FR2335919A1 - Methode pour faire varier le diametre d'un faisceau de particules chargees - Google Patents

Methode pour faire varier le diametre d'un faisceau de particules chargees

Info

Publication number
FR2335919A1
FR2335919A1 FR7634519A FR7634519A FR2335919A1 FR 2335919 A1 FR2335919 A1 FR 2335919A1 FR 7634519 A FR7634519 A FR 7634519A FR 7634519 A FR7634519 A FR 7634519A FR 2335919 A1 FR2335919 A1 FR 2335919A1
Authority
FR
France
Prior art keywords
vary
diameter
charged particle
particle beam
charged
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7634519A
Other languages
English (en)
French (fr)
Other versions
FR2335919B1 (esLanguage
Inventor
Wen-Chuang Ko
Erich Sawatzky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2335919A1 publication Critical patent/FR2335919A1/fr
Application granted granted Critical
Publication of FR2335919B1 publication Critical patent/FR2335919B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)
FR7634519A 1975-12-15 1976-11-08 Methode pour faire varier le diametre d'un faisceau de particules chargees Granted FR2335919A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/641,054 US4013891A (en) 1975-12-15 1975-12-15 Method for varying the diameter of a beam of charged particles

Publications (2)

Publication Number Publication Date
FR2335919A1 true FR2335919A1 (fr) 1977-07-15
FR2335919B1 FR2335919B1 (esLanguage) 1978-06-30

Family

ID=24570764

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7634519A Granted FR2335919A1 (fr) 1975-12-15 1976-11-08 Methode pour faire varier le diametre d'un faisceau de particules chargees

Country Status (6)

Country Link
US (1) US4013891A (esLanguage)
JP (1) JPS588548B2 (esLanguage)
CA (1) CA1061416A (esLanguage)
DE (1) DE2647254C2 (esLanguage)
FR (1) FR2335919A1 (esLanguage)
GB (1) GB1519726A (esLanguage)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3430984A1 (de) * 1984-08-23 1986-03-06 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zur registrierung von teilchen oder quanten mit hilfe eines detektors

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2383702A1 (fr) * 1977-03-18 1978-10-13 Anvar Perfectionnements aux procedes et dispositifs de dopage de materiaux semi-conducteurs
FR2389998B1 (esLanguage) * 1977-05-05 1981-11-20 Ibm
US4118630A (en) * 1977-05-05 1978-10-03 International Business Machines Corporation Ion implantation apparatus with a cooled structure controlling the surface potential of a target surface
US4199689A (en) * 1977-12-21 1980-04-22 Tokyo Shibaura Denki Kabushiki Kaisha Electron beam exposing method and electron beam apparatus
FR2412939A1 (fr) * 1977-12-23 1979-07-20 Anvar Implanteur d'ions a fort courant
US4263514A (en) * 1979-09-13 1981-04-21 Hughes Aircraft Company Electron beam system
JPS58164134A (ja) * 1982-03-24 1983-09-29 Hitachi Ltd 半導体装置の製造方法
JPS60243960A (ja) * 1984-05-18 1985-12-03 Hitachi Ltd イオンマイクロビ−ム装置
US4717829A (en) * 1985-03-14 1988-01-05 Varian Associates, Inc. Platen and beam setup flag assembly for ion implanter
JPS62115715A (ja) * 1985-07-22 1987-05-27 Toshiba Mach Co Ltd 電子ビ−ム露光装置
JPH0766775B2 (ja) * 1985-12-04 1995-07-19 日新電機株式会社 イオン注入装置
US4757208A (en) * 1986-03-07 1988-07-12 Hughes Aircraft Company Masked ion beam lithography system and method
JPH0744027B2 (ja) * 1986-04-28 1995-05-15 日新電機株式会社 イオン処理装置
DE3734442A1 (de) * 1987-10-12 1989-04-27 Kernforschungsanlage Juelich Verfahren und vorrichtung zur bestrahlung grosser flaechen mit ionen
US7045799B1 (en) * 2004-11-19 2006-05-16 Varian Semiconductor Equipment Associates, Inc. Weakening focusing effect of acceleration-deceleration column of ion implanter
US10062546B2 (en) * 2013-05-14 2018-08-28 Hitachi, Ltd. Sample holder and focused-ion-beam machining device provided therewith
CN104091746A (zh) * 2014-06-30 2014-10-08 京东方科技集团股份有限公司 一种离子注入设备用电极和离子注入设备
JP2022147563A (ja) * 2021-03-23 2022-10-06 本田技研工業株式会社 塗装方法および塗膜硬化装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3434894A (en) * 1965-10-06 1969-03-25 Ion Physics Corp Fabricating solid state devices by ion implantation
US3483427A (en) * 1967-11-03 1969-12-09 Minnesota Mining & Mfg Lens for electron beam recorder
US3619608A (en) * 1969-08-04 1971-11-09 Stanford Research Inst Multiple imaging charged particle beam exposure system
US3689782A (en) * 1971-07-01 1972-09-05 Thomson Csf Electronic transducer for a piezoelectric line
US3756862A (en) * 1971-12-21 1973-09-04 Ibm Proton enhanced diffusion methods

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3430984A1 (de) * 1984-08-23 1986-03-06 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zur registrierung von teilchen oder quanten mit hilfe eines detektors

Also Published As

Publication number Publication date
JPS5274198A (en) 1977-06-21
DE2647254C2 (de) 1984-05-10
DE2647254A1 (de) 1977-06-16
FR2335919B1 (esLanguage) 1978-06-30
CA1061416A (en) 1979-08-28
US4013891A (en) 1977-03-22
JPS588548B2 (ja) 1983-02-16
GB1519726A (en) 1978-08-02

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Legal Events

Date Code Title Description
ST Notification of lapse