FR2275882A1 - Cache de fabrication de circuits a semi-conducteur par photolithographie - Google Patents

Cache de fabrication de circuits a semi-conducteur par photolithographie

Info

Publication number
FR2275882A1
FR2275882A1 FR7519097A FR7519097A FR2275882A1 FR 2275882 A1 FR2275882 A1 FR 2275882A1 FR 7519097 A FR7519097 A FR 7519097A FR 7519097 A FR7519097 A FR 7519097A FR 2275882 A1 FR2275882 A1 FR 2275882A1
Authority
FR
France
Prior art keywords
photolithography
semiconductor circuits
manufacturing cover
manufacturing
cover
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7519097A
Other languages
English (en)
Other versions
FR2275882B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2275882A1 publication Critical patent/FR2275882A1/fr
Application granted granted Critical
Publication of FR2275882B1 publication Critical patent/FR2275882B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/48—Protective coatings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24851—Intermediate layer is discontinuous or differential

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • ing And Chemical Polishing (AREA)
FR7519097A 1974-06-19 1975-06-18 Cache de fabrication de circuits a semi-conducteur par photolithographie Granted FR2275882A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/480,618 US3949131A (en) 1974-06-19 1974-06-19 Photomasks with antistatic control

Publications (2)

Publication Number Publication Date
FR2275882A1 true FR2275882A1 (fr) 1976-01-16
FR2275882B1 FR2275882B1 (fr) 1978-05-19

Family

ID=23908662

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7519097A Granted FR2275882A1 (fr) 1974-06-19 1975-06-18 Cache de fabrication de circuits a semi-conducteur par photolithographie

Country Status (5)

Country Link
US (1) US3949131A (fr)
JP (1) JPS5113577A (fr)
DE (1) DE2527174A1 (fr)
FR (1) FR2275882A1 (fr)
IT (1) IT1036326B (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0107331A2 (fr) * 1982-09-27 1984-05-02 Western Electric Company, Incorporated Masque photographique
EP0323264A2 (fr) * 1987-12-29 1989-07-05 Canon Kabushiki Kaisha Procédé pour l'exposition aux rayons X utilisant une masque électriquement conductrice

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5352073A (en) * 1976-10-22 1978-05-12 Hoya Denshi Kk Photomask for ic
JPS53129637A (en) * 1977-04-19 1978-11-11 Nippon Telegr & Teleph Corp <Ntt> Mask for photoetching
US4178403A (en) * 1977-08-04 1979-12-11 Konishiroku Photo Industry Co., Ltd. Mask blank and mask
JPS6025024B2 (ja) * 1977-09-20 1985-06-15 三菱電機株式会社 フオトマスク用原板
JPS54120949U (fr) * 1978-02-14 1979-08-24
JPS5579447A (en) * 1978-12-09 1980-06-14 Dainippon Printing Co Ltd Photomask substrate and photomask
JPS55129347A (en) * 1979-03-28 1980-10-07 Chiyou Lsi Gijutsu Kenkyu Kumiai Photomask
JPS5619054A (en) * 1979-07-25 1981-02-23 Mitsubishi Electric Corp Metal photomask
JPS5626749U (fr) * 1979-08-07 1981-03-12
JPS5637511U (fr) * 1979-08-29 1981-04-09
US4323638A (en) * 1980-08-18 1982-04-06 Bell Telephone Laboratories, Incorporated Reducing charging effects in charged-particle-beam lithography
JPS6018870Y2 (ja) * 1980-08-18 1985-06-07 株式会社東芝 プラグインユニツト収納装置
JPS5741638A (en) * 1980-08-25 1982-03-08 Fujitsu Ltd Photomask for electron beam
JPS59181330A (ja) * 1983-03-31 1984-10-15 Nitto Electric Ind Co Ltd 露光処理方法
JPS6079736U (ja) * 1983-11-07 1985-06-03 凸版印刷株式会社 マスク
FR2567208B1 (fr) * 1984-07-05 1988-12-09 Cit Alcatel Pompe rotative a vide eleve
JPS6159449A (ja) * 1984-08-31 1986-03-26 Fujitsu Ltd 半導体製造用マスク
JPS6189854U (fr) * 1984-11-20 1986-06-11
JPS61209451A (ja) * 1985-12-20 1986-09-17 Konishiroku Photo Ind Co Ltd フオトマスク
JPS63188651U (fr) * 1987-05-25 1988-12-02
US4927692A (en) * 1988-11-25 1990-05-22 International Business Machines Corporation Antistatic mask for use with electronic test apparatus
JPH02248950A (ja) * 1989-03-22 1990-10-04 Matsushita Electron Corp フォトマスク
AUPO585797A0 (en) * 1997-03-25 1997-04-24 Memtec America Corporation Improved electrochemical cell
US6180291B1 (en) * 1999-01-22 2001-01-30 International Business Machines Corporation Static resistant reticle
US6376131B1 (en) 2000-04-04 2002-04-23 Xilinx, Inc. Methods and structures for protecting reticles from ESD failure
US6736386B1 (en) 2001-04-10 2004-05-18 Dupont Photomasks, Inc. Covered photomask holder and method of using the same
US6836292B2 (en) 2001-06-01 2004-12-28 Hewlett-Packard Development Company, L.P. Conductively coated and grounded optics to eliminate dielectric dust attraction
TW557368B (en) * 2001-06-29 2003-10-11 Jsr Corp Anti-reflection film laminated body and method of manufacturing the laminated body
JP2004061884A (ja) * 2002-07-29 2004-02-26 Umc Japan フォトマスク
CN103969944B (zh) * 2014-05-21 2016-03-09 深圳市华星光电技术有限公司 紫外掩膜及其制作方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2894858A (en) * 1950-12-01 1959-07-14 Pittsburgh Plate Glass Co Method of producing transparent electroconductive articles
US2887412A (en) * 1956-08-27 1959-05-19 Libbey Owens Ford Glass Co Electrically conducting glass unit and method of making same
US3210214A (en) * 1962-11-29 1965-10-05 Sylvania Electric Prod Electrical conductive patterns
US3443915A (en) * 1965-03-26 1969-05-13 Westinghouse Electric Corp High resolution patterns for optical masks and methods for their fabrication
US3681227A (en) * 1970-06-29 1972-08-01 Corning Glass Works Microcircuit mask and method
US3686028A (en) * 1970-09-24 1972-08-22 Westinghouse Electric Corp Masked photocathode
US3801418A (en) * 1972-03-16 1974-04-02 Atomic Energy Commission Transparent anti-static device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0107331A2 (fr) * 1982-09-27 1984-05-02 Western Electric Company, Incorporated Masque photographique
EP0107331A3 (en) * 1982-09-27 1985-07-03 Western Electric Company, Incorporated Photomask
EP0323264A2 (fr) * 1987-12-29 1989-07-05 Canon Kabushiki Kaisha Procédé pour l'exposition aux rayons X utilisant une masque électriquement conductrice
EP0323264A3 (fr) * 1987-12-29 1990-05-16 Canon Kabushiki Kaisha Procédé pour l'exposition aux rayons X utilisant une masque électriquement conductrice
US5048066A (en) * 1987-12-29 1991-09-10 Canon Kabushiki Kaisha X-ray exposure process for preventing electrostatic attraction or contact of X-ray masks

Also Published As

Publication number Publication date
DE2527174A1 (de) 1976-01-08
JPS5113577A (fr) 1976-02-03
FR2275882B1 (fr) 1978-05-19
US3949131A (en) 1976-04-06
IT1036326B (it) 1979-10-30

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Legal Events

Date Code Title Description
ST Notification of lapse