FR2327657A1 - Laser a jonction a double heterostructure fonctionnant dans un seul mode transversal - Google Patents

Laser a jonction a double heterostructure fonctionnant dans un seul mode transversal

Info

Publication number
FR2327657A1
FR2327657A1 FR7630119A FR7630119A FR2327657A1 FR 2327657 A1 FR2327657 A1 FR 2327657A1 FR 7630119 A FR7630119 A FR 7630119A FR 7630119 A FR7630119 A FR 7630119A FR 2327657 A1 FR2327657 A1 FR 2327657A1
Authority
FR
France
Prior art keywords
section
single cross
laser operating
double heterostructure
junction laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7630119A
Other languages
English (en)
French (fr)
Other versions
FR2327657B1 (cg-RX-API-DMAC7.html
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of FR2327657A1 publication Critical patent/FR2327657A1/fr
Application granted granted Critical
Publication of FR2327657B1 publication Critical patent/FR2327657B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
  • Led Devices (AREA)
FR7630119A 1975-10-07 1976-10-06 Laser a jonction a double heterostructure fonctionnant dans un seul mode transversal Granted FR2327657A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12116275A JPS5245296A (en) 1975-10-07 1975-10-07 Semiconductive phototransmission pass and semiconductor emission devic e used it

Publications (2)

Publication Number Publication Date
FR2327657A1 true FR2327657A1 (fr) 1977-05-06
FR2327657B1 FR2327657B1 (cg-RX-API-DMAC7.html) 1983-05-27

Family

ID=14804366

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7630119A Granted FR2327657A1 (fr) 1975-10-07 1976-10-06 Laser a jonction a double heterostructure fonctionnant dans un seul mode transversal

Country Status (6)

Country Link
US (1) US4128815A (cg-RX-API-DMAC7.html)
JP (1) JPS5245296A (cg-RX-API-DMAC7.html)
CA (1) CA1072666A (cg-RX-API-DMAC7.html)
DE (1) DE2643503C3 (cg-RX-API-DMAC7.html)
FR (1) FR2327657A1 (cg-RX-API-DMAC7.html)
GB (1) GB1557061A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0020254A1 (fr) * 1979-06-01 1980-12-10 Thomson-Csf Diode laser à émission localisée

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1558642A (en) * 1977-04-01 1980-01-09 Standard Telephones Cables Ltd Injection lasers
JPS5413284A (en) * 1977-07-01 1979-01-31 Fujitsu Ltd Semiconductor light emitting device
NL7707720A (nl) * 1977-07-12 1979-01-16 Philips Nv Halfgeleiderlaser of -versterker.
JPS5423487A (en) * 1977-07-25 1979-02-22 Nippon Telegr & Teleph Corp <Ntt> Semiconuctor laser of current stenosing type
JPS5769793A (en) * 1980-10-16 1982-04-28 Mitsubishi Electric Corp Semiconductor laser device
JPS57149788A (en) * 1982-02-17 1982-09-16 Hitachi Ltd Injection semiconductor laser element
GB2139422B (en) * 1983-03-24 1987-06-03 Hitachi Ltd Semiconductor laser and method of fabricating the same
JPS6045085A (ja) * 1983-08-22 1985-03-11 Rohm Co Ltd 半導体レ−ザおよびその製造方法
JPS6045086A (ja) * 1983-08-22 1985-03-11 Rohm Co Ltd 半導体レ−ザおよびその製造方法
JPS6064488A (ja) * 1983-09-19 1985-04-13 Rohm Co Ltd 半導体レ−ザおよびその製造方法
JP2584607B2 (ja) * 1983-09-19 1997-02-26 ロ−ム 株式会社 半導体レ−ザ
JP2584606B2 (ja) * 1983-09-19 1997-02-26 ロ−ム 株式会社 半導体レ−ザ
GB8406432D0 (en) * 1984-03-12 1984-04-18 British Telecomm Semiconductor devices
JPH0697315B2 (ja) * 1984-04-06 1994-11-30 松下電器産業株式会社 装荷型方向性結合器
JPS60229389A (ja) * 1984-04-26 1985-11-14 Sharp Corp 半導体レ−ザ素子
JPS60249117A (ja) * 1984-05-25 1985-12-09 Nec Corp 導波型光素子
JPS6113222A (ja) * 1984-06-29 1986-01-21 Nec Corp 集積化導波型光素子
GB2172141B (en) * 1985-03-08 1988-11-16 Stc Plc Single heterostructure laser chip manufacture
DE3610333A1 (de) * 1985-04-19 1986-11-27 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung eines oberflaechengitters mit einer bestimmten gitterkonstanten auf einem tieferliegenden oberflaechenbereich einer mesastruktur
JPH0827446B2 (ja) * 1986-02-18 1996-03-21 日本電信電話株式会社 量子井戸形光変調器およびその製造方法
FR2606223B1 (fr) * 1986-10-29 1996-03-01 Seiko Epson Corp Laser a semiconducteur et son procede de fabrication
JP2907890B2 (ja) * 1989-10-03 1999-06-21 日本電気株式会社 光変調器
JP2754957B2 (ja) * 1991-07-10 1998-05-20 日本電気株式会社 半導体光制御素子およびその製造方法
DE112017008037T5 (de) * 2017-09-14 2020-07-09 Mitsubishi Electric Corporation Halbleiter-Laservorrichtung
CN114204417B (zh) * 2021-12-13 2023-03-24 山东中芯光电科技有限公司 高功率半导体激光器的光芯片结构及其制备方法、激光器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3993964A (en) * 1974-07-26 1976-11-23 Nippon Electric Company, Ltd. Double heterostructure stripe geometry semiconductor laser device
JPS5321275B2 (cg-RX-API-DMAC7.html) * 1972-03-13 1978-07-01
JPS5240958B2 (cg-RX-API-DMAC7.html) * 1972-06-26 1977-10-15
SU511794A1 (ru) * 1973-05-28 1976-10-05 Предприятие П/Я А-1172 Способ получени полупроводниковой светоизлучающей структуры

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0020254A1 (fr) * 1979-06-01 1980-12-10 Thomson-Csf Diode laser à émission localisée
FR2458158A1 (fr) * 1979-06-01 1980-12-26 Thomson Csf Diode laser a emission localisee et emetteur opto-electronique utilisant une telle diode

Also Published As

Publication number Publication date
DE2643503C3 (de) 1979-09-13
GB1557061A (en) 1979-12-05
DE2643503B2 (de) 1979-01-04
CA1072666A (en) 1980-02-26
US4128815A (en) 1978-12-05
JPS5245296A (en) 1977-04-09
DE2643503A1 (de) 1977-04-14
FR2327657B1 (cg-RX-API-DMAC7.html) 1983-05-27

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Legal Events

Date Code Title Description
TP Transmission of property
CA Change of address