FR2367354A1 - Thyristor a courts-circuits d'emetteur et son application - Google Patents

Thyristor a courts-circuits d'emetteur et son application

Info

Publication number
FR2367354A1
FR2367354A1 FR7730079A FR7730079A FR2367354A1 FR 2367354 A1 FR2367354 A1 FR 2367354A1 FR 7730079 A FR7730079 A FR 7730079A FR 7730079 A FR7730079 A FR 7730079A FR 2367354 A1 FR2367354 A1 FR 2367354A1
Authority
FR
France
Prior art keywords
thyristor
application
short circuits
cathode
trigger
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7730079A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Publication of FR2367354A1 publication Critical patent/FR2367354A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Ignition Installations For Internal Combustion Engines (AREA)

Abstract

Thyristor à courts-circuits d'émetteur répartis à la surface de la cathode. Les courts-circuits d'émetteur EK' situés à proximité de la gâchette G sont à une moindre distance a les uns des autres que ceux, EK, situés à la surface de la cathode F, entre les précédents et le bord de la cathode situé à l'opposé de la gâchette. Application en particulier aux thyristors à amplification interne de l'amorçage de manière à repartir uniformément sur leur section totale la résistance à la montée en tension du /dt.
FR7730079A 1976-10-08 1977-10-06 Thyristor a courts-circuits d'emetteur et son application Withdrawn FR2367354A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1277576A CH598696A5 (fr) 1976-10-08 1976-10-08

Publications (1)

Publication Number Publication Date
FR2367354A1 true FR2367354A1 (fr) 1978-05-05

Family

ID=4386273

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7730079A Withdrawn FR2367354A1 (fr) 1976-10-08 1977-10-06 Thyristor a courts-circuits d'emetteur et son application

Country Status (7)

Country Link
US (1) US4150390A (fr)
CH (1) CH598696A5 (fr)
DE (1) DE2648159A1 (fr)
FR (1) FR2367354A1 (fr)
GB (1) GB1542757A (fr)
IT (1) IT1085449B (fr)
NL (1) NL7710952A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2424630A1 (fr) * 1978-04-24 1979-11-23 Gen Electric Thyristor perfectionne et procede de fabrication
FR2428918A1 (fr) * 1978-06-14 1980-01-11 Gen Electric Thyristor a blocage par la gachette perfectionne

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH622127A5 (fr) * 1977-12-21 1981-03-13 Bbc Brown Boveri & Cie
DE2917786C2 (de) * 1979-05-03 1983-07-07 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Thyristortriode und Verfahren zu ihrer Herstellung
DE3017584C2 (de) * 1980-05-08 1982-12-23 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Thyristor
GB2150347B (en) * 1983-11-21 1987-02-25 Westinghouse Brake & Signal Amplifying gate thyristor with zones of different cathode-gate resistance
DE3744308A1 (de) * 1987-12-28 1989-07-06 Bbc Brown Boveri & Cie Leistungshalbleiter-bauelement sowie verfahren zu dessen herstellung
DE19721365A1 (de) * 1997-05-22 1998-11-26 Asea Brown Boveri Beidseitig steuerbarer Thyristor
WO2016016427A1 (fr) * 2014-07-31 2016-02-04 Abb Technology Ag Thyristor à commande de phase

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2029134A1 (fr) * 1969-06-12 1970-12-23
DE2339440A1 (de) * 1972-08-04 1974-02-28 Aei Semiconductors Ltd Verbesserte thyristoren und verfahren zu ihrer herstellung
DE2542901A1 (de) * 1974-09-28 1976-04-08 Westinghouse Brake & Signal Halbleitervorrichtung

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD85815A (fr) *
DE1764821B1 (de) * 1967-08-25 1971-10-14 Mitsubishi Electric Corp In zwei richtungen schaltbarer thyristor
US3476992A (en) * 1967-12-26 1969-11-04 Westinghouse Electric Corp Geometry of shorted-cathode-emitter for low and high power thyristor
DE2329872C3 (de) * 1973-06-12 1979-04-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
US3897286A (en) * 1974-06-21 1975-07-29 Gen Electric Method of aligning edges of emitter and its metalization in a semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2029134A1 (fr) * 1969-06-12 1970-12-23
DE2339440A1 (de) * 1972-08-04 1974-02-28 Aei Semiconductors Ltd Verbesserte thyristoren und verfahren zu ihrer herstellung
DE2542901A1 (de) * 1974-09-28 1976-04-08 Westinghouse Brake & Signal Halbleitervorrichtung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/76 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2424630A1 (fr) * 1978-04-24 1979-11-23 Gen Electric Thyristor perfectionne et procede de fabrication
FR2428918A1 (fr) * 1978-06-14 1980-01-11 Gen Electric Thyristor a blocage par la gachette perfectionne

Also Published As

Publication number Publication date
DE2648159C2 (fr) 1989-09-21
US4150390A (en) 1979-04-17
DE2648159A1 (de) 1978-04-13
GB1542757A (en) 1979-03-21
NL7710952A (nl) 1978-04-11
IT1085449B (it) 1985-05-28
CH598696A5 (fr) 1978-05-12

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Legal Events

Date Code Title Description
ST Notification of lapse