FR2325189A1 - Procede pour la fabrication de dispositifs semi-conducteurs munis d'une couche protectrice en oxyde - Google Patents

Procede pour la fabrication de dispositifs semi-conducteurs munis d'une couche protectrice en oxyde

Info

Publication number
FR2325189A1
FR2325189A1 FR7628166A FR7628166A FR2325189A1 FR 2325189 A1 FR2325189 A1 FR 2325189A1 FR 7628166 A FR7628166 A FR 7628166A FR 7628166 A FR7628166 A FR 7628166A FR 2325189 A1 FR2325189 A1 FR 2325189A1
Authority
FR
France
Prior art keywords
oxide layer
semiconductor devices
manufacturing semiconductor
devices equipped
protective oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7628166A
Other languages
English (en)
French (fr)
Other versions
FR2325189B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Signetics Corp
Original Assignee
Signetics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Signetics Corp filed Critical Signetics Corp
Publication of FR2325189A1 publication Critical patent/FR2325189A1/fr
Application granted granted Critical
Publication of FR2325189B1 publication Critical patent/FR2325189B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/068—Graphite masking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/976—Temporary protective layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
FR7628166A 1975-09-22 1976-09-20 Procede pour la fabrication de dispositifs semi-conducteurs munis d'une couche protectrice en oxyde Granted FR2325189A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/615,483 US4018627A (en) 1975-09-22 1975-09-22 Method for fabricating semiconductor devices utilizing oxide protective layer

Publications (2)

Publication Number Publication Date
FR2325189A1 true FR2325189A1 (fr) 1977-04-15
FR2325189B1 FR2325189B1 (enExample) 1982-03-26

Family

ID=24465569

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7628166A Granted FR2325189A1 (fr) 1975-09-22 1976-09-20 Procede pour la fabrication de dispositifs semi-conducteurs munis d'une couche protectrice en oxyde

Country Status (6)

Country Link
US (1) US4018627A (enExample)
JP (1) JPS5239370A (enExample)
CA (1) CA1086867A (enExample)
DE (1) DE2640981C2 (enExample)
FR (1) FR2325189A1 (enExample)
GB (1) GB1554273A (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE30282E (en) * 1976-06-28 1980-05-27 Motorola, Inc. Double master mask process for integrated circuit manufacture
SU773793A1 (ru) * 1977-11-02 1980-10-23 Предприятие П/Я -6429 Способ изготовлени полупроводниковых интегральных бипол рных схем
US4118250A (en) * 1977-12-30 1978-10-03 International Business Machines Corporation Process for producing integrated circuit devices by ion implantation
US4233337A (en) * 1978-05-01 1980-11-11 International Business Machines Corporation Method for forming semiconductor contacts
US4208242A (en) * 1978-10-16 1980-06-17 Gte Laboratories Incorporated Method for color television picture tube aperture mask production employing PVA and removing the PVA by partial carmelizing and washing
US4243435A (en) * 1979-06-22 1981-01-06 International Business Machines Corporation Bipolar transistor fabrication process with an ion implanted emitter
EP0191504B1 (en) * 1980-04-10 1989-08-16 Massachusetts Institute Of Technology Method of producing sheets of crystalline material
DE3071288D1 (en) * 1980-09-19 1986-01-23 Ibm Deutschland Method of doping semiconductor devices by ion implantation
DE3115029A1 (de) * 1981-04-14 1982-11-04 Deutsche Itt Industries Gmbh, 7800 Freiburg "verfahren zur herstellung eines integrierten bipolaren planartransistors"
EP0062725B1 (de) * 1981-04-14 1984-09-12 Deutsche ITT Industries GmbH Verfahren zum Herstellen eines integrierten Planartransistors
DE3137813A1 (de) * 1981-09-23 1983-03-31 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen einer halbleiteranordnung
US4544416A (en) * 1983-08-26 1985-10-01 Texas Instruments Incorporated Passivation of silicon oxide during photoresist burnoff
US4648909A (en) * 1984-11-28 1987-03-10 Fairchild Semiconductor Corporation Fabrication process employing special masks for the manufacture of high speed bipolar analog integrated circuits
NL8501166A (nl) * 1985-04-23 1986-11-17 Philips Nv Elektro-dynamische omzetter van het isofase- of bandtype.
GB2237445B (en) * 1989-10-04 1994-01-12 Seagate Microelectron Ltd A semiconductor device fabrication process
US4987099A (en) * 1989-12-29 1991-01-22 North American Philips Corp. Method for selectively filling contacts or vias or various depths with CVD tungsten

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3793088A (en) * 1972-11-15 1974-02-19 Bell Telephone Labor Inc Compatible pnp and npn devices in an integrated circuit
US3933528A (en) * 1974-07-02 1976-01-20 Texas Instruments Incorporated Process for fabricating integrated circuits utilizing ion implantation

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3551221A (en) * 1967-11-29 1970-12-29 Nippon Electric Co Method of manufacturing a semiconductor integrated circuit
US3542551A (en) * 1968-07-01 1970-11-24 Trw Semiconductors Inc Method of etching patterns into solid state devices
US3560278A (en) * 1968-11-29 1971-02-02 Motorola Inc Alignment process for fabricating semiconductor devices
JPS5247989B2 (enExample) * 1973-06-18 1977-12-06
US3928081A (en) * 1973-10-26 1975-12-23 Signetics Corp Method for fabricating semiconductor devices using composite mask and ion implantation
US3928082A (en) * 1973-12-28 1975-12-23 Texas Instruments Inc Self-aligned transistor process
US3925105A (en) * 1974-07-02 1975-12-09 Texas Instruments Inc Process for fabricating integrated circuits utilizing ion implantation
US3920483A (en) * 1974-11-25 1975-11-18 Ibm Method of ion implantation through a photoresist mask

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3793088A (en) * 1972-11-15 1974-02-19 Bell Telephone Labor Inc Compatible pnp and npn devices in an integrated circuit
US3933528A (en) * 1974-07-02 1976-01-20 Texas Instruments Incorporated Process for fabricating integrated circuits utilizing ion implantation

Also Published As

Publication number Publication date
JPS5239370A (en) 1977-03-26
DE2640981C2 (de) 1987-02-19
US4018627A (en) 1977-04-19
CA1086867A (en) 1980-09-30
DE2640981A1 (de) 1977-03-24
FR2325189B1 (enExample) 1982-03-26
JPS5431951B2 (enExample) 1979-10-11
GB1554273A (en) 1979-10-17

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Legal Events

Date Code Title Description
ST Notification of lapse