FR2345787A1 - Memoire inalterable perfectionnee - Google Patents

Memoire inalterable perfectionnee

Info

Publication number
FR2345787A1
FR2345787A1 FR7708555A FR7708555A FR2345787A1 FR 2345787 A1 FR2345787 A1 FR 2345787A1 FR 7708555 A FR7708555 A FR 7708555A FR 7708555 A FR7708555 A FR 7708555A FR 2345787 A1 FR2345787 A1 FR 2345787A1
Authority
FR
France
Prior art keywords
perfected
unalterable memory
unalterable
memory
perfected unalterable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7708555A
Other languages
English (en)
French (fr)
Other versions
FR2345787B1 (en, 2012
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2345787A1 publication Critical patent/FR2345787A1/fr
Application granted granted Critical
Publication of FR2345787B1 publication Critical patent/FR2345787B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
FR7708555A 1976-03-22 1977-03-22 Memoire inalterable perfectionnee Granted FR2345787A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/668,909 US4044341A (en) 1976-03-22 1976-03-22 Memory array

Publications (2)

Publication Number Publication Date
FR2345787A1 true FR2345787A1 (fr) 1977-10-21
FR2345787B1 FR2345787B1 (en, 2012) 1983-03-25

Family

ID=24684250

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7708555A Granted FR2345787A1 (fr) 1976-03-22 1977-03-22 Memoire inalterable perfectionnee

Country Status (7)

Country Link
US (1) US4044341A (en, 2012)
JP (1) JPS52119035A (en, 2012)
DE (1) DE2712537A1 (en, 2012)
FR (1) FR2345787A1 (en, 2012)
GB (1) GB1567508A (en, 2012)
IT (1) IT1076627B (en, 2012)
SE (1) SE408602B (en, 2012)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53134337A (en) * 1977-03-25 1978-11-22 Hitachi Ltd Sense circuit
JPS5817997B2 (ja) * 1978-03-31 1983-04-11 株式会社日立製作所 メモリシステム
US4208730A (en) * 1978-08-07 1980-06-17 Rca Corporation Precharge circuit for memory array
DE2926094A1 (de) * 1979-06-28 1981-01-08 Ibm Deutschland Verfahren und schaltungsanordnung zum entladen von bitleitungskapazitaeten eines integrierten halbleiterspeichers
JPS5621420A (en) * 1979-07-30 1981-02-27 Nec Corp Programmable logic array
US4308595A (en) * 1979-12-19 1981-12-29 International Business Machines Corporation Array driver
US4348596A (en) * 1979-12-27 1982-09-07 Rca Corporation Signal comparison circuit
GB2070372B (en) * 1980-01-31 1983-09-28 Tokyo Shibaura Electric Co Semiconductor memory device
JPS57150190A (en) * 1981-02-27 1982-09-16 Hitachi Ltd Monolithic storage device
US4611299A (en) * 1982-02-22 1986-09-09 Hitachi, Ltd. Monolithic storage device
JPS58147884A (ja) * 1982-02-26 1983-09-02 Toshiba Corp ダイナミック型半導体記憶装置
JPS58186827A (ja) * 1982-04-23 1983-10-31 Oki Electric Ind Co Ltd マイクロプロセツサ
JPS5928294A (ja) * 1982-08-06 1984-02-14 Toshiba Corp 半導体記憶装置
US4627032A (en) * 1983-11-25 1986-12-02 At&T Bell Laboratories Glitch lockout circuit for memory array
JPS60125998A (ja) * 1983-12-12 1985-07-05 Fujitsu Ltd 半導体記憶装置
JPS61123168A (ja) * 1984-11-20 1986-06-11 Fujitsu Ltd 半導体記憶装置
US4758988A (en) * 1985-12-12 1988-07-19 Motorola, Inc. Dual array EEPROM for high endurance capability
US4831594A (en) * 1986-09-25 1989-05-16 Texas Instrument, Inc. Process and device for refreshing an array of dynamic memory cells during precharge of the column lines
JPS63237296A (ja) * 1987-03-25 1988-10-03 Toshiba Corp 半導体記憶装置
JPH02246087A (ja) * 1989-03-20 1990-10-01 Hitachi Ltd 半導体記憶装置ならびにその冗長方式及びレイアウト方式
JP2583606B2 (ja) * 1989-05-16 1997-02-19 富士通株式会社 センスアンプ回路
KR930000815B1 (ko) * 1990-02-20 1993-02-05 삼성전자 주식회사 Rom 회로
US5796671A (en) * 1996-03-01 1998-08-18 Wahlstrom; Sven E. Dynamic random access memory

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648071A (en) * 1970-02-04 1972-03-07 Nat Semiconductor Corp High-speed mos sense amplifier
US3932848A (en) * 1975-01-20 1976-01-13 Intel Corporation Feedback circuit for allowing rapid charging and discharging of a sense node in a static memory

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3735368A (en) * 1971-06-25 1973-05-22 Ibm Full capacity monolithic memory utilizing defective storage cells

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3648071A (en) * 1970-02-04 1972-03-07 Nat Semiconductor Corp High-speed mos sense amplifier
US3932848A (en) * 1975-01-20 1976-01-13 Intel Corporation Feedback circuit for allowing rapid charging and discharging of a sense node in a static memory

Also Published As

Publication number Publication date
SE7702938L (sv) 1977-09-23
US4044341A (en) 1977-08-23
JPS52119035A (en) 1977-10-06
JPS571076B2 (en, 2012) 1982-01-09
DE2712537A1 (de) 1977-10-06
GB1567508A (en) 1980-05-14
DE2712537C3 (en, 2012) 1978-12-07
DE2712537B2 (en, 2012) 1978-04-13
SE408602B (sv) 1979-06-18
FR2345787B1 (en, 2012) 1983-03-25
IT1076627B (it) 1985-04-27

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