FR2313772A1 - Revetement antioxydant pour elements en cuivre de liaison d'ensemble par thermocompression de dispositifs semi-conducteurs - Google Patents

Revetement antioxydant pour elements en cuivre de liaison d'ensemble par thermocompression de dispositifs semi-conducteurs

Info

Publication number
FR2313772A1
FR2313772A1 FR7616183A FR7616183A FR2313772A1 FR 2313772 A1 FR2313772 A1 FR 2313772A1 FR 7616183 A FR7616183 A FR 7616183A FR 7616183 A FR7616183 A FR 7616183A FR 2313772 A1 FR2313772 A1 FR 2313772A1
Authority
FR
France
Prior art keywords
antioxidizing
coating
semiconductor devices
assembly connection
copper elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7616183A
Other languages
English (en)
Other versions
FR2313772B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of FR2313772A1 publication Critical patent/FR2313772A1/fr
Application granted granted Critical
Publication of FR2313772B1 publication Critical patent/FR2313772B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/86—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using tape automated bonding [TAB]
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
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    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
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    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147—Copper [Cu] as principal constituent
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    • H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
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    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
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    • H01L2924/01023—Vanadium [V]
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    • H01L2924/01029—Copper [Cu]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/901—Printed circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49121—Beam lead frame or beam lead device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
FR7616183A 1975-06-02 1976-05-28 Revetement antioxydant pour elements en cuivre de liaison d'ensemble par thermocompression de dispositifs semi-conducteurs Granted FR2313772A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/582,634 US4188438A (en) 1975-06-02 1975-06-02 Antioxidant coating of copper parts for thermal compression gang bonding of semiconductive devices

Publications (2)

Publication Number Publication Date
FR2313772A1 true FR2313772A1 (fr) 1976-12-31
FR2313772B1 FR2313772B1 (fr) 1982-04-16

Family

ID=24329895

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7616183A Granted FR2313772A1 (fr) 1975-06-02 1976-05-28 Revetement antioxydant pour elements en cuivre de liaison d'ensemble par thermocompression de dispositifs semi-conducteurs

Country Status (7)

Country Link
US (1) US4188438A (fr)
JP (1) JPS6025898B2 (fr)
BR (1) BR7603302A (fr)
CA (1) CA1045251A (fr)
DE (1) DE2624292A1 (fr)
FR (1) FR2313772A1 (fr)
GB (1) GB1529518A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2480034A1 (fr) * 1980-04-04 1981-10-09 Thomson Csf Procede de fabrication et de montage d'une pastille semi-conductrice et structure obtenue
EP0176746A1 (fr) * 1984-09-20 1986-04-09 Siemens Aktiengesellschaft Fabrication de plots de contact en cuivre pour circuits intégrés
FR2591802A1 (fr) * 1985-12-16 1987-06-19 Nat Semiconductor Corp Protection contre l'oxydation de pastilles de connexion en cuivre au moyen de palladium
EP0473976A1 (fr) * 1990-08-23 1992-03-11 Siemens Aktiengesellschaft Procédé et dispositif pour attacher une pièce semiconductrice sur une bande de support

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JPS53123074A (en) * 1977-04-01 1978-10-27 Nec Corp Semiconductor device
US4293637A (en) * 1977-05-31 1981-10-06 Matsushita Electric Industrial Co., Ltd. Method of making metal electrode of semiconductor device
US4273859A (en) * 1979-12-31 1981-06-16 Honeywell Information Systems Inc. Method of forming solder bump terminals on semiconductor elements
US4331740A (en) * 1980-04-14 1982-05-25 National Semiconductor Corporation Gang bonding interconnect tape process and structure for semiconductor device automatic assembly
JPS5925387B2 (ja) * 1980-06-10 1984-06-16 株式会社東芝 半導体装置
US4560826A (en) * 1983-12-29 1985-12-24 Amp Incorporated Hermetically sealed chip carrier
JPS6189643A (ja) * 1984-10-09 1986-05-07 Toshiba Corp 半導体装置及びその製造方法
US5008997A (en) * 1988-09-16 1991-04-23 National Semiconductor Gold/tin eutectic bonding for tape automated bonding process
US5120418A (en) * 1989-08-25 1992-06-09 International Business Machines Corporation Lead frame plating apparatus for thermocompression bonding
US5006917A (en) * 1989-08-25 1991-04-09 International Business Machines Corporation Thermocompression bonding in integrated circuit packaging
US5148261A (en) * 1989-08-25 1992-09-15 International Business Machines Corporation Thermocompression bonding in integrated circuit packaging
US5135155A (en) * 1989-08-25 1992-08-04 International Business Machines Corporation Thermocompression bonding in integrated circuit packaging
US5242569A (en) * 1989-08-25 1993-09-07 International Business Machines Corporation Thermocompression bonding in integrated circuit packaging
US5130275A (en) * 1990-07-02 1992-07-14 Digital Equipment Corp. Post fabrication processing of semiconductor chips
JPH0714962A (ja) * 1993-04-28 1995-01-17 Mitsubishi Shindoh Co Ltd リードフレーム材およびリードフレーム
JP2783133B2 (ja) * 1993-09-29 1998-08-06 松下電器産業株式会社 ワイヤボンディング前処理方法
US5548091A (en) * 1993-10-26 1996-08-20 Tessera, Inc. Semiconductor chip connection components with adhesives and methods for bonding to the chip
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US5597470A (en) * 1995-06-18 1997-01-28 Tessera, Inc. Method for making a flexible lead for a microelectronic device
JPH09241862A (ja) * 1996-03-01 1997-09-16 Murata Mfg Co Ltd 銅粉末及び銅ペースト並びにセラミック電子部品
US6033930A (en) * 1996-07-23 2000-03-07 Matsushita Electronics Corporation Lead frame carrying method and lead frame carrying apparatus
CN1148794C (zh) * 1998-02-25 2004-05-05 时至准钟表股份有限公司 半导体装置
WO2000021126A1 (fr) * 1998-10-05 2000-04-13 Kulicke & Soffa Investments, Inc. Protection de la surface des plots de connexion cuivre des semi-conducteurs
US6427904B1 (en) * 1999-01-29 2002-08-06 Clad Metals Llc Bonding of dissimilar metals
KR100863388B1 (ko) * 1999-06-28 2008-10-13 인피콘 게엠베하 전자 소자 및 그 제조방법
US20030137032A1 (en) * 2000-05-01 2003-07-24 Abbott Donald C. Pre-finished leadframe for semiconductor devices and method fo fabrication
DE10063914A1 (de) 2000-12-20 2002-07-25 Pac Tech Gmbh Kontakthöckeraufbau zur Herstellung eines Verbindungsaufbaus zwischen Substratanschlussflächen
US6890834B2 (en) * 2001-06-11 2005-05-10 Matsushita Electric Industrial Co., Ltd. Electronic device and method for manufacturing the same
US20030159941A1 (en) * 2002-02-11 2003-08-28 Applied Materials, Inc. Additives for electroplating solution
US7088004B2 (en) * 2002-11-27 2006-08-08 International Rectifier Corporation Flip-chip device having conductive connectors
US7271497B2 (en) * 2003-03-10 2007-09-18 Fairchild Semiconductor Corporation Dual metal stud bumping for flip chip applications
KR100526193B1 (ko) * 2003-10-15 2005-11-03 삼성전자주식회사 다이 본더 설비 및 이를 이용한 반도체 칩 부착방법
US20050268991A1 (en) * 2004-06-03 2005-12-08 Enthone Inc. Corrosion resistance enhancement of tin surfaces
US9172167B2 (en) * 2004-11-20 2015-10-27 Al Cop Llc Junction failure inhibiting connector
US8169081B1 (en) 2007-12-27 2012-05-01 Volterra Semiconductor Corporation Conductive routings in integrated circuits using under bump metallization
US8205766B2 (en) * 2009-05-20 2012-06-26 The Bergquist Company Method for packaging thermal interface materials
US8430264B2 (en) * 2009-05-20 2013-04-30 The Bergquist Company Method for packaging thermal interface materials
WO2010138493A1 (fr) 2009-05-28 2010-12-02 Hsio Technologies, Llc Interconnexion électrique montée en surface à efficacité élevée
US9276336B2 (en) 2009-05-28 2016-03-01 Hsio Technologies, Llc Metalized pad to electrical contact interface
US9536815B2 (en) 2009-05-28 2017-01-03 Hsio Technologies, Llc Semiconductor socket with direct selective metalization
WO2010141266A1 (fr) * 2009-06-02 2010-12-09 Hsio Technologies, Llc Boîtier de semi-conducteur à sorties périphériques avec circuit imprimé adaptable
US8987886B2 (en) 2009-06-02 2015-03-24 Hsio Technologies, Llc Copper pillar full metal via electrical circuit structure
US9232654B2 (en) 2009-06-02 2016-01-05 Hsio Technologies, Llc High performance electrical circuit structure
WO2010141298A1 (fr) 2009-06-02 2010-12-09 Hsio Technologies, Llc Contacts électriques polymère-métal composites
WO2010141295A1 (fr) 2009-06-02 2010-12-09 Hsio Technologies, Llc Circuit souple imprimé adaptable
US9930775B2 (en) 2009-06-02 2018-03-27 Hsio Technologies, Llc Copper pillar full metal via electrical circuit structure
US9318862B2 (en) 2009-06-02 2016-04-19 Hsio Technologies, Llc Method of making an electronic interconnect
US9196980B2 (en) 2009-06-02 2015-11-24 Hsio Technologies, Llc High performance surface mount electrical interconnect with external biased normal force loading
WO2012074963A1 (fr) 2010-12-01 2012-06-07 Hsio Technologies, Llc Interconnexion électrique pour montage en surface de haute performance
US9613841B2 (en) 2009-06-02 2017-04-04 Hsio Technologies, Llc Area array semiconductor device package interconnect structure with optional package-to-package or flexible circuit to package connection
WO2012078493A1 (fr) 2010-12-06 2012-06-14 Hsio Technologies, Llc Support d'interconnexion électrique de dispositif à circuit intégré
US8525346B2 (en) 2009-06-02 2013-09-03 Hsio Technologies, Llc Compliant conductive nano-particle electrical interconnect
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US4188438A (en) 1980-02-12
JPS6025898B2 (ja) 1985-06-20
GB1529518A (en) 1978-10-25
DE2624292A1 (de) 1976-12-23
BR7603302A (pt) 1977-02-15
JPS527679A (en) 1977-01-20
CA1045251A (fr) 1978-12-26
FR2313772B1 (fr) 1982-04-16
DE2624292C2 (fr) 1989-07-27

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