JPS5232684A - Method of producing parasitic capacity controlled semiconductor device - Google Patents

Method of producing parasitic capacity controlled semiconductor device

Info

Publication number
JPS5232684A
JPS5232684A JP51092403A JP9240376A JPS5232684A JP S5232684 A JPS5232684 A JP S5232684A JP 51092403 A JP51092403 A JP 51092403A JP 9240376 A JP9240376 A JP 9240376A JP S5232684 A JPS5232684 A JP S5232684A
Authority
JP
Japan
Prior art keywords
semiconductor device
parasitic capacity
capacity controlled
controlled semiconductor
producing parasitic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51092403A
Other languages
English (en)
Japanese (ja)
Inventor
Emu Kuuin Robaato
Jiei Shiueru Uiriamu
Ei Yunisu Richiyaado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5232684A publication Critical patent/JPS5232684A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only
    • H10P32/141—
    • H10P32/171—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/157—Special diffusion and profiles

Landscapes

  • Semiconductor Memories (AREA)
  • Element Separation (AREA)
JP51092403A 1975-09-05 1976-08-04 Method of producing parasitic capacity controlled semiconductor device Pending JPS5232684A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/610,722 US3975220A (en) 1975-09-05 1975-09-05 Diffusion control for controlling parasitic capacitor effects in single FET structure arrays

Publications (1)

Publication Number Publication Date
JPS5232684A true JPS5232684A (en) 1977-03-12

Family

ID=24446154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51092403A Pending JPS5232684A (en) 1975-09-05 1976-08-04 Method of producing parasitic capacity controlled semiconductor device

Country Status (4)

Country Link
US (1) US3975220A (enExample)
JP (1) JPS5232684A (enExample)
DE (1) DE2637310A1 (enExample)
FR (1) FR2323227A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4222816A (en) * 1978-12-26 1980-09-16 International Business Machines Corporation Method for reducing parasitic capacitance in integrated circuit structures
JPS5681968A (en) * 1979-12-07 1981-07-04 Toshiba Corp Manufacture of semiconductor device
KR0167271B1 (ko) * 1995-11-30 1998-12-15 문정환 비균등 도우프 채널 구조를 갖는 반도체소자의 제조방법
US6057203A (en) * 1998-06-19 2000-05-02 Programmable Silicon Solutions Integrated circuit capacitor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3574010A (en) * 1968-12-30 1971-04-06 Texas Instruments Inc Fabrication of metal insulator semiconductor field effect transistors
US3604107A (en) * 1969-04-17 1971-09-14 Collins Radio Co Doped oxide field effect transistors
US3690969A (en) * 1971-05-03 1972-09-12 Motorola Inc Method of doping semiconductor substrates
US3926694A (en) * 1972-07-24 1975-12-16 Signetics Corp Double diffused metal oxide semiconductor structure with isolated source and drain and method
JPS567304B2 (enExample) * 1972-08-28 1981-02-17
US3841926A (en) * 1973-01-02 1974-10-15 Ibm Integrated circuit fabrication process
US3811076A (en) * 1973-01-02 1974-05-14 Ibm Field effect transistor integrated circuit and memory
US3873372A (en) * 1973-07-09 1975-03-25 Ibm Method for producing improved transistor devices

Also Published As

Publication number Publication date
FR2323227A1 (fr) 1977-04-01
US3975220A (en) 1976-08-17
DE2637310A1 (de) 1977-03-10
FR2323227B1 (enExample) 1979-05-04

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