U (ja) * | 1984-07-25 | 1986-02-18 | 松下電工株式会社 | 簡易据え置き便器 |
JPS6217099A (ja) * | 1985-07-16 | 1987-01-26 | Kokusai Denshin Denwa Co Ltd <Kdd> | ビスマス含有酸化物単結晶の製造方法 |
KR100603354B1 (ko) * | 2004-06-26 | 2006-07-20 | 삼성에스디아이 주식회사 | Pdp 보호막 형성용 조성물, 이를 이용하여 제조된 pdp 보호막, 보호막의 제조방법, 및 이를 채용한 pdp |
CN110992853B (zh) * | 2019-11-19 | 2021-03-12 | 西安交通大学 | 一种发光水晶字的制备方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4092208A (en) * | 1974-11-27 | 1978-05-30 | U.S. Philips Corporation | Method of growing single crystals of rare earth metal iron garnet materials |
JPS5738560B2 (fr) * | 1975-02-24 | 1982-08-16 |
-
1976
- 1976-12-03 JP JP51145866A patent/JPS5935482B2/ja not_active Expired
-
1977
- 1977-11-29 CA CA291,959A patent/CA1089114A/fr not_active Expired
- 1977-11-30 FR FR7736175A patent/FR2373160A1/fr active Granted
- 1977-12-01 US US05/856,269 patent/US4235663A/en not_active Expired - Lifetime
- 1977-12-02 DE DE2753787A patent/DE2753787C2/de not_active Expired
Non-Patent Citations (1)
Title |
---|
EXBK/73 * |
Also Published As
Publication number | Publication date |
---|---|
DE2753787C2 (de) | 1983-11-10 |
JPS5370398A (en) | 1978-06-22 |
US4235663A (en) | 1980-11-25 |
JPS5935482B2 (ja) | 1984-08-29 |
FR2373160B1 (fr) | 1981-02-06 |
CA1089114A (fr) | 1980-11-04 |
DE2753787A1 (de) | 1978-06-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |