FR2341198A1 - Procede de fabrication de diodes schottky a faible capacite parasite, et dispositifs semiconducteurs comportant lesdites diodes - Google Patents

Procede de fabrication de diodes schottky a faible capacite parasite, et dispositifs semiconducteurs comportant lesdites diodes

Info

Publication number
FR2341198A1
FR2341198A1 FR7604081A FR7604081A FR2341198A1 FR 2341198 A1 FR2341198 A1 FR 2341198A1 FR 7604081 A FR7604081 A FR 7604081A FR 7604081 A FR7604081 A FR 7604081A FR 2341198 A1 FR2341198 A1 FR 2341198A1
Authority
FR
France
Prior art keywords
diodes
semiconductor devices
devices containing
schottky diodes
lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7604081A
Other languages
English (en)
French (fr)
Other versions
FR2341198B1 (enExample
Inventor
Pierre Gibeau
Raymond Henry
Jean Lacombe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7604081A priority Critical patent/FR2341198A1/fr
Publication of FR2341198A1 publication Critical patent/FR2341198A1/fr
Application granted granted Critical
Publication of FR2341198B1 publication Critical patent/FR2341198B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/206—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation

Landscapes

  • Electrodes Of Semiconductors (AREA)
FR7604081A 1976-02-13 1976-02-13 Procede de fabrication de diodes schottky a faible capacite parasite, et dispositifs semiconducteurs comportant lesdites diodes Granted FR2341198A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7604081A FR2341198A1 (fr) 1976-02-13 1976-02-13 Procede de fabrication de diodes schottky a faible capacite parasite, et dispositifs semiconducteurs comportant lesdites diodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7604081A FR2341198A1 (fr) 1976-02-13 1976-02-13 Procede de fabrication de diodes schottky a faible capacite parasite, et dispositifs semiconducteurs comportant lesdites diodes

Publications (2)

Publication Number Publication Date
FR2341198A1 true FR2341198A1 (fr) 1977-09-09
FR2341198B1 FR2341198B1 (enExample) 1979-07-20

Family

ID=9169109

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7604081A Granted FR2341198A1 (fr) 1976-02-13 1976-02-13 Procede de fabrication de diodes schottky a faible capacite parasite, et dispositifs semiconducteurs comportant lesdites diodes

Country Status (1)

Country Link
FR (1) FR2341198A1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2426978A1 (fr) * 1978-05-23 1979-12-21 Western Electric Co Dispositifs a semiconducteurs et circuits integres
EP0054647A3 (de) * 1980-12-18 1982-09-29 Siemens Aktiengesellschaft Gunn-Element und Verfahren zu dessen Herstellung
EP0054648A3 (de) * 1980-12-18 1983-03-16 Siemens Aktiengesellschaft pn-Diode und Verfahren zu deren Herstellung
EP0054655A3 (de) * 1980-12-18 1983-12-07 Siemens Aktiengesellschaft Schottky-Diode und Verfahren zu deren Herstellung
US4809052A (en) * 1985-05-10 1989-02-28 Hitachi, Ltd. Semiconductor memory device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2354523A1 (de) * 1972-11-06 1974-05-22 Hughes Aircraft Co Verfahren zur erzeugung von elektrisch isolierenden sperrbereichen in halbleitermaterial

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2354523A1 (de) * 1972-11-06 1974-05-22 Hughes Aircraft Co Verfahren zur erzeugung von elektrisch isolierenden sperrbereichen in halbleitermaterial

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2426978A1 (fr) * 1978-05-23 1979-12-21 Western Electric Co Dispositifs a semiconducteurs et circuits integres
EP0054647A3 (de) * 1980-12-18 1982-09-29 Siemens Aktiengesellschaft Gunn-Element und Verfahren zu dessen Herstellung
EP0054648A3 (de) * 1980-12-18 1983-03-16 Siemens Aktiengesellschaft pn-Diode und Verfahren zu deren Herstellung
EP0054655A3 (de) * 1980-12-18 1983-12-07 Siemens Aktiengesellschaft Schottky-Diode und Verfahren zu deren Herstellung
US4809052A (en) * 1985-05-10 1989-02-28 Hitachi, Ltd. Semiconductor memory device

Also Published As

Publication number Publication date
FR2341198B1 (enExample) 1979-07-20

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Legal Events

Date Code Title Description
ST Notification of lapse