FR2372548A1 - Dispositif de commande a transistors a effet de champ travaillant en mode d'enrichissement/appauvrissement - Google Patents
Dispositif de commande a transistors a effet de champ travaillant en mode d'enrichissement/appauvrissementInfo
- Publication number
- FR2372548A1 FR2372548A1 FR7731535A FR7731535A FR2372548A1 FR 2372548 A1 FR2372548 A1 FR 2372548A1 FR 7731535 A FR7731535 A FR 7731535A FR 7731535 A FR7731535 A FR 7731535A FR 2372548 A1 FR2372548 A1 FR 2372548A1
- Authority
- FR
- France
- Prior art keywords
- control device
- effect transistor
- field
- transistors
- transistor control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
- H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
- H03K19/01714—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by bootstrapping, i.e. by positive feed-back
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
- H03K19/09443—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type using a combination of enhancement and depletion transistors
- H03K19/09445—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type using a combination of enhancement and depletion transistors with active depletion transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/02—Shaping pulses by amplifying
- H03K5/023—Shaping pulses by amplifying using field effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Logic Circuits (AREA)
- Electronic Switches (AREA)
- Amplifiers (AREA)
Abstract
Dispositif de commande à transistors à effet de champ. Ce dispositif comprend un inverseur constitué par les transistors FET T1 , T2 et un circuit de sortie push-pull constitué des transistors T6 , T 7 . L'entrée de ce circuit push-pull sur la porte de T6 , est renforcée par une contre-réaction constituée par le montage en série du condensateur CB et du transistor FET T1 à appauvrissement commandé par l'entrée VE . T4 reçoit donc une phase du signal d'entrée tandis que l'inverseur fournit sur les portes des transistors T3 , T5 la phase opposée. Le transistor T8 renforce l'alimentation en courant de la sortie. Ce circuit permet d'obtenir une sortie avec une excursion de tension améliorée, une meilleure réponse transitoire et une dissipation de puissance réduite.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/745,735 US4071783A (en) | 1976-11-29 | 1976-11-29 | Enhancement/depletion mode field effect transistor driver |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2372548A1 true FR2372548A1 (fr) | 1978-06-23 |
FR2372548B1 FR2372548B1 (fr) | 1982-10-15 |
Family
ID=24998029
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7731535A Granted FR2372548A1 (fr) | 1976-11-29 | 1977-10-07 | Dispositif de commande a transistors a effet de champ travaillant en mode d'enrichissement/appauvrissement |
Country Status (5)
Country | Link |
---|---|
US (1) | US4071783A (fr) |
JP (1) | JPS5368967A (fr) |
DE (1) | DE2752473A1 (fr) |
FR (1) | FR2372548A1 (fr) |
GB (1) | GB1589414A (fr) |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1573771A (en) * | 1977-09-26 | 1980-08-28 | Philips Electronic Associated | Buffer circuit |
JPS54152454A (en) * | 1978-05-22 | 1979-11-30 | Nec Corp | Mos inverter buffer circuit |
US4176289A (en) * | 1978-06-23 | 1979-11-27 | Electronic Memories & Magnetics Corporation | Driving circuit for integrated circuit semiconductor memory |
US4295064A (en) * | 1978-06-30 | 1981-10-13 | International Business Machines Corporation | Logic and array logic driving circuits |
JPS5513566A (en) * | 1978-07-17 | 1980-01-30 | Hitachi Ltd | Mis field effect semiconductor circuit device |
US4239990A (en) * | 1978-09-07 | 1980-12-16 | Texas Instruments Incorporated | Clock voltage generator for semiconductor memory with reduced power dissipation |
US4239991A (en) * | 1978-09-07 | 1980-12-16 | Texas Instruments Incorporated | Clock voltage generator for semiconductor memory |
DE2851825A1 (de) * | 1978-11-30 | 1980-06-12 | Siemens Ag | Integrierte halbleiterschaltung mit mis-feldeffekttransistoren |
US4318013A (en) * | 1979-05-01 | 1982-03-02 | Motorola, Inc. | High voltage detection circuit |
US4284905A (en) * | 1979-05-31 | 1981-08-18 | Bell Telephone Laboratories, Incorporated | IGFET Bootstrap circuit |
JPS5619585A (en) * | 1979-07-26 | 1981-02-24 | Toshiba Corp | Semiconductor memory unit |
JPS5628527A (en) * | 1979-08-15 | 1981-03-20 | Nec Corp | Driving circuit |
US4395644A (en) * | 1979-08-15 | 1983-07-26 | Nippon Electric Co., Ltd. | Drive circuit |
US4317051A (en) * | 1979-10-09 | 1982-02-23 | Bell Telephone Laboratories, Incorporated | Clock generator (buffer) circuit |
JPS5693422A (en) * | 1979-12-05 | 1981-07-29 | Fujitsu Ltd | Level-up circuit |
US4309630A (en) * | 1979-12-10 | 1982-01-05 | Bell Telephone Laboratories, Incorporated | Buffer circuitry |
JPS56129570A (en) * | 1980-03-14 | 1981-10-09 | Mitsubishi Electric Corp | Booster circuit |
US4500799A (en) * | 1980-07-28 | 1985-02-19 | Inmos Corporation | Bootstrap driver circuits for an MOS memory |
US4570244A (en) * | 1980-07-28 | 1986-02-11 | Inmos Corporation | Bootstrap driver for a static RAM |
US4376252A (en) * | 1980-08-25 | 1983-03-08 | International Business Machines Corporation | Bootstrapped driver circuit |
DE3174470D1 (en) * | 1980-09-26 | 1986-05-28 | Toshiba Kk | Dynamic signal generation circuit |
US4491748A (en) * | 1981-04-16 | 1985-01-01 | International Business Machines Corporation | High performance FET driver circuit |
JPS57196627A (en) * | 1981-05-29 | 1982-12-02 | Hitachi Ltd | Electronic circuit device |
US4441039A (en) * | 1981-11-20 | 1984-04-03 | International Business Machines Corporation | Input buffer circuit for semiconductor memory |
US4472644A (en) * | 1981-12-10 | 1984-09-18 | Mostek Corporation | Bootstrapped clock driver including delay means |
JPS58185091A (ja) * | 1982-04-24 | 1983-10-28 | Toshiba Corp | 昇圧電圧出力回路および昇圧電圧出力回路を備えたアドレスデコ−ド回路 |
JPS58215823A (ja) * | 1982-06-09 | 1983-12-15 | Mitsubishi Electric Corp | ドライバ−回路 |
US4546276A (en) * | 1982-07-29 | 1985-10-08 | At&T Bell Laboratories | Full output voltage driver circuit using bootstrap capacitor and controlled delay circuitry |
US4518926A (en) * | 1982-12-20 | 1985-05-21 | At&T Bell Laboratories | Gate-coupled field-effect transistor pair amplifier |
USH97H (en) * | 1982-12-21 | 1986-08-05 | At&T Bell Laboratories | Row-address-decoder-driver circuit |
US4542310A (en) * | 1983-06-29 | 1985-09-17 | International Business Machines Corporation | CMOS bootstrapped pull up circuit |
DE3323446A1 (de) * | 1983-06-29 | 1985-01-10 | Siemens AG, 1000 Berlin und 8000 München | Eingangssignalpegelwandler fuer eine mos-digitalschaltung |
US4585953A (en) * | 1983-07-20 | 1986-04-29 | International Business Machines Corporation | Low power off-chip driver circuit |
DE3329093A1 (de) * | 1983-08-11 | 1985-02-28 | Siemens AG, 1000 Berlin und 8000 München | Dynamischer mos-schaltkreis |
US4522504A (en) * | 1983-12-08 | 1985-06-11 | Pyles Division | Linear in-line mixing system |
US4599520A (en) * | 1984-01-31 | 1986-07-08 | International Business Machines Corporation | Boosted phase driver |
NL8400523A (nl) * | 1984-02-20 | 1985-09-16 | Philips Nv | Geintegreerde logische bufferschakeling. |
JP2544343B2 (ja) * | 1985-02-07 | 1996-10-16 | 株式会社日立製作所 | 半導体集積回路装置 |
US4694201A (en) * | 1985-04-30 | 1987-09-15 | Motorola, Inc. | Current-saving CMOS input buffer |
IT1185851B (it) * | 1985-08-02 | 1987-11-18 | Sgs Microelettronica Spa | Circuito di pilotaggio con boctstrap in tecnologia n-mos per carichi capacitivi |
US4656367A (en) * | 1985-10-18 | 1987-04-07 | International Business Machines Corporation | Speed up of up-going transition of TTL or DTL circuits under high _capacitive load |
US4798972A (en) * | 1987-03-03 | 1989-01-17 | Digital Equipment Corporation | Apparatus and method for capacitor coupled complementary buffering |
US4777389A (en) * | 1987-08-13 | 1988-10-11 | Advanced Micro Devices, Inc. | Output buffer circuits for reducing ground bounce noise |
US4823024A (en) * | 1988-06-29 | 1989-04-18 | Ncr Corporation | Signal edge trimmer circuit |
KR0154157B1 (ko) * | 1994-04-29 | 1998-12-15 | 김주용 | 반도체 소자의 부스트랩 회로 |
FR2760151B1 (fr) * | 1997-02-25 | 1999-05-14 | Sgs Thomson Microelectronics | Amplificateur-tampon de commande de bus |
DE19739807C2 (de) * | 1997-09-10 | 2000-06-15 | Siemens Ag | Pegelumsetzschaltung |
US6154063A (en) * | 1999-04-26 | 2000-11-28 | Maxim Integrated Products, Inc. | Class AB emitter follower buffers |
US6426613B1 (en) * | 2001-05-04 | 2002-07-30 | Semiconductor Components Industries Llc | Reduced drop out driver and method of using |
KR100621561B1 (ko) * | 2004-11-05 | 2006-09-19 | 삼성전자주식회사 | Cmos 이미지 센서 및 그 구동 방법 |
US7898301B2 (en) * | 2008-03-21 | 2011-03-01 | Freescale Semiconductor, Inc. | Zero input current-drain comparator with high accuracy trip point above supply voltage |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2521949A1 (de) * | 1975-05-16 | 1976-11-25 | Itt Ind Gmbh Deutsche | Monolithisch integrierbare mis- treiberstufe |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3912948A (en) * | 1971-08-30 | 1975-10-14 | Nat Semiconductor Corp | Mos bootstrap inverter circuit |
US3855581A (en) * | 1971-12-30 | 1974-12-17 | Mos Technology Inc | Semiconductor device and circuits |
US3988617A (en) * | 1974-12-23 | 1976-10-26 | International Business Machines Corporation | Field effect transistor bias circuit |
-
1976
- 1976-11-29 US US05/745,735 patent/US4071783A/en not_active Expired - Lifetime
-
1977
- 1977-10-07 FR FR7731535A patent/FR2372548A1/fr active Granted
- 1977-11-01 JP JP13037977A patent/JPS5368967A/ja active Granted
- 1977-11-15 GB GB47496/77A patent/GB1589414A/en not_active Expired
- 1977-11-24 DE DE19772752473 patent/DE2752473A1/de not_active Withdrawn
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2521949A1 (de) * | 1975-05-16 | 1976-11-25 | Itt Ind Gmbh Deutsche | Monolithisch integrierbare mis- treiberstufe |
FR2311407A1 (fr) * | 1975-05-16 | 1976-12-10 | Itt | Etage de commande mis integrable monolithiquement |
Non-Patent Citations (2)
Title |
---|
NV700/71 * |
NV700/75 * |
Also Published As
Publication number | Publication date |
---|---|
JPS5647733B2 (fr) | 1981-11-11 |
US4071783A (en) | 1978-01-31 |
GB1589414A (en) | 1981-05-13 |
JPS5368967A (en) | 1978-06-19 |
FR2372548B1 (fr) | 1982-10-15 |
DE2752473A1 (de) | 1978-06-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |