FR2341198B1 - - Google Patents

Info

Publication number
FR2341198B1
FR2341198B1 FR7604081A FR7604081A FR2341198B1 FR 2341198 B1 FR2341198 B1 FR 2341198B1 FR 7604081 A FR7604081 A FR 7604081A FR 7604081 A FR7604081 A FR 7604081A FR 2341198 B1 FR2341198 B1 FR 2341198B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7604081A
Other languages
French (fr)
Other versions
FR2341198A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7604081A priority Critical patent/FR2341198A1/fr
Publication of FR2341198A1 publication Critical patent/FR2341198A1/fr
Application granted granted Critical
Publication of FR2341198B1 publication Critical patent/FR2341198B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/206—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
FR7604081A 1976-02-13 1976-02-13 Procede de fabrication de diodes schottky a faible capacite parasite, et dispositifs semiconducteurs comportant lesdites diodes Granted FR2341198A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7604081A FR2341198A1 (fr) 1976-02-13 1976-02-13 Procede de fabrication de diodes schottky a faible capacite parasite, et dispositifs semiconducteurs comportant lesdites diodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7604081A FR2341198A1 (fr) 1976-02-13 1976-02-13 Procede de fabrication de diodes schottky a faible capacite parasite, et dispositifs semiconducteurs comportant lesdites diodes

Publications (2)

Publication Number Publication Date
FR2341198A1 FR2341198A1 (fr) 1977-09-09
FR2341198B1 true FR2341198B1 (enExample) 1979-07-20

Family

ID=9169109

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7604081A Granted FR2341198A1 (fr) 1976-02-13 1976-02-13 Procede de fabrication de diodes schottky a faible capacite parasite, et dispositifs semiconducteurs comportant lesdites diodes

Country Status (1)

Country Link
FR (1) FR2341198A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4240843A (en) * 1978-05-23 1980-12-23 Western Electric Company, Inc. Forming self-guarded p-n junctions by epitaxial regrowth of amorphous regions using selective radiation annealing
DE3047870A1 (de) * 1980-12-18 1982-07-15 Siemens AG, 1000 Berlin und 8000 München "pn-diode und verfahren zu deren herstellung"
DE3047821A1 (de) * 1980-12-18 1982-07-15 Siemens AG, 1000 Berlin und 8000 München Schottky-diode und verfahren zu deren herstellung
DE3047843A1 (de) * 1980-12-18 1982-07-15 Siemens AG, 1000 Berlin und 8000 München Gunn-element und verfahren zu dessen herstellung
US4809052A (en) * 1985-05-10 1989-02-28 Hitachi, Ltd. Semiconductor memory device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3897273A (en) * 1972-11-06 1975-07-29 Hughes Aircraft Co Process for forming electrically isolating high resistivity regions in GaAs

Also Published As

Publication number Publication date
FR2341198A1 (fr) 1977-09-09

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Legal Events

Date Code Title Description
ST Notification of lapse