FR2326761A1 - Memoire d'informations pour la memorisation d'informations sous forme de porteurs de charge electriques et procede pour sa mise en oeuvre - Google Patents
Memoire d'informations pour la memorisation d'informations sous forme de porteurs de charge electriques et procede pour sa mise en oeuvreInfo
- Publication number
- FR2326761A1 FR2326761A1 FR7627472A FR7627472A FR2326761A1 FR 2326761 A1 FR2326761 A1 FR 2326761A1 FR 7627472 A FR7627472 A FR 7627472A FR 7627472 A FR7627472 A FR 7627472A FR 2326761 A1 FR2326761 A1 FR 2326761A1
- Authority
- FR
- France
- Prior art keywords
- information
- implementation
- memory
- electric chargers
- storing information
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2543628A DE2543628C2 (de) | 1975-09-30 | 1975-09-30 | Halbleiterbauelement zum Speichern von Information in Form von elektrischen Ladungen, Verfahren zu seinem Betrieb und Informatiosspeicher mit solchen Halbleiterbauelementen |
DE2543677A DE2543677C3 (de) | 1975-09-30 | 1975-09-30 | Dynamisches Halbleiterspeicherelement und Verfahren zu dessen Betrieb |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2326761A1 true FR2326761A1 (fr) | 1977-04-29 |
FR2326761B1 FR2326761B1 (ja) | 1978-10-20 |
Family
ID=25769458
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7627472A Granted FR2326761A1 (fr) | 1975-09-30 | 1976-09-13 | Memoire d'informations pour la memorisation d'informations sous forme de porteurs de charge electriques et procede pour sa mise en oeuvre |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5243381A (ja) |
FR (1) | FR2326761A1 (ja) |
GB (1) | GB1564617A (ja) |
IT (1) | IT1072548B (ja) |
NL (1) | NL7610696A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2406286A1 (fr) * | 1977-10-13 | 1979-05-11 | Mohsen Amr | Memoire a semi-conducteurs a acces direct dynamique et cellule dynamique a transfert de charge vertical pour une telle memoire |
EP0011686A1 (de) * | 1978-09-29 | 1980-06-11 | Siemens Aktiengesellschaft | Hochintegrierbares dynamisches Speicherelement und Verfahren zu seinem Betrieb |
FR2486310A1 (fr) * | 1980-07-04 | 1982-01-08 | Philips Nv | Capacite a effet de champ |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57162458A (en) * | 1981-03-31 | 1982-10-06 | Fujitsu Ltd | Semiconductor device |
JPS59154077A (ja) * | 1983-02-23 | 1984-09-03 | Clarion Co Ltd | 可変容量素子 |
JPH0661465A (ja) * | 1992-08-11 | 1994-03-04 | Mitsubishi Electric Corp | 赤外線撮像素子 |
CN105953975A (zh) * | 2016-07-19 | 2016-09-21 | 农业部南京农业机械化研究所 | 砝码杠杆式可移动静标定装置及标定方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2144903A1 (ja) * | 1971-07-06 | 1973-02-16 | Ibm |
-
1976
- 1976-09-13 FR FR7627472A patent/FR2326761A1/fr active Granted
- 1976-09-27 NL NL7610696A patent/NL7610696A/xx not_active Application Discontinuation
- 1976-09-28 GB GB40151/76A patent/GB1564617A/en not_active Expired
- 1976-09-29 IT IT27758/76A patent/IT1072548B/it active
- 1976-09-30 JP JP51117884A patent/JPS5243381A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2144903A1 (ja) * | 1971-07-06 | 1973-02-16 | Ibm |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2406286A1 (fr) * | 1977-10-13 | 1979-05-11 | Mohsen Amr | Memoire a semi-conducteurs a acces direct dynamique et cellule dynamique a transfert de charge vertical pour une telle memoire |
EP0011686A1 (de) * | 1978-09-29 | 1980-06-11 | Siemens Aktiengesellschaft | Hochintegrierbares dynamisches Speicherelement und Verfahren zu seinem Betrieb |
FR2486310A1 (fr) * | 1980-07-04 | 1982-01-08 | Philips Nv | Capacite a effet de champ |
Also Published As
Publication number | Publication date |
---|---|
IT1072548B (it) | 1985-04-10 |
JPS6348187B2 (ja) | 1988-09-28 |
GB1564617A (en) | 1980-04-10 |
FR2326761B1 (ja) | 1978-10-20 |
JPS5243381A (en) | 1977-04-05 |
NL7610696A (nl) | 1977-04-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |