JPS6169133A - Exposing process of soft x-ray - Google Patents
Exposing process of soft x-rayInfo
- Publication number
- JPS6169133A JPS6169133A JP60095502A JP9550285A JPS6169133A JP S6169133 A JPS6169133 A JP S6169133A JP 60095502 A JP60095502 A JP 60095502A JP 9550285 A JP9550285 A JP 9550285A JP S6169133 A JPS6169133 A JP S6169133A
- Authority
- JP
- Japan
- Prior art keywords
- soft
- masks
- ray
- mask
- exceeding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Abstract
Description
【発明の詳細な説明】
本発明は軟Ｘ線により微細な半導体集積回路装菫を転写
する軟Ｘ線露光方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a soft X-ray exposure method for transferring fine semiconductor integrated circuit devices using soft X-rays.
従来マスク基板材料として、パリレン−Ｎ、ポリイミド
等の有機薄膜を用いマスクの吸収材料として金を用いた
軟Ｘ線露光用マスクが提案されている。又、そのような
マスクはたとえば「第３９回応用物理学会学術講演会講
演予稿集１９７８年第９５頁」に示されているような方
法で製造される。Conventionally, a mask for soft X-ray exposure has been proposed in which an organic thin film such as parylene-N or polyimide is used as a mask substrate material and gold is used as an absorption material of the mask. Further, such a mask is manufactured, for example, by a method as shown in "Proceedings of the 39th Academic Conference of the Japan Society of Applied Physics, 1978, page 95."
即ち、シリコン基板上忙パリレンＮ膜を蒸着によって形
成し、該パリレンＮ膜上にクロム、金。That is, a parylene N film is formed on a silicon substrate by vapor deposition, and chromium and gold are deposited on the parylene N film.
ＰＭＭ・Ａレジストをこの順序に形成し、上記レジスト
をエレクトロンビームにより選択的に除去し、次にリフ
トオフによりクロム膜を形成し、該クロム膜をマスクと
してイオンエツチングにより上記金をイオンエツチング
する。そして、上記シリコン基板を化学エツチングによ
るバックエツチングにより支持台部分を残して除去する
。という方法である。A PMM-A resist is formed in this order, the resist is selectively removed by an electron beam, a chromium film is formed by lift-off, and the gold is ion-etched using the chromium film as a mask. Then, the silicon substrate is removed by back-etching using chemical etching, leaving only the support portion. This is the method.
しかし乍ら、上記した従来技術には次のような欠点があ
る。１）金は高価な材料であるため高価格のマスクとな
る。２）金等の軟金属の微細パターン形成は、リフト・
オフの技術によらねば形成できず、リフトオフ特有のパ
リ不良をさけることはできない。However, the above-mentioned conventional technology has the following drawbacks. 1) Gold is an expensive material, resulting in an expensive mask. 2) Formation of fine patterns on soft metals such as gold requires lift and
It cannot be formed without using a lift-off technique, and it is impossible to avoid the flaking defects peculiar to lift-off.
本発明の目的はマスクの吸収材として金と同穆度のある
いはそれ以上の吸収能を有しかつ容易に微細加工が可能
な軟Ｘ線露光技術を提供することである。An object of the present invention is to provide a soft X-ray exposure technique that has an absorbing ability equal to or higher than that of gold as an absorbing material for a mask, and allows easy microfabrication.
次に本発明の一実施例を第１図及び第２図（ａ）乃至（
ｄ）をもとに説明する。Next, one embodiment of the present invention is shown in FIGS. 1 and 2 (a) to (
The explanation will be based on d).
まず、第１図に本発明に従った軟Ｘ線用マスク２０の構
造を示す。同図に示すよ５Ｋ、有機薄膜であるパリレン
薄膜から成る基板１１の一主面上にシリコン膜１５が選
択的に形成されており、かつ上記基［１１の他の主面の
周辺部にはシリコン材１６が形成されている。このシリ
コン材１６はマスク２０を支持するだめの支持体である
。First, FIG. 1 shows the structure of a soft X-ray mask 20 according to the present invention. As shown in the figure, a silicon film 15 is selectively formed on one main surface of a substrate 11 made of a parylene thin film, which is an organic thin film, and a silicon film 15 is selectively formed on the periphery of the other main surface of the substrate 11. A silicon material 16 is formed. This silicone material 16 is a support for supporting the mask 20.
次に上記したマスク２００裂造法を第２図（ａｌ乃至（
ｄｌをもとに説明する。Next, the above-mentioned mask 200 tearing method is shown in Fig. 2 (al to (
The explanation will be based on dl.
まず同図（ａｌに示すようにシリコンウェハかもなる基
体１０上に２μｍ程度の厚さのパリレン膜１１を蒸着あ
るいは塗布法で形成し、その上に０．２μｍ程度の多結
晶又はアモルファスのシリコン膜１２を蒸着等により形
成し、その上忙厚さ約０．４μｍのレジスト１３（例え
ばＰＭＭＡレジスト）を塗布する。次に（ｂ）のように
上記レジスト１３を露光して選択的に除去し所望パター
ンのレジスト１４に形成する。そして（ｃｌのように上
記レジストパタｌ −ン１４７にマスク、と
じて、シリコン膜１２をＣＦ４プラズマエツチング等に
よりエツチングし所望パターンのシリコン膜１５に形成
する。次に（ｄｌのようｌｃシリコンウェハ１（１’ｉ
面から上記パリレン膜１１の裏面が露出するまでエツチ
ングする。その時、シリコンウェハ１０の一部１６が残
るように選択的にエツチングする。First, as shown in the same figure (al), a parylene film 11 with a thickness of about 2 μm is formed by vapor deposition or coating on a substrate 10, which may also be a silicon wafer, and then a polycrystalline or amorphous silicon film with a thickness of about 0.2 μm is formed on top of the parylene film 11, which has a thickness of about 2 μm. 12 is formed by vapor deposition or the like, and a resist 13 (for example, PMMA resist) having a thickness of about 0.4 μm is applied thereon.Then, as shown in (b), the resist 13 is exposed to light and selectively removed to form a desired pattern. The silicon film 12 is etched by CF4 plasma etching or the like using a mask on the resist pattern 147 as shown in (cl) to form a desired pattern on the silicon film 15.Next, ( lc silicon wafer 1 (1'i
Etching is performed from the front surface until the back surface of the parylene film 11 is exposed. At that time, the silicon wafer 10 is selectively etched so that a portion 16 remains.
上記のよう圧して得られた軟Ｘ線用マスクは、その吸収
能は特！ＩｃＸ＃波長が、５０＾〜１０ｏ′Ａ程度のと
き、金と同程度あるいはそれ以上であり従来のように金
を吸収材とした場合と同程度あるいはそれ以上の吸収効
果となる。又、シリコンは金よりも安価な材料であるた
め低価格のマスクとなる。さらにプラズマエッチ等のエ
ツチング法により容易に微細加工でき、かつリフトオフ
法によるパリ不良をさけることができる。さらに、本発
明においては吸収材にシリコンを用いるため通、常−５
，般に行なわれているイリコンーウエハ加工技術に屓応
した方法により容易に軟Ｘ線用マスクを螺進することが
できる等の種々の効果がある。The soft X-ray mask obtained by pressing as described above has a special absorption ability! When the IcX# wavelength is about 50^ to 10o'A, the absorption effect is comparable to or greater than that of gold, and the absorption effect is equal to or greater than that of the conventional case where gold is used as an absorbing material. Additionally, silicon is a cheaper material than gold, making it a low-cost mask. Furthermore, fine processing can be easily performed by etching methods such as plasma etching, and it is possible to avoid chipping defects caused by lift-off methods. Furthermore, in the present invention, since silicon is used as the absorbent material, it is usually -5
This method has various effects such as being able to easily thread a soft X-ray mask using a method that is compatible with commonly used silicon wafer processing technology.
本発明は上記した一実施例〈限定されず１例えば、シリ
コンクエバ１０のかわりに一般の平坦な表面を有する支
持部材を用いることもできるが、シリコンウェハを用い
た方が１通常の半導体集積回路装置製造技術に適用でき
るので望ましい。さらに、パリレン膜１１のかわりにポ
リイミド、マイラー等の有機薄膜でも良い。また、所望
パターンのレジスト１４なマスクとしてシリコン膜１２
をエツチングするとき、プラズマエッチする代りに上記
レジスト１４をマスクとして所定のエツチング液により
エツチングしても良い。The present invention is based on the above-described embodiment (not limited to 1).For example, instead of the silicon cube 10, a general support member having a flat surface can be used, but it is better to use a silicon wafer (1) for a normal semiconductor integrated circuit device. This is desirable because it can be applied to manufacturing technology. Further, instead of the parylene film 11, an organic thin film such as polyimide or Mylar may be used. In addition, a silicon film 12 is used as a mask for resist 14 of a desired pattern.
When etching, instead of plasma etching, etching may be performed using a predetermined etching solution using the resist 14 as a mask.
本発明により構成されるマスクは、数１０＾以上の波長
を有するＸ線を使用するとき、最も有効となる。The mask constructed according to the present invention is most effective when using X-rays having a wavelength of several tens of degrees or more.
第１図は本発明の一実施例に供する軟Ｘ線用マスクの断
面図、第２図（ａ）乃至（ｄ）は本発明の一実施例に供
する軟Ｘ線用マスクの製造法を示す工程断面図を示す。
１０．１６・・・基体、１１・・・パリレン薄膜、１２
゜１５・・・シリコン膜、１３．１４・・・レジスト、
２゜・・・マスク。FIG. 1 is a sectional view of a soft X-ray mask used in an embodiment of the present invention, and FIGS. 2(a) to 2(d) show a method of manufacturing a soft X-ray mask used in an embodiment of the present invention. A cross-sectional view of the process is shown. 10.16...Substrate, 11...Parylene thin film, 12
゜15...Silicon film, 13.14...Resist,
2゜...Mask.
Claims (1)
ｉに対する軟Ｘ線の吸収率の高い波長領域を用いてパタ
ーンの転写を行なうことを特徴とする軟Ｘ線露光方法。1. By using a mask pattern made essentially of Si, S
A soft X-ray exposure method characterized in that a pattern is transferred using a wavelength range in which soft X-ray absorption is high for i.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60095502A JPS6169133A (en) | 1985-05-07 | 1985-05-07 | Exposing process of soft x-ray |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60095502A JPS6169133A (en) | 1985-05-07 | 1985-05-07 | Exposing process of soft x-ray |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP925879A Division JPS55102232A (en) | 1979-01-31 | 1979-01-31 | Soft x-rays mask and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6169133A true JPS6169133A (en) | 1986-04-09 |
Family
ID=14139370
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60095502A Pending JPS6169133A (en) | 1985-05-07 | 1985-05-07 | Exposing process of soft x-ray |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6169133A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08331930A (en) * | 1996-07-11 | 1996-12-17 | Iseki & Co Ltd | Walking-type rice transplanter equipped with fertilizing device |
| JP2007053147A (en) * | 2005-08-16 | 2007-03-01 | Sony Corp | Organic semiconductor device and its manufacturing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52153673A (en) * | 1976-06-15 | 1977-12-20 | Siemens Ag | Method of manufacturing mask for xxray lithography |
| JPS5312274A (en) * | 1976-07-21 | 1978-02-03 | Oki Electric Ind Co Ltd | Production of mask for x-ray exposure |
-
1985
- 1985-05-07 JP JP60095502A patent/JPS6169133A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52153673A (en) * | 1976-06-15 | 1977-12-20 | Siemens Ag | Method of manufacturing mask for xxray lithography |
| JPS5312274A (en) * | 1976-07-21 | 1978-02-03 | Oki Electric Ind Co Ltd | Production of mask for x-ray exposure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08331930A (en) * | 1996-07-11 | 1996-12-17 | Iseki & Co Ltd | Walking-type rice transplanter equipped with fertilizing device |
| JP2007053147A (en) * | 2005-08-16 | 2007-03-01 | Sony Corp | Organic semiconductor device and its manufacturing method |
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