FR2337426A1 - Procede de fabrication de circuits integres a semi-conducteur a forte densite et circuits integres ainsi obtenus - Google Patents

Procede de fabrication de circuits integres a semi-conducteur a forte densite et circuits integres ainsi obtenus

Info

Publication number
FR2337426A1
FR2337426A1 FR7635301A FR7635301A FR2337426A1 FR 2337426 A1 FR2337426 A1 FR 2337426A1 FR 7635301 A FR7635301 A FR 7635301A FR 7635301 A FR7635301 A FR 7635301A FR 2337426 A1 FR2337426 A1 FR 2337426A1
Authority
FR
France
Prior art keywords
integrated circuits
high density
manufacturing high
density semiconductor
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7635301A
Other languages
English (en)
Inventor
John Balyoz
Algirdas J Gruodis
Teh-Sen Jen
Wadie F Mikhail
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2337426A1 publication Critical patent/FR2337426A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11801—Masterslice integrated circuits using bipolar technology
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/084—Diode-transistor logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/088—Transistor-transistor logic
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
    • H03K19/091—Integrated injection logic or merged transistor logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Geometry (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Logic Circuits (AREA)
FR7635301A 1975-12-29 1976-11-19 Procede de fabrication de circuits integres a semi-conducteur a forte densite et circuits integres ainsi obtenus Withdrawn FR2337426A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/644,775 US4032962A (en) 1975-12-29 1975-12-29 High density semiconductor integrated circuit layout

Publications (1)

Publication Number Publication Date
FR2337426A1 true FR2337426A1 (fr) 1977-07-29

Family

ID=24586282

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7635301A Withdrawn FR2337426A1 (fr) 1975-12-29 1976-11-19 Procede de fabrication de circuits integres a semi-conducteur a forte densite et circuits integres ainsi obtenus

Country Status (6)

Country Link
US (2) US4032962A (fr)
JP (1) JPS6011470B2 (fr)
CA (1) CA1064624A (fr)
DE (1) DE2655575A1 (fr)
FR (1) FR2337426A1 (fr)
GB (1) GB1557790A (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52137279A (en) * 1976-05-12 1977-11-16 Hitachi Ltd Semiconductor device for optical coupling
JPS52156580A (en) * 1976-06-23 1977-12-27 Hitachi Ltd Semiconductor integrated circuit device and its production
DE2639799C2 (de) * 1976-09-03 1984-04-12 Siemens AG, 1000 Berlin und 8000 München Halbleiterverbundanordnung
US4087900A (en) * 1976-10-18 1978-05-09 Bell Telephone Laboratories, Incorporated Fabrication of semiconductor integrated circuit structure including injection logic configuration compatible with complementary bipolar transistors utilizing simultaneous formation of device regions
JPS5846863B2 (ja) * 1977-08-25 1983-10-19 松下電器産業株式会社 半導体集積回路装置
US4159915A (en) * 1977-10-25 1979-07-03 International Business Machines Corporation Method for fabrication vertical NPN and PNP structures utilizing ion-implantation
NL7712649A (nl) * 1977-11-17 1979-05-21 Philips Nv Geientegreerde schakeling.
US4249193A (en) * 1978-05-25 1981-02-03 International Business Machines Corporation LSI Semiconductor device and fabrication thereof
JPS5546548A (en) * 1978-09-28 1980-04-01 Semiconductor Res Found Electrostatic induction integrated circuit
JPS55103756A (en) * 1979-01-31 1980-08-08 Semiconductor Res Found Electrostatic induction transistor integrated circuit
US4412376A (en) * 1979-03-30 1983-11-01 Ibm Corporation Fabrication method for vertical PNP structure with Schottky barrier diode emitter utilizing ion implantation
US4281448A (en) * 1980-04-14 1981-08-04 Gte Laboratories Incorporated Method of fabricating a diode bridge rectifier in monolithic integrated circuit structure utilizing isolation diffusions and metal semiconductor rectifying barrier diode formation
US4402044A (en) * 1980-11-24 1983-08-30 Texas Instruments Incorporated Microprocessor with strip layout of busses, ALU and registers
JPS58157151A (ja) * 1982-03-15 1983-09-19 Mitsubishi Electric Corp 半導体集積回路装置
US4501976A (en) * 1982-09-07 1985-02-26 Signetics Corporation Transistor-transistor logic circuit with hysteresis
JPH0758761B2 (ja) * 1983-12-30 1995-06-21 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体集積回路チップ
US4808552A (en) * 1985-09-11 1989-02-28 Texas Instruments Incorporated Process for making vertically-oriented interconnections for VLSI devices
US5155570A (en) * 1988-06-21 1992-10-13 Sanyo Electric Co., Ltd. Semiconductor integrated circuit having a pattern layout applicable to various custom ICs
JPH0334570A (ja) * 1989-06-30 1991-02-14 Nec Corp マスタースライス方式集積回路装置
US6201267B1 (en) 1999-03-01 2001-03-13 Rensselaer Polytechnic Institute Compact low power complement FETs
US6462977B2 (en) 2000-08-17 2002-10-08 David Earl Butz Data storage device having virtual columns and addressing layers
US7283381B2 (en) 2000-08-17 2007-10-16 David Earl Butz System and methods for addressing a matrix incorporating virtual columns and addressing layers
JP4346322B2 (ja) * 2003-02-07 2009-10-21 株式会社ルネサステクノロジ 半導体装置
KR101115657B1 (ko) * 2009-07-01 2012-02-15 한국야금 주식회사 홈 가공용 인서트
US8739100B2 (en) * 2011-06-29 2014-05-27 The Regents Of The University Of California Distributed LC resonant tanks clock tree synthesis

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3702025A (en) * 1969-05-12 1972-11-07 Honeywell Inc Discretionary interconnection process
US3833842A (en) * 1970-03-09 1974-09-03 Texas Instruments Inc Modified tungsten metallization for semiconductor devices
US3771217A (en) * 1971-04-16 1973-11-13 Texas Instruments Inc Integrated circuit arrays utilizing discretionary wiring and method of fabricating same
JPS492871A (fr) * 1972-04-22 1974-01-11
US3896482A (en) * 1972-06-30 1975-07-22 Ibm Dynamic mosfet layout technique
US3911289A (en) * 1972-08-18 1975-10-07 Matsushita Electric Ind Co Ltd MOS type semiconductor IC device
CA997481A (en) * 1972-12-29 1976-09-21 International Business Machines Corporation Dc testing of integrated circuits and a novel integrated circuit structure to facilitate such testing
GB1440512A (en) * 1973-04-30 1976-06-23 Rca Corp Universal array using complementary transistors
US3902188A (en) * 1973-08-15 1975-08-26 Rca Corp High frequency transistor

Also Published As

Publication number Publication date
JPS5282191A (en) 1977-07-09
US4080720A (en) 1978-03-28
US4032962A (en) 1977-06-28
CA1064624A (fr) 1979-10-16
JPS6011470B2 (ja) 1985-03-26
DE2655575A1 (de) 1977-07-07
GB1557790A (en) 1979-12-12

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Legal Events

Date Code Title Description
ST Notification of lapse