FR2351504B1 - - Google Patents

Info

Publication number
FR2351504B1
FR2351504B1 FR7614163A FR7614163A FR2351504B1 FR 2351504 B1 FR2351504 B1 FR 2351504B1 FR 7614163 A FR7614163 A FR 7614163A FR 7614163 A FR7614163 A FR 7614163A FR 2351504 B1 FR2351504 B1 FR 2351504B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7614163A
Other languages
French (fr)
Other versions
FR2351504A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7614163A priority Critical patent/FR2351504A1/fr
Priority to GB19413/77A priority patent/GB1545425A/en
Priority to CA278,081A priority patent/CA1089571A/en
Priority to JP5419777A priority patent/JPS52137280A/ja
Priority to DE19772721114 priority patent/DE2721114A1/de
Publication of FR2351504A1 publication Critical patent/FR2351504A1/fr
Priority to US06/020,501 priority patent/US4206468A/en
Application granted granted Critical
Publication of FR2351504B1 publication Critical patent/FR2351504B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
FR7614163A 1976-05-11 1976-05-11 Nouveau dispositif de prise de contact sur un ensemble semi-conducteur Granted FR2351504A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR7614163A FR2351504A1 (fr) 1976-05-11 1976-05-11 Nouveau dispositif de prise de contact sur un ensemble semi-conducteur
GB19413/77A GB1545425A (en) 1976-05-11 1977-05-09 Contacting structure on a semiconductor arrangement
CA278,081A CA1089571A (en) 1976-05-11 1977-05-10 Contacting structure on a semiconductor arrangement
JP5419777A JPS52137280A (en) 1976-05-11 1977-05-11 Contacting structure on semiconductor array
DE19772721114 DE2721114A1 (de) 1976-05-11 1977-05-11 Halbleiterbauelement
US06/020,501 US4206468A (en) 1976-05-11 1979-03-14 Contacting structure on a semiconductor arrangement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7614163A FR2351504A1 (fr) 1976-05-11 1976-05-11 Nouveau dispositif de prise de contact sur un ensemble semi-conducteur

Publications (2)

Publication Number Publication Date
FR2351504A1 FR2351504A1 (fr) 1977-12-09
FR2351504B1 true FR2351504B1 (ja) 1980-04-18

Family

ID=9172979

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7614163A Granted FR2351504A1 (fr) 1976-05-11 1976-05-11 Nouveau dispositif de prise de contact sur un ensemble semi-conducteur

Country Status (5)

Country Link
JP (1) JPS52137280A (ja)
CA (1) CA1089571A (ja)
DE (1) DE2721114A1 (ja)
FR (1) FR2351504A1 (ja)
GB (1) GB1545425A (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4182995A (en) * 1978-03-16 1980-01-08 Rca Corporation Laser diode with thermal conducting, current confining film
DE2856507A1 (de) * 1978-12-28 1980-07-17 Amann Markus Christian Dipl In Halbleiter-laserdiode
JPS5591890A (en) * 1978-12-28 1980-07-11 Fujitsu Ltd Photodiode
JPS55153385A (en) * 1979-05-18 1980-11-29 Nippon Telegr & Teleph Corp <Ntt> Current squeezing type semiconductor device
JPS5621387A (en) * 1979-07-31 1981-02-27 Fujitsu Ltd Semiconductor luminescent device
DE3332398A1 (de) * 1983-09-08 1985-03-28 Standard Elektrik Lorenz Ag, 7000 Stuttgart Multimodenlaser
CN116978999B (zh) * 2023-09-22 2024-01-02 南昌凯捷半导体科技有限公司 一种电流限域Micro-LED芯片及其制作方法

Also Published As

Publication number Publication date
JPS52137280A (en) 1977-11-16
CA1089571A (en) 1980-11-11
FR2351504A1 (fr) 1977-12-09
DE2721114A1 (de) 1977-11-24
GB1545425A (en) 1979-05-10

Similar Documents

Publication Publication Date Title
FR2351504B1 (ja)
JPS5617484Y2 (ja)
JPS5348931U (ja)
JPS52108677U (ja)
JPS52115659U (ja)
JPS574944Y2 (ja)
JPS5324753Y2 (ja)
JPS52130576U (ja)
JPS5346132U (ja)
JPS5360712U (ja)
CS177766B1 (ja)
CS177750B1 (ja)
CS177445B1 (ja)
CS175522B1 (ja)
CS175512B1 (ja)
JPS52160371U (ja)
JPS53684U (ja)
JPS52128250U (ja)
CH604053A5 (ja)
DD125291A1 (ja)
CH606524A5 (ja)
CH606019A5 (ja)
CH611118A5 (ja)
CH609959A5 (ja)
CH602263A5 (ja)

Legal Events

Date Code Title Description
ST Notification of lapse