FR2280976A1 - Procede de fabrication d'un dispositif semi-conducteur - Google Patents

Procede de fabrication d'un dispositif semi-conducteur

Info

Publication number
FR2280976A1
FR2280976A1 FR7523541A FR7523541A FR2280976A1 FR 2280976 A1 FR2280976 A1 FR 2280976A1 FR 7523541 A FR7523541 A FR 7523541A FR 7523541 A FR7523541 A FR 7523541A FR 2280976 A1 FR2280976 A1 FR 2280976A1
Authority
FR
France
Prior art keywords
temperature
silicon
per minute
manufacturing
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7523541A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2280976A1 publication Critical patent/FR2280976A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR7523541A 1974-08-02 1975-07-28 Procede de fabrication d'un dispositif semi-conducteur Withdrawn FR2280976A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US49417874A 1974-08-02 1974-08-02

Publications (1)

Publication Number Publication Date
FR2280976A1 true FR2280976A1 (fr) 1976-02-27

Family

ID=23963371

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7523541A Withdrawn FR2280976A1 (fr) 1974-08-02 1975-07-28 Procede de fabrication d'un dispositif semi-conducteur

Country Status (7)

Country Link
JP (1) JPS5140757A (cs)
BE (1) BE832064A (cs)
DE (1) DE2533550A1 (cs)
FR (1) FR2280976A1 (cs)
IN (1) IN140598B (cs)
IT (1) IT1039690B (cs)
SE (1) SE7508447L (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008661A1 (fr) * 1978-09-08 1980-03-19 International Business Machines Corporation Procédé de traitement thermique préliminaire de corps semiconducteurs pour en accroitre ulterieurement l'effet de piegeage interne

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0008661A1 (fr) * 1978-09-08 1980-03-19 International Business Machines Corporation Procédé de traitement thermique préliminaire de corps semiconducteurs pour en accroitre ulterieurement l'effet de piegeage interne
FR2435818A1 (fr) * 1978-09-08 1980-04-04 Ibm France Procede pour accroitre l'effet de piegeage interne des corps semi-conducteurs

Also Published As

Publication number Publication date
BE832064A (fr) 1975-12-01
IT1039690B (it) 1979-12-10
JPS5140757A (en) 1976-04-05
DE2533550A1 (de) 1976-02-19
IN140598B (cs) 1976-12-04
SE7508447L (sv) 1976-02-03

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Legal Events

Date Code Title Description
ST Notification of lapse