FR2363900A1 - Electroluminescent monocrystalline gallium nitride semiconductor - with partially compensated layer below fully compensated active layer - Google Patents

Electroluminescent monocrystalline gallium nitride semiconductor - with partially compensated layer below fully compensated active layer

Info

Publication number
FR2363900A1
FR2363900A1 FR7626777A FR7626777A FR2363900A1 FR 2363900 A1 FR2363900 A1 FR 2363900A1 FR 7626777 A FR7626777 A FR 7626777A FR 7626777 A FR7626777 A FR 7626777A FR 2363900 A1 FR2363900 A1 FR 2363900A1
Authority
FR
France
Prior art keywords
layer
impurities
active layer
electroluminescent
compensated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7626777A
Other languages
French (fr)
Other versions
FR2363900B1 (en
Inventor
Guy Jacob
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7626777A priority Critical patent/FR2363900A1/en
Priority to DE19772738329 priority patent/DE2738329A1/en
Priority to GB36725/77A priority patent/GB1589351A/en
Priority to IT27233/77A priority patent/IT1084205B/en
Priority to JP10638577A priority patent/JPS5334486A/en
Publication of FR2363900A1 publication Critical patent/FR2363900A1/en
Priority to US06/012,790 priority patent/US4268842A/en
Application granted granted Critical
Publication of FR2363900B1 publication Critical patent/FR2363900B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

Electroluminescent semiconductor is based on a monocrystalline substrate with an n-GaN layer; an active GaN layer doped with a doping element for the formation of acceptor impurities at least completely compensating the natural donor impurities; a surface electrode in contact with the active layer; and also provision for contacting the n-conductive layer. Improvement is that (part of) the n-conductive layer, which is parallel to and bounds the active layer, is doped for less than complete compensation of these doping elements, the net concn. of the resultant impurities is small (pref. of the order of tenths to millionths) w.r.t. the concn. of natural impurities and these are almost homogeneous in the stated part of the layer. The net concn. in the material can be varied during epitaxial growth and more accurate and easily control is possible.
FR7626777A 1976-09-06 1976-09-06 Electroluminescent monocrystalline gallium nitride semiconductor - with partially compensated layer below fully compensated active layer Granted FR2363900A1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7626777A FR2363900A1 (en) 1976-09-06 1976-09-06 Electroluminescent monocrystalline gallium nitride semiconductor - with partially compensated layer below fully compensated active layer
DE19772738329 DE2738329A1 (en) 1976-09-06 1977-08-25 ELECTROLUMINESCENT GALLIUM NITRIDE SEMI-CONDUCTOR ARRANGEMENT AND METHOD OF MANUFACTURING IT
GB36725/77A GB1589351A (en) 1976-09-06 1977-09-02 Electroluminescent device manufacture
IT27233/77A IT1084205B (en) 1976-09-06 1977-09-02 SEMI-CONDUCTIVE ELECTRO-LUMINESCENT GALLIO NITRIDE DEVICE AND MANUFACTURING METHOD OF THE SAME.
JP10638577A JPS5334486A (en) 1976-09-06 1977-09-06 Light emitting gallium semiconductor device and method of producing same
US06/012,790 US4268842A (en) 1976-09-06 1979-02-16 Electroluminescent gallium nitride semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7626777A FR2363900A1 (en) 1976-09-06 1976-09-06 Electroluminescent monocrystalline gallium nitride semiconductor - with partially compensated layer below fully compensated active layer

Publications (2)

Publication Number Publication Date
FR2363900A1 true FR2363900A1 (en) 1978-03-31
FR2363900B1 FR2363900B1 (en) 1980-05-30

Family

ID=9177402

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7626777A Granted FR2363900A1 (en) 1976-09-06 1976-09-06 Electroluminescent monocrystalline gallium nitride semiconductor - with partially compensated layer below fully compensated active layer

Country Status (1)

Country Link
FR (1) FR2363900A1 (en)

Also Published As

Publication number Publication date
FR2363900B1 (en) 1980-05-30

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Legal Events

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CD Change of name or company name
ST Notification of lapse