FR2335957B1 - - Google Patents

Info

Publication number
FR2335957B1
FR2335957B1 FR7538584A FR7538584A FR2335957B1 FR 2335957 B1 FR2335957 B1 FR 2335957B1 FR 7538584 A FR7538584 A FR 7538584A FR 7538584 A FR7538584 A FR 7538584A FR 2335957 B1 FR2335957 B1 FR 2335957B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7538584A
Other languages
French (fr)
Other versions
FR2335957A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7538584A priority Critical patent/FR2335957A1/fr
Publication of FR2335957A1 publication Critical patent/FR2335957A1/fr
Application granted granted Critical
Publication of FR2335957B1 publication Critical patent/FR2335957B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
FR7538584A 1975-12-17 1975-12-17 Dispositif semiconducteur monolithique comprenant un pont de redressement Granted FR2335957A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7538584A FR2335957A1 (fr) 1975-12-17 1975-12-17 Dispositif semiconducteur monolithique comprenant un pont de redressement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7538584A FR2335957A1 (fr) 1975-12-17 1975-12-17 Dispositif semiconducteur monolithique comprenant un pont de redressement

Publications (2)

Publication Number Publication Date
FR2335957A1 FR2335957A1 (fr) 1977-07-15
FR2335957B1 true FR2335957B1 (enrdf_load_stackoverflow) 1980-03-28

Family

ID=9163829

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7538584A Granted FR2335957A1 (fr) 1975-12-17 1975-12-17 Dispositif semiconducteur monolithique comprenant un pont de redressement

Country Status (1)

Country Link
FR (1) FR2335957A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4360822A (en) 1979-02-14 1982-11-23 U.S. Philips Corporation Semiconductor device having an improved semiconductor resistor

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2413785A1 (fr) * 1977-12-30 1979-07-27 Radiotechnique Compelec Dispositif semi-conducteur monolithique a structure plane multicouche, de type mesa, comprenant au moins un transistor associe a une diode schottky
FR2469804A1 (fr) * 1979-11-07 1981-05-22 Labo Electronique Physique Procede de realisation d'un dispositif semi-conducteur comprenant un assemblage de diodes en serie et dispositif en resultant
DE3044444A1 (de) * 1980-11-26 1982-06-16 Deutsche Itt Industries Gmbh, 7800 Freiburg "monolithisch integrierte gleichrichter-brueckenschaltung"
EP0603973A3 (en) * 1992-12-23 1995-06-28 Philips Electronics Nv Semiconductor component having p-n junctions separated by trenches and its manufacturing process.
FR2729008B1 (fr) * 1994-12-30 1997-03-21 Sgs Thomson Microelectronics Circuit integre de puissance
US6411155B2 (en) 1994-12-30 2002-06-25 Sgs-Thomson Microelectronics S.A. Power integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4360822A (en) 1979-02-14 1982-11-23 U.S. Philips Corporation Semiconductor device having an improved semiconductor resistor

Also Published As

Publication number Publication date
FR2335957A1 (fr) 1977-07-15

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Legal Events

Date Code Title Description
ST Notification of lapse