JPS595628A - Membrane-mask - Google Patents
Membrane-maskInfo
- Publication number
- JPS595628A JPS595628A JP57114968A JP11496882A JPS595628A JP S595628 A JPS595628 A JP S595628A JP 57114968 A JP57114968 A JP 57114968A JP 11496882 A JP11496882 A JP 11496882A JP S595628 A JPS595628 A JP S595628A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- film
- membrane
- ray
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010453 quartz Substances 0.000 claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 150000002484 inorganic compounds Chemical class 0.000 claims abstract description 4
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 4
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 4
- 238000010521 absorption reaction Methods 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 11
- 239000012528 membrane Substances 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 5
- 241001428214 Polyides Species 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 7
- 238000005530 etching Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 238000000206 photolithography Methods 0.000 abstract description 4
- 229920001721 polyimide Polymers 0.000 abstract description 4
- 238000002834 transmittance Methods 0.000 abstract description 4
- 238000004528 spin coating Methods 0.000 abstract description 3
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 2
- 238000001039 wet etching Methods 0.000 abstract description 2
- 229910003082 TiO2-SiO2 Inorganic materials 0.000 abstract 3
- 150000004703 alkoxides Chemical class 0.000 abstract 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、メンプラン・マスクに関する。特にＸ線露光
用メンプラン・マスクにおいて有効である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a Menplan mask. It is particularly effective for menplan masks for X-ray exposure.
従来、Ｘ線露光用メンプラン・マスクとしてはポロンが
ドープされたシリコン膜とＳｉ３Ｎ４膜の２層からなる
メンプラン・マスクが用いられていた。Conventionally, as a Menplan mask for X-ray exposure, a Menplan mask consisting of two layers, a silicon film doped with poron and a Si3N4 film, has been used.
シリコンと窒化シリコンからなるメンプラン・マスクは
、機械的強度が弱く実用上薄くすることに限界があり、
マスク基板が可視光線を通さなくなシ、光学的アライメ
ントができないという欠点があった。またシリコンおよ
び窒化シリコンは熱膨張係数が大きく、温度に対するマ
スクの寸法変化のため、半導体デバイス製造におけるウ
ェハ全面でのマスクレベル間重ね合せ精度が悪いという
欠点があった。Menplan masks made of silicon and silicon nitride have weak mechanical strength, and there are limits to how thin they can be made in practical terms.
The drawback is that the mask substrate does not allow visible light to pass through, making it impossible to perform optical alignment. Furthermore, silicon and silicon nitride have a large coefficient of thermal expansion, and due to the dimensional change of the mask with respect to temperature, there has been a drawback that the overlay accuracy between mask levels over the entire surface of a wafer in semiconductor device manufacturing is poor.
本発明のメンブランΦマスクはかかる従来の欠点をなく
するために、機械的強度を持つ有機化合物を、熱膨張係
数の小さい無機化合物でサンドイッチ状に覆うことを特
徴としている。本発明の目的とするところは、機械的な
強度を持ち、熱膨張が小さく、シかも、可視光線及びＸ
線の透過率の高いメンプラン・マスクを提供することに
ある。In order to eliminate such conventional drawbacks, the membrane Φ mask of the present invention is characterized in that an organic compound having mechanical strength is covered in a sandwich-like manner with an inorganic compound having a small coefficient of thermal expansion. The object of the present invention is to have mechanical strength, low thermal expansion, resistance to visible light and X-rays.
The object of the present invention is to provide a menplan mask with high ray transmittance.
以下、実施例を用いて詳細に説明する。Hereinafter, a detailed explanation will be given using examples.
第１図は従来のＸ線露光用マスクの断面図である。FIG. 1 is a sectional view of a conventional X-ray exposure mask.
シリコン３の枠の上に、ボロンがドープされたシリコン
層２と窒化シリコン膜１を形成し、窒化シリコン１上に
Ａｕパターンを形成してなるＸ線露光用マスクである。This is an X-ray exposure mask in which a silicon layer 2 doped with boron and a silicon nitride film 1 are formed on a frame of silicon 3, and an Au pattern is formed on the silicon nitride 1.
この場合窒化シリコン及びボロンがドープされたシリコ
ンの機械強度が小さく、大口径メンブレン・マスクが作
れない。また実用的な強度を達成するためにメンブレン
・マスクが２μｍ以上の厚さになり、マスク基板の可視
光線透過率が小さくなシ、光学的アライメントができな
い。さらＫＸ線の照射及び周囲の温度影響によシマスフ
の温度分布が均一でなくなり、メンブレン・マスクとマ
スク周辺の枠が熱膨張係数の大きいシリコンと窒化シリ
コンで作成されているため、熱膨張からマスクの寸法が
変化し、半導体デバイス製造におけるウェハ全面でのマ
スクレベル間重ね合せ精度が悪くなる。In this case, silicon nitride and boron-doped silicon have low mechanical strength, making it impossible to fabricate a large-diameter membrane mask. Furthermore, in order to achieve practical strength, the membrane mask has to have a thickness of 2 μm or more, and the visible light transmittance of the mask substrate is low, making optical alignment impossible. In addition, the temperature distribution of the mask mask becomes uneven due to KX-ray irradiation and the influence of ambient temperature, and because the membrane mask and the frame around the mask are made of silicon and silicon nitride, which have large coefficients of thermal expansion, the mask is affected by thermal expansion. As a result, the overlay accuracy between mask levels across the entire wafer surface during semiconductor device manufacturing deteriorates.
本発明は、これらの従来のメンブレンマスクの欠点を除
去したメンブレンマスクを与える。第８図は、本発明に
よる厚い石英枠には、Ｔｈｏ、−５ｉｏ。The present invention provides a membrane mask that eliminates these drawbacks of conventional membrane masks. FIG. 8 shows that the thick quartz frame according to the present invention has Tho, -5io.
薄膜ＶＣ４１われたポリイミド薄膜が貼付された、Ｘ線
露光用メンプランマスクであシ、第２図から第８図は本
発明によるメンプランマスクの製造方法である。第２図
において、円形の石英基板５に、ＣＶＤ法により多結晶
シリコン膜管形成する。フォトリソグラフィとエツチン
グ工程によシ基板周辺の多結晶シリコンを除去する（第
３図〕。第４図ではスピン・コーティングによジアルコ
キシド法で合成したＴｉｏ！−ｓｈｏ、膜７を形成する
。この時石英基板とＴｉｏ、−５ｉｏ、は完全に付着す
る。第５図では、スピン争コーティングによシポリイミ
ド膜８を形成後、スピン・コーティングにより ’ｒ７
ｕ。This is a Menplan mask for X-ray exposure to which a polyimide thin film coated with VC41 is attached. FIGS. 2 to 8 show a method of manufacturing a Menplan mask according to the present invention. In FIG. 2, a polycrystalline silicon film tube is formed on a circular quartz substrate 5 by the CVD method. The polycrystalline silicon around the substrate is removed by photolithography and etching steps (Fig. 3). In Fig. 4, a Tio!-sho film 7 synthesized by the dialkoxide method is formed by spin coating. When the quartz substrate and Tio, -5io are completely adhered to each other, in FIG.
u.
−５ｈｏ２膜９を形成している。-5ho2 film 9 is formed.
第６図では、Ｘ線吸収のＡｍパターン川を形成する。第
７図では、フォトリングラフィとエツチング工程によシ
周辺の石英枠を除く、裏面の石英基板中央を除去する。In FIG. 6, an Am pattern river of X-ray absorption is formed. In FIG. 7, the center of the quartz substrate on the back surface is removed except for the quartz frame around the edge by photolithography and etching steps.
最後に、多結晶シリコンをウェット轡エツチング忙よシ
除去し、本発明によるＴｔ’ｈ −町ｏｚＭにサンドイ
ンチ状に覆われたポリイド膜が厚い石英枠に貼付された
Ｘａ露光用メンブレンマスクができる。本発明によるメ
ンプランマスクはポリイミドを基本に用いているため機
械的強度が高くメンプラン・マスク従来より薄くするこ
とができ可視光線の透過率が大きくなシ、光学的アライ
メントが可能忙なる。またメンプランマスクの第一層及
び第３層忙熱膨張係数の小さいＴｈｏ、 ｓｈｏ、膜
を用い、マスクの周辺も熱膨張の小さい厚い石英で囲っ
ているため、温度九対するマスクの寸法変化は小さく半
導体デバイス製造では、ウェハ全面でのマスクレベル間
重わ合わせ精度が向上する。Finally, the polycrystalline silicon is removed by wet etching to produce a membrane mask for Xa exposure in which a polyide film covered in a sand inch shape is attached to a thick quartz frame according to the present invention. . Since the Menplan mask according to the present invention uses polyimide as a base, it has high mechanical strength, can be made thinner than conventional Menplan masks, has a high transmittance of visible light, and is capable of optical alignment. In addition, since the first and third layers of the Menplan mask are made of films with small coefficients of thermal expansion, and the periphery of the mask is also surrounded by thick quartz with small thermal expansion, the dimensional change of the mask with respect to temperature is small. In manufacturing small semiconductor devices, the accuracy of overlapping mask levels across the entire wafer is improved.
以上説明したように、本発明は、機械的強度が高く、高
精度の光学的アライメントを可能にするメンプランマス
クを提供する。As described above, the present invention provides a membrane mask that has high mechanical strength and enables highly accurate optical alignment.
第１図・・従来のＸ線露光用マスク
第２図〜第８図・・本発明によるＸ線露光用マスクとそ
の製造方法
１・・窒化シリコン ２・・ボロンドープしたシリコン
３會・シリコン ４・ΦＡｎ ５・・石英 ６０．
多結晶シリコン ７・ｅ Ｔｉｔ）、 −８７（１１８
・Φポリイミド ９・ ・ＴｉＮ鵞−８ｚｏ、 Ｉｌｌ
ｅ ｅ Ａ）Ｌ以 上
出願人 株式会社篩訪精工舎Figure 1: Conventional X-ray exposure mask Figures 2 to 8: X-ray exposure mask according to the present invention and its manufacturing method 1. Silicon nitride 2. Boron-doped silicon 3. Silicon 4. ΦAn 5...Quartz 60.
Polycrystalline silicon 7・e Tit), -87 (118
・ΦPolyimide 9・ ・TiN-8zo, Ill
e e A) L or above Applicant Shihiwa Seikosha Co., Ltd.
Claims (1)
イッチ状に覆われることを特徴とするメンプラン・マス
ク。 １２１第１層忙は、ｓｈｏ、膜またはＴｉｏ、 、
ｓｈｏ、が形成され、第２層には、ポリイド膜が形成さ
れ、第３層には＋Ｂｏ 、膜またはＴｏｏ 、 −８７
０、膜が形成され、第４層には金属の吸収パターンを形
成することを特徴とする特許請求の範囲第一項記載のメ
ンブレン・マスク。 （３１厚い石英枠１ｃＦｉ、無機化合物の薄膜にサンド
イッチ状に覆われた有機化合物の薄膜が貼付されること
を特徴とする特許請求の範囲第一項記載のメンプラン・
マスク。[Claims] A menplan mask characterized in that a thin film of an organic compound is covered in a sandwich-like manner with a thin film of an inorganic compound. 121 The first layer is sho, membrane or Tio, ,
sho, is formed, the second layer is a polyide film, and the third layer is +Bo, film or Too, -87
0. The membrane mask according to claim 1, wherein a film is formed, and a metal absorption pattern is formed in the fourth layer. (31 thick quartz frame 1cFi, the membrane plan according to claim 1, characterized in that a thin film of an organic compound covered in a sandwich-like manner is attached to a thin film of an inorganic compound)
mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57114968A JPS595628A (en) | 1982-07-02 | 1982-07-02 | Membrane-mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57114968A JPS595628A (en) | 1982-07-02 | 1982-07-02 | Membrane-mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS595628A true JPS595628A (en) | 1984-01-12 |
Family
ID=14651084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57114968A Pending JPS595628A (en) | 1982-07-02 | 1982-07-02 | Membrane-mask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS595628A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6135449A (en) * | 1984-07-07 | 1986-02-19 | テレフンケン・エレクトロニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | Mask for roentgen lithography |
| JPH01162332A (en) * | 1987-12-18 | 1989-06-26 | Sharp Corp | Mask membrane for x-ray lithography |
| JPH0319313A (en) * | 1989-05-26 | 1991-01-28 | American Teleph & Telegr Co <Att> | Manufacture of exposure mask |
-
1982
- 1982-07-02 JP JP57114968A patent/JPS595628A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6135449A (en) * | 1984-07-07 | 1986-02-19 | テレフンケン・エレクトロニク・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | Mask for roentgen lithography |
| JPH01162332A (en) * | 1987-12-18 | 1989-06-26 | Sharp Corp | Mask membrane for x-ray lithography |
| JPH0583171B2 (en) * | 1987-12-18 | 1993-11-25 | Sharp Kk | |
| JPH0319313A (en) * | 1989-05-26 | 1991-01-28 | American Teleph & Telegr Co <Att> | Manufacture of exposure mask |
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