FR2355314A1 - PROCESS FOR MAKING MASKS FOR X-RAY LITHOGRAPHY - Google Patents
PROCESS FOR MAKING MASKS FOR X-RAY LITHOGRAPHYInfo
- Publication number
- FR2355314A1 FR2355314A1 FR7717507A FR7717507A FR2355314A1 FR 2355314 A1 FR2355314 A1 FR 2355314A1 FR 7717507 A FR7717507 A FR 7717507A FR 7717507 A FR7717507 A FR 7717507A FR 2355314 A1 FR2355314 A1 FR 2355314A1
- Authority
- FR
- France
- Prior art keywords
- support
- mask
- ray lithography
- support base
- making masks
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001015 X-ray lithography Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 abstract 3
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Physical Vapour Deposition (AREA)
Abstract
L'invention concerne un procédé pour réaliser des masques pour la lithographie aux rayons X. Selon ce procédé de fabrication d'un masque formé par un support 2 d'une structure, par une structure opaque aux rayons X et par un cadre extérieur de support, le support 2 de la structure est constitué par un métal ou une matiere plastique et est formé, avec une structure du masque 40, sur une base de support 1 et on attaque ensuite la base de support 1 selon une action sélective en utilisant un revêtement 5 de protection contre l'attaque chimique de manière que seule subsiste la zone marginale de la base de support 1, qui forme le cadre extérieur du masque Application notamment à la réalisation de structures fines de circuits intégrés.The invention relates to a method for producing masks for X-ray lithography. According to this method of manufacturing a mask formed by a support 2 of a structure, by an opaque structure to X-rays and by an outer support frame. , the support 2 of the structure is made of a metal or a plastic material and is formed, with a structure of the mask 40, on a support base 1 and then the support base 1 is attacked in a selective action using a coating 5 for protection against chemical attack so that only the marginal zone of the support base 1, which forms the outer frame of the mask, remains. Application in particular to the production of fine structures of integrated circuits.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19762626851 DE2626851C3 (en) | 1976-06-15 | 1976-06-15 | Process for the production of masks for X-ray lithography |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2355314A1 true FR2355314A1 (en) | 1978-01-13 |
FR2355314B1 FR2355314B1 (en) | 1981-08-14 |
Family
ID=5980611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7717507A Granted FR2355314A1 (en) | 1976-06-15 | 1977-06-08 | PROCESS FOR MAKING MASKS FOR X-RAY LITHOGRAPHY |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS52153673A (en) |
BE (1) | BE855701A (en) |
DE (1) | DE2626851C3 (en) |
FR (1) | FR2355314A1 (en) |
GB (1) | GB1544787A (en) |
IT (1) | IT1083777B (en) |
NL (1) | NL186201C (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4171489A (en) * | 1978-09-13 | 1979-10-16 | Bell Telephone Laboratories, Incorporated | Radiation mask structure |
GB2089524B (en) * | 1980-12-17 | 1984-12-05 | Westinghouse Electric Corp | High resolution lithographic process |
GB2121980B (en) * | 1982-06-10 | 1986-02-05 | Standard Telephones Cables Ltd | X ray masks |
DE3435178A1 (en) * | 1983-09-26 | 1985-04-04 | Canon K.K., Tokio/Tokyo | OBJECT WITH MASK STRUCTURE FOR LITHOGRAPHY |
DE3338717A1 (en) * | 1983-10-25 | 1985-05-02 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR PRODUCING A X-RAY MASK WITH METAL CARRIER FILM |
JPS6169133A (en) * | 1985-05-07 | 1986-04-09 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Exposing process of soft x-ray |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1948141A1 (en) * | 1968-09-23 | 1970-04-23 | Polaroid Corp | Anti-reflective coating for optical element of - transparent plastic |
-
1976
- 1976-06-15 DE DE19762626851 patent/DE2626851C3/en not_active Expired
-
1977
- 1977-05-02 GB GB1836377A patent/GB1544787A/en not_active Expired
- 1977-06-08 FR FR7717507A patent/FR2355314A1/en active Granted
- 1977-06-14 IT IT2465877A patent/IT1083777B/en active
- 1977-06-14 NL NL7706552A patent/NL186201C/en not_active IP Right Cessation
- 1977-06-15 BE BE178453A patent/BE855701A/en not_active IP Right Cessation
- 1977-06-15 JP JP7095277A patent/JPS52153673A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
NL186201C (en) | 1990-10-01 |
DE2626851B2 (en) | 1981-07-02 |
IT1083777B (en) | 1985-05-25 |
BE855701A (en) | 1977-10-03 |
DE2626851C3 (en) | 1982-03-18 |
JPS52153673A (en) | 1977-12-20 |
GB1544787A (en) | 1979-04-25 |
NL7706552A (en) | 1977-12-19 |
DE2626851A1 (en) | 1977-12-22 |
FR2355314B1 (en) | 1981-08-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA2049795A1 (en) | Process for fabricating a device | |
CA2102987A1 (en) | Formation of microstructures using a preformed photoresist sheet | |
US4410611A (en) | Hard and adherent layers from organic resin coatings | |
FR2355314A1 (en) | PROCESS FOR MAKING MASKS FOR X-RAY LITHOGRAPHY | |
JPS57130430A (en) | Pattern formation | |
JPS5656636A (en) | Processing method of fine pattern | |
JPS5242093A (en) | Manufacturing method for electro chromic display element | |
JPS6474547A (en) | Manufacture of semiconductor for compensating strain between pattern on semiconductor body and mask for obtaining pattern | |
Schomburg et al. | Ti-and Be-X-ray masks with alignment windows for the LIGA process | |
US4101782A (en) | Process for making patterns in resist and for making ion absorption masks useful therewith | |
DE2740180C2 (en) | Electron image projection mask and method of making such a mask - US Pat | |
US20050054210A1 (en) | Multiple exposure method for forming patterned photoresist layer | |
JPS57128031A (en) | Exposure mask | |
JPS52119172A (en) | Forming method of fine pattern | |
JPS5623783A (en) | Formation of electrode for semiconductor device | |
KR920015428A (en) | Mask manufacturing method | |
JPS57157247A (en) | Optical exposure mask | |
JPS57103318A (en) | Method for patterning | |
US4368215A (en) | High resolution masking process for minimizing scattering and lateral deflection in collimated ion beams | |
JPH059756A (en) | Etching method | |
JPS63163848A (en) | Resist pattern forming method | |
JPS647552A (en) | Manufacture of complementary mos semiconductor device | |
JPH04174509A (en) | Manufacture of x-ray mask | |
JPS55163841A (en) | Method for electron beam exposure | |
JPS6150152A (en) | Photomask |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |