FR2366583B1 - - Google Patents

Info

Publication number
FR2366583B1
FR2366583B1 FR7729037A FR7729037A FR2366583B1 FR 2366583 B1 FR2366583 B1 FR 2366583B1 FR 7729037 A FR7729037 A FR 7729037A FR 7729037 A FR7729037 A FR 7729037A FR 2366583 B1 FR2366583 B1 FR 2366583B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7729037A
Other versions
FR2366583A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2366583A1 publication Critical patent/FR2366583A1/fr
Application granted granted Critical
Publication of FR2366583B1 publication Critical patent/FR2366583B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
FR7729037A 1976-09-30 1977-09-27 Utilisation d'un compose d'oxyde de bismuth comme substance sensible aux rayons x et aux rayons gamma Granted FR2366583A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2644168A DE2644168C3 (de) 1976-09-30 1976-09-30 Verwendung einer kristallinen Wismutoxid-Verbindung der Zusammensetzung Bi↓10↓-14X↓1↓O↓n↓, sowie Vorrichtungen hierzu und Verfahren zu deren Herstellung

Publications (2)

Publication Number Publication Date
FR2366583A1 FR2366583A1 (fr) 1978-04-28
FR2366583B1 true FR2366583B1 (fr) 1981-05-08

Family

ID=5989329

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7729037A Granted FR2366583A1 (fr) 1976-09-30 1977-09-27 Utilisation d'un compose d'oxyde de bismuth comme substance sensible aux rayons x et aux rayons gamma

Country Status (5)

Country Link
US (2) US4227084A (fr)
JP (1) JPS5343531A (fr)
DE (1) DE2644168C3 (fr)
FR (1) FR2366583A1 (fr)
GB (1) GB1551549A (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2415086A1 (fr) * 1978-01-24 1979-08-17 Thomson Csf Materiau polycristallin de formule bi12sio20, procede de fabrication dudit materiau, et dispositif de detection de radiations utilisant ce materiau
JPS563754U (fr) * 1979-06-21 1981-01-13
JPS565549A (en) * 1979-06-27 1981-01-21 Fuji Photo Film Co Ltd Electrophotograhic recording material
DE3116233A1 (de) * 1981-04-23 1982-11-11 Siemens AG, 1000 Berlin und 8000 München "anordnung zum herstellen eines koerperschnittbildes"
JPS5815586A (ja) * 1981-07-22 1983-01-28 Cosmo Co Ltd ビスブレ−カ−タ−ルを原料とするブロ−ンアスフアルトの製造法
JPS5858553A (ja) 1981-10-01 1983-04-07 Fuji Photo Film Co Ltd Ｘ線電子写真感光体およびその製造方法
DE3151155A1 (de) * 1981-12-23 1983-06-30 Siemens AG, 1000 Berlin und 8000 München Roengtenbildwandlungseinrichtung
DE3235076A1 (de) * 1982-09-22 1984-03-22 Siemens AG, 1000 Berlin und 8000 München Aufnahme- und auslesevorrichtung fuer roentgenstrahlen
FR2601499B1 (fr) * 1986-07-08 1988-09-30 Thomson Csf Detecteur d'image a photoconducteur a memoire
EP0407945B1 (fr) * 1989-07-11 1995-01-04 Sony Corporation Méthode et appareillage pour le traitement thermique d'un cristal optique d'oxyde
JP4252918B2 (ja) * 2004-03-24 2009-04-08 富士フイルム株式会社 放射線撮像パネルを構成する光導電層の製造方法
US20060051287A1 (en) * 2004-09-03 2006-03-09 Fuji Photo Film Co., Ltd. Processes for producing Bi12MO20 precursors, Bi12MO20 particles, and photo-conductor layers
JP2006124272A (ja) * 2004-09-28 2006-05-18 Fuji Photo Film Co Ltd 放射線撮像パネルを構成する光導電層の製造方法
JP2006240953A (ja) * 2005-03-07 2006-09-14 Fuji Photo Film Co Ltd Ｂｉ１２ＴｉＯ２０焼結体および光導電層
JP4782445B2 (ja) * 2005-03-09 2011-09-28 富士フイルム株式会社 Ｂｉ１２ＭＯ２０粉体の製造方法および放射線撮像パネルを構成する光導電層
JP2006261203A (ja) * 2005-03-15 2006-09-28 Fuji Photo Film Co Ltd 放射線撮像パネルを構成する光導電層および放射線撮像パネル
JP2006261202A (ja) * 2005-03-15 2006-09-28 Fuji Photo Film Co Ltd 放射線撮像パネルを構成する光導電層および放射線撮像パネル
JP2007005623A (ja) * 2005-06-24 2007-01-11 Fujifilm Holdings Corp 放射線撮像パネルを構成する光導電層および放射線撮像パネル
JP2007012842A (ja) * 2005-06-30 2007-01-18 Fujifilm Holdings Corp 光導電層および放射線撮像パネル
EP2100947A1 (fr) 2008-03-14 2009-09-16 The Procter and Gamble Company Composition détergente de lave-vaisselle automatique
DE102009013301A1 (de) * 2009-03-16 2010-09-30 Siemens Aktiengesellschaft Röntgen- oder Gammadetektorarray
CA2803827C (fr) 2010-07-07 2014-04-08 University Health Network Sonde dosimetrique radiochromique a fibres optiques, et son procede de fabrication

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE814193C (de) * 1950-02-21 1951-09-20 Immanuel Dipl-Ing Dr Broser Verfahren zur Erzielung einer bestimmten Abhaengigkeit zwischen absorbierter Energie und Photostrom an groesseren einheitlichen Kristallen oder kristallinen Schichten aus Chalkogeniden von Zn, Cd, Hg oder einem Gemisch aus diesen
US2862815A (en) * 1953-10-01 1958-12-02 Rca Corp Electrophotographic member
US3507646A (en) * 1965-12-27 1970-04-21 Xerox Corp Electrophotographic process using a single phase photoconductive glass imaging layer
US3470100A (en) * 1966-01-25 1969-09-30 Bell Telephone Labor Inc Growth of piezoelectric bismuth oxide
US3864725A (en) * 1971-03-09 1975-02-04 Innotech Corp Photoconductive junction device employing a glassy amorphous material as an active layer
US3754965A (en) * 1971-04-05 1973-08-28 Varian Associates A method for making an electrophotographic plate
US3830648A (en) * 1971-04-05 1974-08-20 Varian Associates Photoconductor-glass binder plate with insulating resin in pores
US3936397A (en) * 1974-02-01 1976-02-03 Owens-Illinois, Inc. Semiconductive glass-ceramic articles
FR2305743A1 (fr) * 1975-03-25 1976-10-22 Thomson Csf Dispositif de detection de rayons x

Also Published As

Publication number Publication date
DE2644168A1 (de) 1978-04-06
US4254200A (en) 1981-03-03
DE2644168C3 (de) 1981-06-11
JPS6113222B2 (fr) 1986-04-12
US4227084A (en) 1980-10-07
DE2644168B2 (de) 1980-10-02
GB1551549A (en) 1979-08-30
FR2366583A1 (fr) 1978-04-28
JPS5343531A (en) 1978-04-19

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Legal Events

Date Code Title Description
ST Notification of lapse