FR2334198B1 - - Google Patents
Info
- Publication number
- FR2334198B1 FR2334198B1 FR7636049A FR7636049A FR2334198B1 FR 2334198 B1 FR2334198 B1 FR 2334198B1 FR 7636049 A FR7636049 A FR 7636049A FR 7636049 A FR7636049 A FR 7636049A FR 2334198 B1 FR2334198 B1 FR 2334198B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
- H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W15/00—Highly-doped buried regions of integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W15/00—Highly-doped buried regions of integrated devices
- H10W15/01—Manufacture or treatment
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2554426A DE2554426C3 (de) | 1975-12-03 | 1975-12-03 | Verfahren zur Erzeugung einer lokal hohen inversen Stromverstärkung bei einem Planartransistor sowie nach diesem Verfahren hergestellter invers betriebener Transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2334198A1 FR2334198A1 (fr) | 1977-07-01 |
| FR2334198B1 true FR2334198B1 (enExample) | 1983-01-21 |
Family
ID=5963381
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7636049A Granted FR2334198A1 (fr) | 1975-12-03 | 1976-11-30 | Procede d'obtention d'une amplification en courant inverse localement elevee dans un transistor planar |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4118251A (enExample) |
| JP (1) | JPS5269277A (enExample) |
| DE (1) | DE2554426C3 (enExample) |
| FR (1) | FR2334198A1 (enExample) |
| GB (1) | GB1502229A (enExample) |
| IT (1) | IT1064433B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4128439A (en) * | 1977-08-01 | 1978-12-05 | International Business Machines Corporation | Method for forming self-aligned field effect device by ion implantation and outdiffusion |
| CA1116309A (en) * | 1977-11-30 | 1982-01-12 | David L. Bergeron | Structure and process for optimizing the characteristics of i.sup.2l devices |
| US4258379A (en) * | 1978-09-25 | 1981-03-24 | Hitachi, Ltd. | IIL With in and outdiffused emitter pocket |
| US4278475A (en) * | 1979-01-04 | 1981-07-14 | Westinghouse Electric Corp. | Forming of contoured irradiated regions in materials such as semiconductor bodies by nuclear radiation |
| CA1188418A (en) * | 1982-01-04 | 1985-06-04 | Jay A. Shideler | Oxide isolation process for standard ram/prom and lateral pnp cell ram |
| US4624046A (en) * | 1982-01-04 | 1986-11-25 | Fairchild Camera & Instrument Corp. | Oxide isolation process for standard RAM/PROM and lateral PNP cell RAM |
| JPS60251664A (ja) * | 1984-05-28 | 1985-12-12 | Sony Corp | 半導体装置の製造方法 |
| GB2188478B (en) * | 1986-03-26 | 1989-11-22 | Stc Plc | Forming doped wells in sillicon subtstrates |
| FR2636474B1 (fr) * | 1988-09-09 | 1990-11-30 | Sgs Thomson Microelectronics | Procede de fabrication d'une diode de regulation et de protection |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL297821A (enExample) * | 1962-10-08 | |||
| DE1614827C2 (de) * | 1967-06-22 | 1979-06-21 | Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm | Verfahren zum Herstellen eines Transistors |
| US3655457A (en) * | 1968-08-06 | 1972-04-11 | Ibm | Method of making or modifying a pn-junction by ion implantation |
| BE758683A (fr) * | 1969-11-10 | 1971-05-10 | Ibm | Procede de fabrication d'un dispositif monolithique auto-isolant et structure de transistor a socle |
| DE2021824C3 (de) * | 1970-05-05 | 1980-08-14 | Ibm Deutschland Gmbh, 7000 Stuttgart | Monolithische Halbleiterschaltung |
| DE2507038C3 (de) * | 1975-02-19 | 1980-01-24 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Inverser Planartransistor und Verfahren zu seiner Herstellung |
| DE2507613C3 (de) * | 1975-02-21 | 1979-07-05 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung eines invers betriebenen Transistors |
-
1975
- 1975-12-03 DE DE2554426A patent/DE2554426C3/de not_active Expired
-
1976
- 1976-11-08 US US05/739,730 patent/US4118251A/en not_active Expired - Lifetime
- 1976-11-24 GB GB48902/76A patent/GB1502229A/en not_active Expired
- 1976-11-25 IT IT29752/76A patent/IT1064433B/it active
- 1976-11-30 FR FR7636049A patent/FR2334198A1/fr active Granted
- 1976-12-01 JP JP51144601A patent/JPS5269277A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| IT1064433B (it) | 1985-02-18 |
| GB1502229A (en) | 1978-02-22 |
| JPS5269277A (en) | 1977-06-08 |
| DE2554426A1 (de) | 1977-06-16 |
| US4118251A (en) | 1978-10-03 |
| DE2554426C3 (de) | 1979-06-21 |
| FR2334198A1 (fr) | 1977-07-01 |
| DE2554426B2 (de) | 1978-10-26 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |