IT1064304B - DETECTION AMPLIFIER INCLUDING A THRESHOLD CIRCUIT INDEPENDENT OF THE THRESHOLD - Google Patents

DETECTION AMPLIFIER INCLUDING A THRESHOLD CIRCUIT INDEPENDENT OF THE THRESHOLD

Info

Publication number
IT1064304B
IT1064304B IT2394376A IT2394376A IT1064304B IT 1064304 B IT1064304 B IT 1064304B IT 2394376 A IT2394376 A IT 2394376A IT 2394376 A IT2394376 A IT 2394376A IT 1064304 B IT1064304 B IT 1064304B
Authority
IT
Italy
Prior art keywords
threshold
amplifier including
detection amplifier
circuit independent
threshold circuit
Prior art date
Application number
IT2394376A
Other languages
Italian (it)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1064304B publication Critical patent/IT1064304B/en

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356017Bistable circuits using additional transistors in the input circuit
    • H03K3/356052Bistable circuits using additional transistors in the input circuit using pass gates
    • H03K3/35606Bistable circuits using additional transistors in the input circuit using pass gates with synchronous operation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16504Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed
    • G01R19/16519Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed using FET's
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356069Bistable circuits using additional transistors in the feedback circuit
    • H03K3/356078Bistable circuits using additional transistors in the feedback circuit with synchronous operation
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356086Bistable circuits with additional means for controlling the main nodes
    • H03K3/356095Bistable circuits with additional means for controlling the main nodes with synchronous operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Shift Register Type Memory (AREA)
  • Read Only Memory (AREA)
IT2394376A 1975-06-30 1976-06-04 DETECTION AMPLIFIER INCLUDING A THRESHOLD CIRCUIT INDEPENDENT OF THE THRESHOLD IT1064304B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US59198375A 1975-06-30 1975-06-30

Publications (1)

Publication Number Publication Date
IT1064304B true IT1064304B (en) 1985-02-18

Family

ID=24368774

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2394376A IT1064304B (en) 1975-06-30 1976-06-04 DETECTION AMPLIFIER INCLUDING A THRESHOLD CIRCUIT INDEPENDENT OF THE THRESHOLD

Country Status (4)

Country Link
JP (1) JPS525248A (en)
DE (1) DE2624228A1 (en)
FR (1) FR2316791A1 (en)
IT (1) IT1064304B (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1904787B2 (en) * 1969-01-31 1977-07-21 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt ELECTRICAL STORAGE ELEMENT AND OPERATION OF THE SAME

Also Published As

Publication number Publication date
JPS525248A (en) 1977-01-14
DE2624228A1 (en) 1977-02-03
FR2316791B1 (en) 1978-11-17
FR2316791A1 (en) 1977-01-28

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