FR2323227A1 - Procede de fabrication des dispositifs semiconducteurs avec commande de la capacite parasite particulierement appropries dans les reseaux de memoire a un seul transistor a effet de champ - Google Patents

Procede de fabrication des dispositifs semiconducteurs avec commande de la capacite parasite particulierement appropries dans les reseaux de memoire a un seul transistor a effet de champ

Info

Publication number
FR2323227A1
FR2323227A1 FR7623632A FR7623632A FR2323227A1 FR 2323227 A1 FR2323227 A1 FR 2323227A1 FR 7623632 A FR7623632 A FR 7623632A FR 7623632 A FR7623632 A FR 7623632A FR 2323227 A1 FR2323227 A1 FR 2323227A1
Authority
FR
France
Prior art keywords
effect transistor
semiconductor devices
control
manufacturing semiconductor
single field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7623632A
Other languages
English (en)
French (fr)
Other versions
FR2323227B1 (enExample
Inventor
Robert M Quinn
William J Schuele
Richard A Unis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2323227A1 publication Critical patent/FR2323227A1/fr
Application granted granted Critical
Publication of FR2323227B1 publication Critical patent/FR2323227B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only
    • H10P32/141—
    • H10P32/171—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/157—Special diffusion and profiles
FR7623632A 1975-09-05 1976-07-27 Procede de fabrication des dispositifs semiconducteurs avec commande de la capacite parasite particulierement appropries dans les reseaux de memoire a un seul transistor a effet de champ Granted FR2323227A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/610,722 US3975220A (en) 1975-09-05 1975-09-05 Diffusion control for controlling parasitic capacitor effects in single FET structure arrays

Publications (2)

Publication Number Publication Date
FR2323227A1 true FR2323227A1 (fr) 1977-04-01
FR2323227B1 FR2323227B1 (enExample) 1979-05-04

Family

ID=24446154

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7623632A Granted FR2323227A1 (fr) 1975-09-05 1976-07-27 Procede de fabrication des dispositifs semiconducteurs avec commande de la capacite parasite particulierement appropries dans les reseaux de memoire a un seul transistor a effet de champ

Country Status (4)

Country Link
US (1) US3975220A (enExample)
JP (1) JPS5232684A (enExample)
DE (1) DE2637310A1 (enExample)
FR (1) FR2323227A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4222816A (en) * 1978-12-26 1980-09-16 International Business Machines Corporation Method for reducing parasitic capacitance in integrated circuit structures
JPS5681968A (en) * 1979-12-07 1981-07-04 Toshiba Corp Manufacture of semiconductor device
KR0167271B1 (ko) * 1995-11-30 1998-12-15 문정환 비균등 도우프 채널 구조를 갖는 반도체소자의 제조방법
US6057203A (en) * 1998-06-19 2000-05-02 Programmable Silicon Solutions Integrated circuit capacitor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3574010A (en) * 1968-12-30 1971-04-06 Texas Instruments Inc Fabrication of metal insulator semiconductor field effect transistors
US3604107A (en) * 1969-04-17 1971-09-14 Collins Radio Co Doped oxide field effect transistors
US3690969A (en) * 1971-05-03 1972-09-12 Motorola Inc Method of doping semiconductor substrates
US3926694A (en) * 1972-07-24 1975-12-16 Signetics Corp Double diffused metal oxide semiconductor structure with isolated source and drain and method
JPS567304B2 (enExample) * 1972-08-28 1981-02-17
US3841926A (en) * 1973-01-02 1974-10-15 Ibm Integrated circuit fabrication process
US3811076A (en) * 1973-01-02 1974-05-14 Ibm Field effect transistor integrated circuit and memory
US3873372A (en) * 1973-07-09 1975-03-25 Ibm Method for producing improved transistor devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Also Published As

Publication number Publication date
JPS5232684A (en) 1977-03-12
US3975220A (en) 1976-08-17
DE2637310A1 (de) 1977-03-10
FR2323227B1 (enExample) 1979-05-04

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