FR2316791A1 - Field effect transistor flip flop sensor - is independent of threshold and threshold differences eliminated between two branches - Google Patents

Field effect transistor flip flop sensor - is independent of threshold and threshold differences eliminated between two branches

Info

Publication number
FR2316791A1
FR2316791A1 FR7615575A FR7615575A FR2316791A1 FR 2316791 A1 FR2316791 A1 FR 2316791A1 FR 7615575 A FR7615575 A FR 7615575A FR 7615575 A FR7615575 A FR 7615575A FR 2316791 A1 FR2316791 A1 FR 2316791A1
Authority
FR
France
Prior art keywords
threshold
flip
flop
branches
eliminated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7615575A
Other languages
French (fr)
Other versions
FR2316791B1 (en
Inventor
Dominic P Spampinato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2316791A1 publication Critical patent/FR2316791A1/en
Application granted granted Critical
Publication of FR2316791B1 publication Critical patent/FR2316791B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356017—Bistable circuits using additional transistors in the input circuit
    • H03K3/356052—Bistable circuits using additional transistors in the input circuit using pass gates
    • H03K3/35606—Bistable circuits using additional transistors in the input circuit using pass gates with synchronous operation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16504—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed
    • G01R19/16519—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed using FET's
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356069—Bistable circuits using additional transistors in the feedback circuit
    • H03K3/356078—Bistable circuits using additional transistors in the feedback circuit with synchronous operation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356086—Bistable circuits with additional means for controlling the main nodes
    • H03K3/356095—Bistable circuits with additional means for controlling the main nodes with synchronous operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Shift Register Type Memory (AREA)

Abstract

An f.e.t. flip flop sensor is designed to be threshold-independent. The threshold differences between the two branches are eliminated. A first and second transistor are connected in series to each of the two flip-flop transistors. The cross-coupling between the connecting point of the first and second transistor of the one branch runs with the gate electrode of the flip-flop transistor of the other branch. The flip-flop (10) has six active switching elements (12, 14, 16, 18, 20, 22) which consist of metal oxide semiconductor field-effect transistors. The flip-flop (10) is connected to a number of storage cells.
FR7615575A 1975-06-30 1976-05-17 Field effect transistor flip flop sensor - is independent of threshold and threshold differences eliminated between two branches Granted FR2316791A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US59198375A 1975-06-30 1975-06-30

Publications (2)

Publication Number Publication Date
FR2316791A1 true FR2316791A1 (en) 1977-01-28
FR2316791B1 FR2316791B1 (en) 1978-11-17

Family

ID=24368774

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7615575A Granted FR2316791A1 (en) 1975-06-30 1976-05-17 Field effect transistor flip flop sensor - is independent of threshold and threshold differences eliminated between two branches

Country Status (4)

Country Link
JP (1) JPS525248A (en)
DE (1) DE2624228A1 (en)
FR (1) FR2316791A1 (en)
IT (1) IT1064304B (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3683206A (en) * 1969-01-31 1972-08-08 Licentia Gmbh Electrical storage element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3683206A (en) * 1969-01-31 1972-08-08 Licentia Gmbh Electrical storage element

Also Published As

Publication number Publication date
JPS525248A (en) 1977-01-14
IT1064304B (en) 1985-02-18
FR2316791B1 (en) 1978-11-17
DE2624228A1 (en) 1977-02-03

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Legal Events

Date Code Title Description
ST Notification of lapse