FR2335957A1 - Dispositif semiconducteur monolithique comprenant un pont de redressement - Google Patents

Dispositif semiconducteur monolithique comprenant un pont de redressement

Info

Publication number
FR2335957A1
FR2335957A1 FR7538584A FR7538584A FR2335957A1 FR 2335957 A1 FR2335957 A1 FR 2335957A1 FR 7538584 A FR7538584 A FR 7538584A FR 7538584 A FR7538584 A FR 7538584A FR 2335957 A1 FR2335957 A1 FR 2335957A1
Authority
FR
France
Prior art keywords
substrate
junction
bridge
diodes
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7538584A
Other languages
English (en)
French (fr)
Other versions
FR2335957B1 (enrdf_load_stackoverflow
Inventor
Maurice Bonis
Bernard Roger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7538584A priority Critical patent/FR2335957A1/fr
Publication of FR2335957A1 publication Critical patent/FR2335957A1/fr
Application granted granted Critical
Publication of FR2335957B1 publication Critical patent/FR2335957B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
FR7538584A 1975-12-17 1975-12-17 Dispositif semiconducteur monolithique comprenant un pont de redressement Granted FR2335957A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7538584A FR2335957A1 (fr) 1975-12-17 1975-12-17 Dispositif semiconducteur monolithique comprenant un pont de redressement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7538584A FR2335957A1 (fr) 1975-12-17 1975-12-17 Dispositif semiconducteur monolithique comprenant un pont de redressement

Publications (2)

Publication Number Publication Date
FR2335957A1 true FR2335957A1 (fr) 1977-07-15
FR2335957B1 FR2335957B1 (enrdf_load_stackoverflow) 1980-03-28

Family

ID=9163829

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7538584A Granted FR2335957A1 (fr) 1975-12-17 1975-12-17 Dispositif semiconducteur monolithique comprenant un pont de redressement

Country Status (1)

Country Link
FR (1) FR2335957A1 (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2854995A1 (de) * 1977-12-30 1979-07-05 Philips Nv Integrierte darlington-schaltung
DE3003911A1 (de) * 1979-02-14 1980-08-21 Philips Nv Halbleiteranordnung
FR2469804A1 (fr) * 1979-11-07 1981-05-22 Labo Electronique Physique Procede de realisation d'un dispositif semi-conducteur comprenant un assemblage de diodes en serie et dispositif en resultant
DE3044444A1 (de) * 1980-11-26 1982-06-16 Deutsche Itt Industries Gmbh, 7800 Freiburg "monolithisch integrierte gleichrichter-brueckenschaltung"
EP0603973A3 (en) * 1992-12-23 1995-06-28 Philips Electronics Nv Semiconductor arrangement with p-n junctions separated by trenches and method for their production.
FR2729008A1 (fr) * 1994-12-30 1996-07-05 Sgs Thomson Microelectronics Circuit integre de puissance
US6411155B2 (en) 1994-12-30 2002-06-25 Sgs-Thomson Microelectronics S.A. Power integrated circuit

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2854995A1 (de) * 1977-12-30 1979-07-05 Philips Nv Integrierte darlington-schaltung
DE3003911A1 (de) * 1979-02-14 1980-08-21 Philips Nv Halbleiteranordnung
FR2469804A1 (fr) * 1979-11-07 1981-05-22 Labo Electronique Physique Procede de realisation d'un dispositif semi-conducteur comprenant un assemblage de diodes en serie et dispositif en resultant
DE3044444A1 (de) * 1980-11-26 1982-06-16 Deutsche Itt Industries Gmbh, 7800 Freiburg "monolithisch integrierte gleichrichter-brueckenschaltung"
EP0603973A3 (en) * 1992-12-23 1995-06-28 Philips Electronics Nv Semiconductor arrangement with p-n junctions separated by trenches and method for their production.
FR2729008A1 (fr) * 1994-12-30 1996-07-05 Sgs Thomson Microelectronics Circuit integre de puissance
EP0721218A1 (fr) * 1994-12-30 1996-07-10 STMicroelectronics S.A. Circuit intégré de puissance
US6017778A (en) * 1994-12-30 2000-01-25 Sgs-Thomson Microelectronics S.A. Method for making power integrated circuit
US6075277A (en) * 1994-12-30 2000-06-13 Sgs-Thomas Microelectronics S.A. Power integrated circuit
US6411155B2 (en) 1994-12-30 2002-06-25 Sgs-Thomson Microelectronics S.A. Power integrated circuit
US6580142B1 (en) 1994-12-30 2003-06-17 Sgs-Thomson Microelectronics S.A. Electrical control methods involving semiconductor components

Also Published As

Publication number Publication date
FR2335957B1 (enrdf_load_stackoverflow) 1980-03-28

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Legal Events

Date Code Title Description
ST Notification of lapse