FR2321191A1 - Semiconductor heterostructures - contg. a transition layer with two-way compsn. gradient - Google Patents

Semiconductor heterostructures - contg. a transition layer with two-way compsn. gradient

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Publication number
FR2321191A1
FR2321191A1 FR7624673A FR7624673A FR2321191A1 FR 2321191 A1 FR2321191 A1 FR 2321191A1 FR 7624673 A FR7624673 A FR 7624673A FR 7624673 A FR7624673 A FR 7624673A FR 2321191 A1 FR2321191 A1 FR 2321191A1
Authority
FR
France
Prior art keywords
compsn
substrate
gradient
main layer
transition layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7624673A
Other languages
French (fr)
Other versions
FR2321191B1 (en
Inventor
Vadim Nikolaevich Maslov
Oleg Evgenievich Korobov
Alla Naumovna Lupacheva
Alexandr Nikolaevich Vlasov
Viktor Vasilievich Myasoedov
Ellin Petrovich Bochkarev
Felix Aronovich Gimelfarb
Izidor Karlovich Bronshtein
Natalya Ivanovna Lukicheva
Evgeny Vladimirovich Sinitsyn
Jury Varnavovich Sokurenko
Elena
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PI REDKOMETALLICH
Original Assignee
PI REDKOMETALLICH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from SU752157007A external-priority patent/SU646389A1/en
Priority claimed from SU7502184251A external-priority patent/SU545214A1/en
Application filed by PI REDKOMETALLICH filed Critical PI REDKOMETALLICH
Publication of FR2321191A1 publication Critical patent/FR2321191A1/en
Application granted granted Critical
Publication of FR2321191B1 publication Critical patent/FR2321191B1/fr
Granted legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0004—Gaseous mixtures, e.g. polluted air
    • G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
    • G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
    • G01N33/0031—General constructional details of gas analysers, e.g. portable test equipment concerning the detector comprising two or more sensors, e.g. a sensor array
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
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    • H01L21/02612—Formation types
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
    • H01L29/221—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds including two or more compounds, e.g. alloys
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0029—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIBVI compounds
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    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
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  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Electrochemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Heterogeneous semiconductor structures comprise a substrate and a semiconducting main layer separated by a semiconducting transition layer. The main layer comprises a doped solid soln. ABxC1-X of semiconductor components AB and AC (0= x =1) with a compsn. gradient along its major axis. The substrate comprises a material with crystallographic properties close to those of AB. The transition layer comprises a doped solid soln. ABxC1-x with a compsn. gradient along its major axis and also a compsn. gradient perpendicular to its interface with the substrate. The latter gradient is such that the compsn. varies from that of the main layer (at the interface with the main layer) to that with the max. AB content (at the interface with the substrate). The structures can form the basis of tunable lasers, high-resolution semiconductor spectrometers, and various types of sensors (e.g. for hydrostatic manometers). Unlike heterostructures without the transition layer, the main layer and the substrate can have quite different crystallographic properties. This makes it possible to produce lasers with different and/or wider spectral ranges.
FR7624673A 1975-08-12 1976-08-12 Semiconductor heterostructures - contg. a transition layer with two-way compsn. gradient Granted FR2321191A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SU752157007A SU646389A1 (en) 1975-08-12 1975-08-12 Method of epitaxial growing of semiconductor monocrystals with composition gradient
SU7502184251A SU545214A1 (en) 1975-11-05 1975-11-05 Semiconductor pressure sensor
SU2339635 1976-03-25

Publications (2)

Publication Number Publication Date
FR2321191A1 true FR2321191A1 (en) 1977-03-11
FR2321191B1 FR2321191B1 (en) 1978-05-05

Family

ID=27356288

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7624673A Granted FR2321191A1 (en) 1975-08-12 1976-08-12 Semiconductor heterostructures - contg. a transition layer with two-way compsn. gradient

Country Status (3)

Country Link
DE (1) DE2635960A1 (en)
FR (1) FR2321191A1 (en)
NL (1) NL7608986A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1057845B (en) * 1954-03-10 1959-05-21 Licentia Gmbh Process for the production of monocrystalline semiconducting compounds
US3178313A (en) * 1961-07-05 1965-04-13 Bell Telephone Labor Inc Epitaxial growth of binary semiconductors
US3865625A (en) * 1972-10-13 1975-02-11 Bell Telephone Labor Inc Molecular beam epitaxy shadowing technique for fabricating dielectric optical waveguides

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1057845B (en) * 1954-03-10 1959-05-21 Licentia Gmbh Process for the production of monocrystalline semiconducting compounds
US3178313A (en) * 1961-07-05 1965-04-13 Bell Telephone Labor Inc Epitaxial growth of binary semiconductors
US3865625A (en) * 1972-10-13 1975-02-11 Bell Telephone Labor Inc Molecular beam epitaxy shadowing technique for fabricating dielectric optical waveguides

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
*REVUE US IBM TECHNICAL DISCLOSURE BULLETIN, VOL. 12, NO. 10, MARS 1970 "OPTICAL COMMUNICATION LINK" J.M.WOODALL, PAGES 1584-1581 *
REVUE US IBM TECHNICAL DISCLOSURE BULLETIN, VOL. 15, NO. 2, JUILLET 1972, "FABRICATION FOR A TUNABLE MONOCHROMATIC INJECTION LASER" R.LUDEKE ET L.ESAKI, PAGES 546-547 *

Also Published As

Publication number Publication date
NL7608986A (en) 1977-02-15
FR2321191B1 (en) 1978-05-05
DE2635960A1 (en) 1977-03-03

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