FR2319972A1 - Procede de fabrication de diodes du type " pin " et diodes dites a " mesa partielle " obtenues par ledit procede - Google Patents

Procede de fabrication de diodes du type " pin " et diodes dites a " mesa partielle " obtenues par ledit procede

Info

Publication number
FR2319972A1
FR2319972A1 FR7524147A FR7524147A FR2319972A1 FR 2319972 A1 FR2319972 A1 FR 2319972A1 FR 7524147 A FR7524147 A FR 7524147A FR 7524147 A FR7524147 A FR 7524147A FR 2319972 A1 FR2319972 A1 FR 2319972A1
Authority
FR
France
Prior art keywords
diodes
pin
cuts
manufacturing
mesa
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7524147A
Other languages
English (en)
French (fr)
Other versions
FR2319972B1 (OSRAM
Inventor
Raymond Henry
Michel Calligaro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7524147A priority Critical patent/FR2319972A1/fr
Publication of FR2319972A1 publication Critical patent/FR2319972A1/fr
Application granted granted Critical
Publication of FR2319972B1 publication Critical patent/FR2319972B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10P52/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H10P54/00—

Landscapes

  • Light Receiving Elements (AREA)
FR7524147A 1975-08-01 1975-08-01 Procede de fabrication de diodes du type " pin " et diodes dites a " mesa partielle " obtenues par ledit procede Granted FR2319972A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7524147A FR2319972A1 (fr) 1975-08-01 1975-08-01 Procede de fabrication de diodes du type " pin " et diodes dites a " mesa partielle " obtenues par ledit procede

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7524147A FR2319972A1 (fr) 1975-08-01 1975-08-01 Procede de fabrication de diodes du type " pin " et diodes dites a " mesa partielle " obtenues par ledit procede

Publications (2)

Publication Number Publication Date
FR2319972A1 true FR2319972A1 (fr) 1977-02-25
FR2319972B1 FR2319972B1 (OSRAM) 1980-03-28

Family

ID=9158682

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7524147A Granted FR2319972A1 (fr) 1975-08-01 1975-08-01 Procede de fabrication de diodes du type " pin " et diodes dites a " mesa partielle " obtenues par ledit procede

Country Status (1)

Country Link
FR (1) FR2319972A1 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001018879A1 (de) * 1999-09-08 2001-03-15 Robert Bosch Gmbh Halbleiterbauelement und verfahren zur herstellung des halbleiterbauelements

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001018879A1 (de) * 1999-09-08 2001-03-15 Robert Bosch Gmbh Halbleiterbauelement und verfahren zur herstellung des halbleiterbauelements

Also Published As

Publication number Publication date
FR2319972B1 (OSRAM) 1980-03-28

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Legal Events

Date Code Title Description
ST Notification of lapse