FR2307335A1 - Transistor a effet de champ bistable a mode multiplication et memoire utilisant celui-ci - Google Patents

Transistor a effet de champ bistable a mode multiplication et memoire utilisant celui-ci

Info

Publication number
FR2307335A1
FR2307335A1 FR7605142A FR7605142A FR2307335A1 FR 2307335 A1 FR2307335 A1 FR 2307335A1 FR 7605142 A FR7605142 A FR 7605142A FR 7605142 A FR7605142 A FR 7605142A FR 2307335 A1 FR2307335 A1 FR 2307335A1
Authority
FR
France
Prior art keywords
memory
same
effect transistor
multiplication mode
bistable field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7605142A
Other languages
English (en)
French (fr)
Other versions
FR2307335B1 (OSRAM
Inventor
Huntington W Curtis
Roger L Verkuil
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2307335A1 publication Critical patent/FR2307335A1/fr
Application granted granted Critical
Publication of FR2307335B1 publication Critical patent/FR2307335B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Non-Volatile Memory (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Memories (AREA)
FR7605142A 1975-04-07 1976-02-17 Transistor a effet de champ bistable a mode multiplication et memoire utilisant celui-ci Granted FR2307335A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/565,326 US3974486A (en) 1975-04-07 1975-04-07 Multiplication mode bistable field effect transistor and memory utilizing same

Publications (2)

Publication Number Publication Date
FR2307335A1 true FR2307335A1 (fr) 1976-11-05
FR2307335B1 FR2307335B1 (OSRAM) 1978-05-19

Family

ID=24258122

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7605142A Granted FR2307335A1 (fr) 1975-04-07 1976-02-17 Transistor a effet de champ bistable a mode multiplication et memoire utilisant celui-ci

Country Status (6)

Country Link
US (1) US3974486A (OSRAM)
JP (1) JPS51123078A (OSRAM)
DE (1) DE2613692A1 (OSRAM)
FR (1) FR2307335A1 (OSRAM)
GB (1) GB1543074A (OSRAM)
IT (1) IT1064162B (OSRAM)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4070652A (en) * 1975-11-14 1978-01-24 Westinghouse Electric Corporation Acousto-electric signal convolver, correlator and memory
JPS586234B2 (ja) * 1977-11-17 1983-02-03 富士通株式会社 半導体記憶装置
WO1979000474A1 (en) * 1978-01-03 1979-07-26 D Erb A stratified charge memory device
US4199774A (en) * 1978-09-18 1980-04-22 The Board Of Trustees Of The Leland Stanford Junior University Monolithic semiconductor switching device
FR2602367B1 (fr) * 1986-07-30 1988-10-07 Bull Sa Procede de memorisation d'un bit d'information dans une cellule de memoire vive statique integree du type mos, transistor pour la mise en oeuvre du procede et memoire en resultant
US5162877A (en) * 1987-01-27 1992-11-10 Fujitsu Limited Semiconductor integrated circuit device and method of producing same
KR920702028A (ko) * 1989-07-18 1992-08-12 하라 레이노스께 반도체 장치
EP1111620A3 (en) * 1999-12-22 2003-01-08 National University of Ireland, Cork A negative resistance device
US6594193B2 (en) 2000-06-22 2003-07-15 Progressent Technologies, Inc. Charge pump for negative differential resistance transistor
US6559470B2 (en) 2000-06-22 2003-05-06 Progressed Technologies, Inc. Negative differential resistance field effect transistor (NDR-FET) and circuits using the same
US6724655B2 (en) 2000-06-22 2004-04-20 Progressant Technologies, Inc. Memory cell using negative differential resistance field effect transistors
JP2002289790A (ja) * 2001-03-27 2002-10-04 Sanyo Electric Co Ltd 化合物半導体スイッチ回路装置
US6894327B1 (en) 2001-12-21 2005-05-17 Progressant Technologies, Inc. Negative differential resistance pull up element
US7453083B2 (en) * 2001-12-21 2008-11-18 Synopsys, Inc. Negative differential resistance field effect transistor for implementing a pull up element in a memory cell
US6567292B1 (en) 2002-06-28 2003-05-20 Progressant Technologies, Inc. Negative differential resistance (NDR) element and memory with reduced soft error rate
US6912151B2 (en) * 2002-06-28 2005-06-28 Synopsys, Inc. Negative differential resistance (NDR) based memory device with reduced body effects
US6795337B2 (en) * 2002-06-28 2004-09-21 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US6847562B2 (en) * 2002-06-28 2005-01-25 Progressant Technologies, Inc. Enhanced read and write methods for negative differential resistance (NDR) based memory device
US7098472B2 (en) * 2002-06-28 2006-08-29 Progressant Technologies, Inc. Negative differential resistance (NDR) elements and memory device using the same
US6853035B1 (en) 2002-06-28 2005-02-08 Synopsys, Inc. Negative differential resistance (NDR) memory device with reduced soft error rate
US7095659B2 (en) * 2002-06-28 2006-08-22 Progressant Technologies, Inc. Variable voltage supply bias and methods for negative differential resistance (NDR) based memory device
US6864104B2 (en) * 2002-06-28 2005-03-08 Progressant Technologies, Inc. Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects
US6806117B2 (en) * 2002-12-09 2004-10-19 Progressant Technologies, Inc. Methods of testing/stressing a charge trapping device
US6849483B2 (en) * 2002-12-09 2005-02-01 Progressant Technologies, Inc. Charge trapping device and method of forming the same
US7012833B2 (en) * 2002-12-09 2006-03-14 Progressant Technologies, Inc. Integrated circuit having negative differential resistance (NDR) devices with varied peak-to-valley ratios (PVRs)
US6979580B2 (en) * 2002-12-09 2005-12-27 Progressant Technologies, Inc. Process for controlling performance characteristics of a negative differential resistance (NDR) device
US6812084B2 (en) * 2002-12-09 2004-11-02 Progressant Technologies, Inc. Adaptive negative differential resistance device
US6980467B2 (en) * 2002-12-09 2005-12-27 Progressant Technologies, Inc. Method of forming a negative differential resistance device
US7005711B2 (en) * 2002-12-20 2006-02-28 Progressant Technologies, Inc. N-channel pull-up element and logic circuit
US9667246B2 (en) * 2013-10-04 2017-05-30 Peregrine Semiconductor Corporation Optimized RF switching device architecture for impedance control applications

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2043065A1 (de) * 1970-08-31 1972-03-02 Merk H Halbleiter Speicher

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3528035A (en) * 1966-07-11 1970-09-08 Bell Telephone Labor Inc Two-valley semiconductive devices
US3538400A (en) * 1967-07-31 1970-11-03 Nippon Electric Co Semiconductor gunn effect switching element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2043065A1 (de) * 1970-08-31 1972-03-02 Merk H Halbleiter Speicher

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
REVUE DT ZEITSCHRIFT FUR ANGEWANDTE PHYSIK, VOL. 29, NO. 3, 1970, "LADUNGSTRAGERMULTIPLIKATION BEI MIS TRANSISTOREN", H.E.LONGO, PAGES 166-168) *
REVUE US ELECTRONICS, VOL. 38, NO. 5, 26 JUILLET 1965, "NEGATIVE RESISTANCE IN FET'S AN AID OR AN AILMENT", CARL DAVID TODD, PAGES 57-60 DOCUMENT CITE DANS LE TEXTE DE LA DEMANDE DE BREVET EXAMINEE *

Also Published As

Publication number Publication date
DE2613692A1 (de) 1976-10-21
FR2307335B1 (OSRAM) 1978-05-19
JPS5534586B2 (OSRAM) 1980-09-08
JPS51123078A (en) 1976-10-27
US3974486A (en) 1976-08-10
GB1543074A (en) 1979-03-28
IT1064162B (it) 1985-02-18

Similar Documents

Publication Publication Date Title
FR2307335A1 (fr) Transistor a effet de champ bistable a mode multiplication et memoire utilisant celui-ci
FR2325149A1 (fr) Memoire a transistors a effet de champ
FR2403622B1 (fr) Amplificateur de detection utilisable avec une memoire a transistor a effet de champ
FR2316740A1 (fr) Structure de circuit integre en technologie mnos avec des transistors a effet de champ a seuil fixe et variable
FR2298160A1 (fr) Memoire semi-conductrice
NO771977L (no) Dobbeltinjeksjonsanordning.
NL7606176A (nl) Elektronische sluitinrichting.
NL7603420A (nl) Paneel en het bijbehorende bevestigingsmiddel.
NL7601304A (nl) Alleen-lees geheugen met halfgeleiders.
NL178369C (nl) Geheugeninrichting.
NL7712820A (nl) Dynamische geheugeninrichting.
NL7700880A (nl) Naar willekeur toegankelijk geheugen met junctieveldeffekttransistoren.
NL7513192A (nl) Geheugeninrichting met twee complementaire veld- effecttransistoren.
NL145978B (nl) Geheugencel met een elektronisch bistabiel geheugenelement.
BE777996A (fr) Dispositif a memoire effacable a effet de champ
DK140581B (da) Lynlås med en oplukningsanordning.
BE838420A (fr) Dispositif de memoire
NL7713948A (nl) Vermogenstransistor.
NL7712819A (nl) Dynamische geheugeninrichting.
FR2309952A1 (fr) Cellule de memoire statique a trois transistors
NL7810256A (nl) Permanent geheugen voorzien van veldeffecttransistors.
SE7710006L (sv) Minnesanordning
NL7703260A (nl) Geheugen voorzien van dummy cellen.
TR19281A (tr) Fungisid ve nematosid maddeler
FR2309953A1 (fr) Memoire a semi-conducteur utilisant des transistors a effet de champ complementaires

Legal Events

Date Code Title Description
ST Notification of lapse