FR2354637A1 - OPTOELECTRONIC DEVICE EQUIPPED WITH LIGHT PROPAGATION CONTROL MEANS, AND THEIR MANUFACTURING PROCESS - Google Patents
OPTOELECTRONIC DEVICE EQUIPPED WITH LIGHT PROPAGATION CONTROL MEANS, AND THEIR MANUFACTURING PROCESSInfo
- Publication number
- FR2354637A1 FR2354637A1 FR7717285A FR7717285A FR2354637A1 FR 2354637 A1 FR2354637 A1 FR 2354637A1 FR 7717285 A FR7717285 A FR 7717285A FR 7717285 A FR7717285 A FR 7717285A FR 2354637 A1 FR2354637 A1 FR 2354637A1
- Authority
- FR
- France
- Prior art keywords
- control means
- light propagation
- propagation control
- manufacturing process
- device equipped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005693 optoelectronics Effects 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000004888 barrier function Effects 0.000 abstract 2
- 230000000712 assembly Effects 0.000 abstract 1
- 238000000429 assembly Methods 0.000 abstract 1
- 230000001902 propagating effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Photovoltaic Devices (AREA)
- Optical Integrated Circuits (AREA)
Abstract
La présente invention concerne des dispositifs optoélectroniques munis de moyens de commande de propagation lumineuse. Dans un dispositif optoélectonique, la lumière est empêchée de se propager dans une ou deux couches de confinement 21 et 23 de part et d'autre d'une couche active 22 en formant une ou plusieurs barrières absorbant les photons dans l'une ou les deux couches de confinement Une barrière absorbant les photons 26, 27, 30 peut être formée par bombardement protonique. Application par exemple à des ensembles monolithiques : diode photoémettrice-modulateur électrooptique.The present invention relates to optoelectronic devices provided with light propagation control means. In an optoelectonic device, light is prevented from propagating in one or two confinement layers 21 and 23 on either side of an active layer 22 by forming one or more barriers absorbing photons in one or both. containment layers A barrier absorbing photons 26, 27, 30 can be formed by proton bombardment. Application for example to monolithic assemblies: electro-optical light emitting-modulator diode.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA254,255A CA1056043A (en) | 1976-06-07 | 1976-06-07 | Optoelectronic devices with control of light propagation |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2354637A1 true FR2354637A1 (en) | 1978-01-06 |
Family
ID=4106155
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7717285A Withdrawn FR2354637A1 (en) | 1976-06-07 | 1977-06-06 | OPTOELECTRONIC DEVICE EQUIPPED WITH LIGHT PROPAGATION CONTROL MEANS, AND THEIR MANUFACTURING PROCESS |
Country Status (9)
Country | Link |
---|---|
JP (1) | JPS5319843A (en) |
CA (1) | CA1056043A (en) |
DE (1) | DE2716749A1 (en) |
ES (1) | ES459549A1 (en) |
FR (1) | FR2354637A1 (en) |
GB (1) | GB1578638A (en) |
IT (1) | IT1076300B (en) |
NL (1) | NL7703509A (en) |
SE (1) | SE7706624L (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5845736U (en) * | 1981-09-21 | 1983-03-28 | 不動建設株式会社 | Hollow pipes for creating sand piles, etc. |
JPS58164814A (en) * | 1982-03-25 | 1983-09-29 | Fudo Constr Co Ltd | Sand pile formation work |
JPS5845737U (en) * | 1981-09-22 | 1983-03-28 | 不動建設株式会社 | Hollow pipes for creating sand piles, etc. |
JPS59203117A (en) * | 1983-05-02 | 1984-11-17 | Fudo Constr Co Ltd | Method and apparatus for improvement of soft ground |
-
1976
- 1976-06-07 CA CA254,255A patent/CA1056043A/en not_active Expired
-
1977
- 1977-03-18 GB GB11617/77A patent/GB1578638A/en not_active Expired
- 1977-03-31 IT IT21941/77A patent/IT1076300B/en active
- 1977-03-31 NL NL7703509A patent/NL7703509A/en not_active Application Discontinuation
- 1977-04-15 DE DE19772716749 patent/DE2716749A1/en active Pending
- 1977-05-19 JP JP5715777A patent/JPS5319843A/en active Pending
- 1977-06-06 FR FR7717285A patent/FR2354637A1/en not_active Withdrawn
- 1977-06-07 ES ES459549A patent/ES459549A1/en not_active Expired
- 1977-06-07 SE SE7706624A patent/SE7706624L/en unknown
Also Published As
Publication number | Publication date |
---|---|
GB1578638A (en) | 1980-11-05 |
NL7703509A (en) | 1977-12-09 |
DE2716749A1 (en) | 1977-12-15 |
SE7706624L (en) | 1977-12-08 |
JPS5319843A (en) | 1978-02-23 |
IT1076300B (en) | 1985-04-27 |
ES459549A1 (en) | 1978-11-16 |
CA1056043A (en) | 1979-06-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |