FR2315785B1 - - Google Patents

Info

Publication number
FR2315785B1
FR2315785B1 FR7615955A FR7615955A FR2315785B1 FR 2315785 B1 FR2315785 B1 FR 2315785B1 FR 7615955 A FR7615955 A FR 7615955A FR 7615955 A FR7615955 A FR 7615955A FR 2315785 B1 FR2315785 B1 FR 2315785B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7615955A
Other languages
French (fr)
Other versions
FR2315785A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US05/589,277 external-priority patent/US4033796A/en
Priority claimed from US05/589,120 external-priority patent/US3978428A/en
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of FR2315785A1 publication Critical patent/FR2315785A1/en
Application granted granted Critical
Publication of FR2315785B1 publication Critical patent/FR2315785B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2237—Buried stripe structure with a non-planar active layer
FR7615955A 1975-06-23 1976-05-26 INJECTION LASER INCLUDING A BURIED HETEROSTRUCTURE DIODE Granted FR2315785A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US05/589,277 US4033796A (en) 1975-06-23 1975-06-23 Method of making buried-heterostructure diode injection laser
US05/589,120 US3978428A (en) 1975-06-23 1975-06-23 Buried-heterostructure diode injection laser

Publications (2)

Publication Number Publication Date
FR2315785A1 FR2315785A1 (en) 1977-01-21
FR2315785B1 true FR2315785B1 (en) 1983-03-25

Family

ID=27080453

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7615955A Granted FR2315785A1 (en) 1975-06-23 1976-05-26 INJECTION LASER INCLUDING A BURIED HETEROSTRUCTURE DIODE

Country Status (7)

Country Link
JP (1) JPS523392A (en)
AU (1) AU501061B2 (en)
CA (1) CA1065460A (en)
DE (1) DE2626775C2 (en)
FR (1) FR2315785A1 (en)
GB (1) GB1546729A (en)
NL (1) NL7606798A (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5234686A (en) * 1975-09-10 1977-03-16 Sumitomo Electric Ind Ltd Double hetero junction type semiconductor laser element and its manufa cturing process
GB1530323A (en) * 1975-12-22 1978-10-25 Standard Telephones Cables Ltd Semiconductor waveguide structures
US4326176A (en) * 1976-04-16 1982-04-20 Hitachi, Ltd. Semiconductor laser device
DE2757470A1 (en) * 1977-12-22 1979-07-05 Siemens Ag METHOD OF MANUFACTURING A SEMICONDUCTOR ARRANGEMENT
CA1127282A (en) * 1978-05-22 1982-07-06 Takashi Sugino Semiconductor laser and method of making the same
GB2046983B (en) * 1979-01-18 1983-03-16 Nippon Electric Co Semiconductor lasers
JPS55158691A (en) * 1979-05-30 1980-12-10 Sumitomo Electric Ind Ltd Semiconductor light emitting device manufacture thereof
JPS56161688A (en) * 1980-05-16 1981-12-12 Matsushita Electric Ind Co Ltd Semiconductor laser
JPS5910039Y2 (en) * 1980-03-18 1984-03-29 大日本印刷株式会社 Product display box
JPS5723292A (en) * 1980-07-16 1982-02-06 Sony Corp Semiconductor laser device and manufacture thereof
JPS5763885A (en) * 1980-10-06 1982-04-17 Mitsubishi Electric Corp Semiconductor laser device
JPS5791574A (en) * 1980-11-28 1982-06-07 Nec Corp Light emitting diode
JPS5792880A (en) * 1980-12-02 1982-06-09 Toshiba Corp Light emitting diode
JPS57162484A (en) * 1981-03-31 1982-10-06 Fujitsu Ltd Semiconductor luminous device
JPS58225683A (en) * 1982-06-22 1983-12-27 Mitsubishi Electric Corp Semiconductor laser
GB2123604B (en) * 1982-06-29 1985-12-18 Standard Telephones Cables Ltd Injection laser manufacture
JPS599990A (en) * 1982-07-07 1984-01-19 Mitsubishi Electric Corp Manufacture of semiconductor laser
JPS6042890A (en) * 1983-08-18 1985-03-07 Mitsubishi Electric Corp Surface light emitting type semiconductor laser and manufacture thereof
JP2553580B2 (en) * 1987-08-19 1996-11-13 三菱電機株式会社 Semiconductor laser device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2859178A (en) * 1955-12-19 1958-11-04 Exxon Research Engineering Co Method of lubricating bearings
GB1273284A (en) * 1970-10-13 1972-05-03 Standard Telephones Cables Ltd Improvements in or relating to injection lasers
IT963303B (en) * 1971-07-29 1974-01-10 Licentia Gmbh SEMICONDUCTOR LASER
JPS51114887A (en) * 1975-04-01 1976-10-08 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Also Published As

Publication number Publication date
DE2626775A1 (en) 1976-12-30
AU1521076A (en) 1978-01-05
GB1546729A (en) 1979-05-31
DE2626775C2 (en) 1983-04-21
FR2315785A1 (en) 1977-01-21
NL7606798A (en) 1976-12-27
CA1065460A (en) 1979-10-30
AU501061B2 (en) 1979-06-07
JPS523392A (en) 1977-01-11
JPS5653237B2 (en) 1981-12-17

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Legal Events

Date Code Title Description
ST Notification of lapse